• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.8 s.179
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• pp.2059-2064
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• 2000

The measurement of residual stresses by the hole-drilling method has been commonly used to evaluate residual stresses in structural members. In this method, one of the source of error is due to the misalignment between the drilling hole and strain gage center. This paper presents a finite element analysis of the influence of such misalignment for the uniaxial residual stress field. The stress error increases proportionally to hole eccentricity. The correction equations which easily obtain the residual stress taking account of the hole eccentricity are derived. The stress error due to the hole eccentricity decreases by approximately one percent using this equations.

• Journal of Information Display
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• v.4 no.1
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• pp.29-33
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• 2003

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine (CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) in a device structure of $ITO/bufferr/TPD/Alq_3/Al$. Polymer PVK and PEDOT:PSS buffer layer were produced using the spin casting method where as the CuPc layer was produced using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature at various a thickness of the buffer layer. We observed an improvement in the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer were used, respectively. The enhancement of the efficiency is assumed to be attributed to the improved balance of holes and elelctrons resulting from the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer function as a hole-injection supporter and the PVK layer as a hole-blocking one.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.3
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• pp.225-239
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• 1985

The beams with a circular hole are often used for constructing structures. The center of the circular hole is normally located in neutral axis and the stress state around the hole due to bending moment is trivial. But the stress level around the hole due to shear force is expected to be significant especially in the case of beams made of shape steels. In this paper, the stress distributions around the circular hole of beams were presented. Using polar coordinates and generallized stress function, the formulas of stress components were derived. The aspects of plastic area propagations based on von Mises yield criteria were also shown graphically. In order to verify the formulas presented in this paper, a beam of I-shape steel with a circular hole was made and the strains around the hole were measured under various loading conditions. The experimental results were proved to coincide fairly well with the calculated values.

• Journal of Welding and Joining
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• v.8 no.4
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• pp.76-82
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• 1990

Lots of research works have been done to improve the accuracy of the hole drilling method to measure residual stress by many investigators. In this study, first, size effect of specimen was analyzed based on the solution of hole in a strip under tension. If the ratio of hole diameter tothe strip width is less than 0.2, the stress distribution around hold may be given from the solution of hole in an infinite plate. Second, the residual stress above $0.6{\sigma}_y$(yield stress) may be measured less than the actual stress by 10-15 percent. Third, eccentricity of hole relative to the rosette center effects on the accuracy of residual stress measurements by 10 percent. The error due to eccentricity of hole can be corrected by the iteration method or the direct method.

• Current Photovoltaic Research
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• v.8 no.2
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.244-248
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• 2015

We proposed and demonstrated the double layered metallic nano-hole structure using polystyrene beads process to enhance the sensitivity of surface plasmon resonance (SPR). The double layered SPR structures are calculated using the finite-difference time-domain (FDTD) method for the width, thickness, and period of the metallic nano-hole structures. The thickness of the metal film and the metallic nano-hole is 30 and 20 nm in the 214 nm wide nano-hole size, respectively. The double layered SPR structures are fabricated with monolayer polystyrene beads of 420 nm wide. The sensitivities of the conventional SPR sensor and the double layered SPR sensor are obtained to 42.2 and 52.1 degree/RIU, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1813-1818
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• 2006

We demonstrate a new approach to form gradient hole injection layer (HIL) in organic light-emitting diodes (OLEDs). Single spincoating of hole-injecting conducting polymer compositions with a perfluorinated ionomer results in gradient workfunction through the layer by self-organization, which lead to remarkably efficient single layer polymer light-emitting diodes (PLEDs) (${\sim}21$ cd/A). The device lifetime was significantly improved (${\sim50$ times) compared with the conventional hole injection layer, poly(3,4-ethylenedioxy-thiophene)/polystyrene sulfonate. This solution processed HIL also produced dramatically enhanced luminous efficiency (${\sim}34$ cd/A) in vacuum- deposited green fluorescent OLEDs while the vacuum deposited HIL gave the luminous efficiency of ${\sim}23$ cd/A in the same device structure.

• 제어로봇시스템학회:학술대회논문집
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• 1989.10a
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• pp.731-736
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• 1989

RCC(Remote Center Compliance)[1][2] is a useful device for peg and hole insertion works. Two methods for smooth insertion of round peg and round hole are proposed. The idea of method 1 is to design the optimum position of the compliance center of RCC which is different from that of usual RCC in order to minimize the insertion force with the assumption of the known insertion angle. The idea of method 2 is to insert peg with rotation in order to decrease the friction coefficient between peg and hole. The two ideas are analyzed theoretically and are shown valid experimentally.

• Coupled systems mechanics
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• v.6 no.1
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• pp.75-96
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• 2017

As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.