• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.338-339
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• 1992

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.14-19
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• 2000

Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

• Analytical Science and Technology
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• v.13 no.2
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• pp.151-157
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• 2000

Effects of acids and pre-reductants in the analysis of arsenic have been studied by hydride generation-atomic absorption spectrometry. The analytical results were strongly dependent on the acid concentrations. All the pre-reductants was very effective to observe the arsenic signal at strong acid concentrations (3 M-5 M). However, at the low acid condition (${\leq}0.1M$), L-cysteine only showed a reasonable effect on the absorption signal. When the sample was treated with the nitric acid, absorption signal was unstable and was also decreased. Although interference effects were observed from metal ions such as $Cr^{6+}$ and $Br^{5+}$ at low acid condition, the generation of hydride could be increased by the strong acid condition.

• Journal of Hydrogen and New Energy
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• v.13 no.2
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• pp.135-142
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• 2002

본 연구는 Chemical hydride 형태의 수소발생제를 포함한 액체연료를 이용한 신개념의 알칼라인 연료전지의 특성을 분석하였다. Chemical hydride는 연료전지의 수소공급원으로써 사용될 수 있으며, 본 연구팀은 KOH 전해질에 수소발생제인 Sodium Borohydride ($NaBH_4$)를 첨가하여 제조된 액체연료를 알칼라인 연료전지에 공급함으서 상온에서 매운 우수한 전기 화학적 성능결과를 얻을 수 있었다. 이때 음극 찰물질로 $ZrCr_{0.8}Ni_{1.2}$ 수소저장합금이 사용되었으며, 양극은 방수처리된 카본지 위에 분산된 Pt/C 가 사용되었고, air가 latm으로 양극에 공급되었다. 음극에 대한 XRD 분석결과 음극에서의 산화에 의해 Sodium Borohydride ($NaBH_4$)가 분해되어 수소가 발생되며, 연속적으로 액체연료가 주입되어도 전지가 작동하는 것을 확인할 수 있었다. 이때 에너지밀도는 6,000 Ah/kg (for $NaBH_4$ or $KBH_4$)이다.

• Journal of the Korean Chemical Society
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• v.41 no.8
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• pp.399-405
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• 1997

We examined the determination of trace amount of germanium in rocks and sediments by hydride vapor generation-ICP-AES. Germanium is formed volatile compounds with various types of acid reagents, but volatilizing of germanium was decreased in the presence of $H_3PO_4$. Sediments and rocks can be dissolved by mixed acids of $HF-HNO_3-H_3PO_4$ without volatilizing loss of germanium in open digestion system and it was possible to determine germanium by hydride generation-ICP-AES without further sample treatment. Detection limit of Ge is reached to 0.08 ppb under the condition of 5M $H_3PO_4$ and 1% $NaBH_4$ as a supporting acid and a reducing reagent, respectively. The measured values by hydride generation-ICP-AES agreed well with the reference values of SRMs as well as the values determined by solution nebulization-ICP-MS.

• Journal of Hydrogen and New Energy
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• v.24 no.1
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• pp.36-43
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• 2013

In this paper, a three-dimensional hydrogen desorption model is applied to a thin double-layered annulus ZrCo hydride bed and validated against the temperature evolution data measured by Kang et al. The present model reasonably captures the bed temperature evolution behavior and the 90% hydrogen discharging time. In addition, the performance of thin double-layered annulus bed is evaluated by comparing with a simple cylindrical bed using hydrogen desorption model. This study provides multi-dimensional contours such as temperature and H/M atomic ratio in the metal hydride region. This numerical study provides fundamental understanding during hydrogen desorption process and indicates that efficient design of the metal hydride bed is critical to achieve rapid hydrogen discharging performance. The present three-dimensional hydrogen desorption model is a useful tool for the optimization of bed design and operating conditions.

• Bulletin of the Korean Chemical Society
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• v.15 no.10
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• pp.881-888
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• 1994

The approximate rates and stoichiometry of the reaction of excess sodium tris(diethylamino)aluminum hydride (ST-DEA) with selected organic compounds containing representative functional groups under standardized conditions(tetrahydrofuran, $0{\circ}$) were studied in order to characterize the reducing characteristics of the reagent for selective reductions. The reducing ability of STDEA was also compared with those of the parent sodium aluminum hydride (SAH) and lithium tris(diethylamino)aluminum hydride (LTDEA). The reagent appears to be milder than LTDEA. Nevertheless, the reducing action of STDEA is very similar to that observed previously for LTDEA, as is the case of the corresponding parent sodium and lithium aluminum hydrides. STDEA shows a unique reducing characteristics. Thus, benzyl alcohol, phenol and 1-hexanol evolved hydrogen slowly, whereas 3-hexanol and 3-ethyl-3-pentanol, secondary and tertiary alcohols, were essentially inert to STDEA. Primary amine, such as n-hexylamine, evolved only 1 equivalent of hydrogen slowly. On the other hand, thiols examined were absolutely stable. STDEA reduced aidehydes and ketones rapidly to the corresponding alcohols. The stereoselectivity in the reduction of cyclic ketones by STDEA was similar to that by LTDEA. Quinones, such as p-benzoquinone and anthraquinone, were reduced to the corresponding 1,4-dihydroxycyclohexadienes without evolution of hydrogen. Carboxylic acids and anhydrides were reduced very slowly, whereas acid chlorides were reduced to the corresponding alcohols readily. Esters and epoxides were also reduced readily. Primary carboxamides consumed hydrides for reduction slowly with concurrent hydrogen evolution, but tertiary amides were readily reduced to the corresponding tertiary amines. The rate of reduction of aromatic nitriles was much faster than that of aliphatic nitriles. Nitrogen compounds examined were also reduced slowly. Finally, disulfide, sulfoxide, sulfone, and cyclohexyl tosylate were readily reduced without evolution of hydrogen. In addition to that, the reagent appears to be an excellent partial reducing agent: like LTDEA, STDEA converted ester and primary carboxamides to the corresponding aldehydes in good yields. Furthermore, the reagent reduced aromatic nitriles to the corresponding aldehydes chemoselectively in the presence of aliphatic nitriles. Consequently, STDEA can replace LTDEA effectively, with a higher selectivity, in most organic reductions.

• Bulletin of the Korean Chemical Society
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• v.14 no.4
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• pp.469-475
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• 1993

The approximate rates and stoichiometry of the reaction of excess lithium tris(diethylamino)aluminum hydride (LTDEA) with selected organic compounds containing representative functional groups under standardized condition (tetrahydrofuran, 0$^{\circ}C$) were examined in order to define the characteristics of the reagent for selective reductions. The reducing ability of LTDEA was also compared with those of the parent lithium aluminum hydride (LAH) and lithium tris(dibutylamino)aluminum hydride (LTDBA). In general, the reactivity toward organic functionalities is in order of LAH${\gg}$LTDEA${\geq}$LTDBA. LTDEA shows a unique reducing characteristics. Thus, benzyl alcohol and phenol evolve hydrogen slowly. The rate of hydrogen evolution of primary, secondary, and tertiary alcohols is distinctive: 1-hexanol evolves hydrogen completely in 6 h, whereas 3-hexanol evolves hydrogen very slowly. However, 3-ethyl-3-pentanol does not evolve any hydrogen under these reaction conditions. Primary amine, such as n-hexylamine, evolves only 1 equivalent of hydrogen. On the other hand, thiols examined are absolutely inert to this reagent. LTDEA reduces aldehydes, ketones, esters, acid chlorides, and epoxides readily to the corresponding alcohols. Quinones, such as p-benzoquinone and anthraquinone, are reduced to the corresponding diols without hydrogen evolution. However, carboxylic acids, anhydrides, nitriles, and primary amides are reduced slowly, where as tertiary amides are readily reduced. Finally, sulfides and sulfoxides are reduced to thiols and sulfides, respectively, without evolution of hydrogen. In addition to that, the reagent appears to be an excellent partial reducing agent to convert esters, primary carboxamides, and aromatic nitriles into the corresponding aldehydes. Free carboxylic acids are also converted into aldehydes through treatment of acyloxy-9-BBN with this reagent in excellent yields.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.238-248
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• 2019

In the high-temperature and high-pressure irradiation environments, the multi-field coupling processes of hydrogen diffusion, hydride precipitation and mechanical deformation in Zircaloy cladding tubes occur. To simulate this hydrogen-induced complex behavior, a multi-field coupling method is developed, with the irradiation hardening effects and hydride-precipitation-induced expansion and hardening effects involved in the mechanical constitutive relation. The out-pile tests for a cracked cladding tube after irradiation are simulated, and the numerical results of the multi-fields at different temperatures are obtained and analyzed. The results indicate that: (1) the hydrostatic stress gradient is the fundamental factor to activate the hydrogen-induced multi-field coupling behavior excluding the temperature gradient; (2) in the local crack-tip region, hydrides will precipitate faster at the considered higher temperatures, which can be fundamentally attributed to the sensitivity of TSSP and hydrogen diffusion coefficient to temperature. The mechanism is partly explained for the enlarged velocity values of delayed hydride cracking (DHC) at high temperatures before crack arrest. This work lays a foundation for the future research on DHC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.139-142
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• 2024

Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.