• 천문학논총
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• 제6권1호
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• pp.38-49
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• 1991

Energy density evolution of primordial black holes(PBHs) due to quantum gravitational tunneling effect in the very early Universe is calculated for the four cases of GUTs(grand unified theories) (SM, SUSY SM, SUSY SU(5), SU(5)). For the three of them (SM, SUSY SM, SUSY SU(5)), it is confirmed that there are a considerable amount of PBHs and so it may give a firm support to Lindley's paper(1981) in which he tried to solve the baryon asymmetry problem. It is shown that the formation of PBHs increases the cosmic scale factor R and decreases the total energy density $\rho_t$ faster than in the usual radiation dominated era.

• 한국응용과학기술학회지
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• 제17권2호
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• pp.120-125
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• 2000

The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

• 천문학회보
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• 제39권2호
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• pp.66.1-66.1
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• 2014

We study the environment of the most massive galaxies and the most massive black holes. We use SDSS DR7 data, the catalog from Simard et al. (2011), Mendel et al. (2014), and KIAS value-added galaxy catalog (Choi et al. 2011). Currently, we investigate the number density as an environment around each galaxy. Number densities are measured by $5^{th}$ and $10^{th}$ nearest photometric galaxies within 7000km/s from the spectroscopic galaxies. The most massive galaxies (M > $10^{12}M_{\odot}$) or black holes ($M{\sim}10^{10}M_{\odot}$) tend to reside in very dense regions in comparison with less massive ones. We also present the research plan and future work.

• 한국레이저가공학회지
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• 제13권4호
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• pp.7-13
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• 2010

Today, the most common process for generating Through Silicon Vias (TSVs) for 3D ICs is Deep Reactive Ion Etching (DRIE), which allows for high aspect ratio blind holes with low surface roughness. However, the DRIE process requires a vacuum environment and the use of expensive masks. The advantage of using lasers for TSV drilling is the higher flexibility they allow during manufacturing, because neither vacuum nor lithography or masks arc required and because lasers can be applied even to metal and to dielectric layers other than silicon. However, conventional nanosecond lasers have the disadvantage of causing heat affection around the target area. By contrast, the use of a picosecond laser enables the precise generation of TSVs with less heat affected zone. In this study, we conducted a comparison of thermalization effects around laser-drilled holes when using a picosecond laser set for a high pulse energy range and a low pulse energy range. Notably, the low pulse energy picosecond laser process reduced the experimentally recast layer, surface debris and melts around the hole better than the high pulse energy process.

• Journal of the Korean Wood Science and Technology
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• 제42권6호
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• pp.714-722
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• 2014

선행연구에서 다양한 목질 보드류를 열분해하여 다공질 탄화보드 제조에 성공하였고, 높은 난연성, 전자파차폐성, 원적외선방사, 폼알데하이드 흡착성, 흡음성능을 확인하였다. 본 연구에서는 경제성과 흡음성이 뛰어난 탄화 중밀도 섬유판(MDF)을 선택하여 보다 높은 흡음성능을 부여하기 위해 다른 흡음재료에도 사용 중인 샌딩처리와 타공기법을 시도하였다. 또한 개선된 흡음성능을 바탕으로 실제 음향판을 제작하여 그 음향적 효과를 파악하였다. 탄화 MDF를 십자모양(타공 5개), 직사각형모양(타공 9개), 일자모양(타공 5개)으로 타공 처리한 후, 흡음률을 측정한 결과, 무처리 탄화 MDF의 흡음률은 14% 정도를 나타내었고, 직사각형모양 타공 시편이 16.01%로 흡음률이 가장 높았고 십자모양 타공 시편이 15.68%, 일자 타공 시편은 14.25%의 흡음률을 나타내어 그 효과가 미미하였다. 반면에, 탄화 MDF의 표면을 각 1, 2, 3 mm로 표면샌딩 처리후 흡음률을 측정한 결과, 무처리 시편(13%)에 비해 65% 증가한 21.7% (1 mm 샌딩), 21.83% (2 mm 샌딩), 19.37% (3 mm 샌딩)를 확인하였다. 이 결과를 바탕으로 실대형 탄화보드 복합 음향판을 제작하였으며 잔향실법으로 흡음시험한 결과 감음계수 0.45로 높은 흡음성능을 발휘하여 상업화도 가능할 것으로 판단된다.

• Journal of Acupuncture Research
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• 제21권4호
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• pp.31-51
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• 2004

Objective: The propose of this study is to investigate the characteristics of combustion in indirect moxibustion with garlic. Methods: We observed the characteristics of combustion by the variations of the thickness(3mm, 4mm, 5mm) of a slice for indirect moxibustion with garlic and mass(80mg, 100mg, 120mg) of moxa cone and existence of holes. The temperature of indirect moxibustion for garlic insulation with holes was higher than temperature of indirect moxibustion for garlic insulation without holes. Combustions time in the preheating period is about 1 minute, it varies by the existence of holes, the thickness of a slice for indirect moxibustion with garlic, and the density of moxa cone. Results: Maximum temperature of heating period was $38.7{\sim}46.2^{\circ}C$, combustion time in the heating period was 118~164sec and maximum ascending temperature gradient was $0.102{\sim}0.264^{\circ}C/sec$. Retaining period was shorter than heating period and stimulus of heating retains more, because it is higher than body temperature. By this report, indirect moxibustion with garlic is more effective with holes and the appropriate thickness of a slice for indirect moxibustion with garlic is 3.5~4mm. It is appropriate that the diameter of moxa cone is 8mm and height of that is 10mm. With this condition, effective combustion period is 120sec, maximum temperature is $42{\sim}44^{\circ}C$, maximum ascending temperature gradient is $0.14{\sim}0.16^{\circ}C/sec$. It is necessary to study clinical correlations for more accurate quantitative standard.

• 새물리
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• 제68권12호
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• pp.1288-1292
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• 2018

반도체 특성을 가지는 이차원 전이금속 칼코겐 화합물 $MoS_2$와 강자성이면서 금속성을 가지는 $VS_2$로 이루어진 수평접합 구조를 기반으로 해서, 0%부터 10%까지 2% 간격으로 변형에 따른 쇼트키 장벽(Schottky Barrier) 변화를 밀도 범함수 이론 계산을 통해 연구하였다. 그 결과, 홀의 쇼트키 장벽이 전자의 쇼트키 장벽에 비해 훨씬 작고, 홀의 쇼트키 장벽 높이가 변형에 따라 선형적으로 감소함을 발견하였다. 특히, 8% 이후의 변형에서 홀의 스핀 업 쇼트키 장벽의 높이가 0에 가까워지는 임계 변형값이 존재함을 발견하였고, 이 임계 변형값 이상에서는 스핀 업 성분의 홀이 $MoS_2/VS_2$ 수평접합구조를 통해 쇼트키 장벽 없이 쉽게 흐르게 됨을 알게 되었다. 이러한 연구 결과는 향후, 변형을 통한 이차원 전이금속 칼코겐 수평 접합구조 기반 소자 특성 최적화에 중요한 기초자료로 이용될 것으로 기대한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• 대한전기학회논문지
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• 제44권4호
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• 화약ㆍ발파
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• 제24권2호
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• pp.1-8
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• 2006

본 연구는 규석광의 터널 굴착시 굴진장 향상과 사압현상 및 소결현상을 예방하기 위해 모든 장약공의 장약밀도를 다르게 적용하였다. 이 때 심발공은 동일 장약공내에 2개의 뇌관을 이용한 정기폭과 역기폭의 복합기폭방식을 도입하였다. 자유면 형성이 어려운 공저부분은 높은 장약밀도로 장전하고, 주상부분은 공저보다 낮은 장약밀도로 장전함으로써 폭약의 위력이 효과적으로 암반에 대응할 수 있는 공법인 복합장약기폭시스템을 개발하였다. 그 결과 경암이나 장공발파에서 흔히 발생되는 사압현상 및 소결현상 등을 방지할 수 있었다. 또한 1회 천공장 대비 굴진장을 95% 이상 증대시킴으로써 약 15% 정도의 시공능율이 향상되고 비장약량이 20% 정도 감소되었다.