• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.50.1-50.1
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.59-59
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• 2000

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.25.1-25.1
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 대한전자공학회논문지SD
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• 제37권8호
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• pp.17-27
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• 2000

열선 CVD(Hot Wire CVD)를 이용해 유리기판에 미세결정 실리콘(${\mu}c$ -Si:H) 박막을 증착시키고, 증착 조건에 따른 막의 특성변화를 관찰하였다. 열선 CVD법에 의한 ${\mu}c$ -Si:H막의 증착률은 조건변화에 따라 0.2nm/sec에서 3.5nm/sec사이의 값을 가졌으며, 기존의 PECVD법에 비해 10배 이상 높은 값이었다. Raman 특성으로부터 ${\mu}c$ -Si:H막은 비정질과 결정질의 두상이 혼합된 상태임을 알 수 있었으며, 평균 결정 립의 크기는 6-10nm, 결정체적분율은 37~63%범위였다. 막의 전도대와 Fermi 준위의 차를 나타내는 전도 활성화에너지(conductivity activation energy)는 30mTorr에서 0.22eV로 나타났으며, 압력에 따라 증가하여 300mTorr에서는 0.68eV의 값을 가졌다. 막의 활성화 에너지 증가는 높은 압력에서 증착된 막의 특성이 진성(intrisic)에 가까움을 의미하며, 이는 압력증가에 따른 암 전도도의 감소특성으로부터 확인할 수 있었다. 또한 이차이온질량분석으로부터 열선온도 1800$^{\circ}C$에서 증착시킨 막의 텅스텐 함유량은 $6{\times}10^{16}atoms/cm^3$임을 알 수 있었다.

• 월간포장계
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• 통권334호
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• pp.86-89
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• 2021