• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.76-80
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• 2005

In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $\mu$m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $\lambda$$_{g}$/4 or 3$\lambda$$_{g}$/4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.418-418
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• 2012

We fabricated a new type of hybrid film using molecular layer deposition (MLD). The MLD is a gas phase process analogous to atomic layer deposition (ALD) and also relies on a saturated surface reaction sequentially which results in the formation of a monolayer in each sequence. In the MLD process, polydiacetylene (PDA) layers were grown by repeated sequential surface reactions of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet (UV) polymerization under a substrate temperature of $100^{\circ}C$. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the hybrid films. Polymerization of the hybrid films was confirmed by infrared (IR) spectroscopy and UV-Vis spectroscopy. Composition of the films was confirmed by IR spectroscopy and X-ray photoelectron (XP) spectroscopy. The titanium oxide cross-linked polydiacetylene (TiOPDA) hybrid films exhibited good thermal and mechanical stabilities.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제1권1호
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• Current Photovoltaic Research
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• 제3권4호
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Journal of Information Display
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• 제6권2호
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• pp.16-18
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) are fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layer on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility is increased to more than 35 times than that of the TFT which has only a gate insulator of $SiO_2$ at the same electric field. The carrier mobility of $1.80cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}/I_{off}$ current ratio> $1.10{\times}10^5$ are obtained less than -30 V bias condition. The result is one of the best reported performances of pentacene TFTs with hybrid insulator including cross-linked PVA layer as a gate insulator at relatively low voltage operation.

• 한국콘텐츠학회논문지
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• 제19권1호
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• pp.117-124
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• 2019

이 논문은 디지털 테크놀러지가 영화 이미지의 미학적 존재론을 어떻게 변화시키고 있는지에 대해 다룬다. 영화 예술의 물질적 기초로서 셀룰로이드 필름을 통한 이미지 생산과 소비의 시대는 이미 막을 내렸다. 컴퓨터와 인터넷 시대의 도래는 영화의 세계에 새로운 이미지 존재론의 출현을 불가피하게 만든다. 오늘날 디지털 시네마 시대에 벤야민의 기계 복제 개념을 재해석할 필요가 있다. 필름 이미지의 기계 복제는 컴퓨터 시뮬레이션에 기초한 디지털 합성 개념으로 변형된다. 또한, 디지털 테크놀러지는 영화의 몽타주 미학에 중대한 변화를 초래한다. 쇼트들의 시간적 연결에 기초한 필름의 몽타주 미학은 컴퓨터 데이터와 픽셀 이미지의 공간적 시뮬레이션에 기초한 '디지털 꼴라주' 미학으로 변화한다. 이 논문은 영화적 환영과 표현의 미학이 확장되는 디지털 하이브리드 이미지 존재론을 탐구함으로써 기존 연구와의 차별성을 제시한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1115-1118
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• 2006

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 추계학술발표대회 논문집
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• pp.57-60
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• 2005

Composite-to-aluminum joins were tested to get failure loads and modes for three types of joins; adhesive bonding, bolt fastening, and adhesive-bolt hybrid joining. Film type adhesive FM73 and paste type adhesive Cytec EA9394S were used for aluminum and composite bonding to make a double-lap joint. A digital microscope camcorder was used to monitor the failure initiation and propagation. It was found that the hybrid joining is an effective method to strengthen the joint when the mechanical fastening is stronger than the bonding as in the case of using the paste type adhesive. On the contrary, when the strength of the bolted joint is lower than the strength of the bonded joint as in the joint with the film type adhesive, the bolt joining contribute little to the hybrid joint strength.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.