• Journal of Convergence for Information Technology
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• v.9 no.1
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• pp.92-98
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• 2019

Due to the development of hologram display technology, various studies are being conducted to provide realistic contents for augmented reality. In the case of the HMD for hologram, since augmented reality objects must be rendered by a small processor, it is necessary to use a low-capacity content. To solve this problem, there is a need for a technique of rendering resources by providing resources through a network. In the case of the existing augmented reality system, there is no problem of contents modulation because the resources are loaded and rendered in the internal storage space. However, when providing resources through the network, security problems such as content tampering and malicious code insertion should be considered. Therefore, in this paper, we propose a network rendering technique applying security techniques to provide augmented reality contents in a holographic HMD device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.193-204
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• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.