• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.279-285
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• 2007

We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.

• Particle and aerosol research
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• v.6 no.2
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.8 no.2
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• pp.254-263
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• 1998

A worker employed in a serpentine mine was found developed mesothelioma as the first case of Korea in 1997. Asbestos was known as a causative agent for mesothelioma. Thus, asbestos contamination in mines could be a big health threat to those workers who were unknowingly exposed. However, there was no report that any minerals found in Korea contained asbestos. This study was carried out to find the presence of any asbestiform fibers in minerals which could be obtained in Korean mines. We examined fifteen minerals from 44 mines which were suspected contaminated with asbestiform fibers. Asbestiform analysis was done with high resolution transmission electron microscope(TEM), with energy dispersive X-ray spectroscope(EDX) and X-ray diffraction(XRD) analyses. Among asbestiform fibers, chrysotile was found in chrysotile, serpentine, talc and pyrophylite specimens from 11 mines. Tremolite was found in tremolite and talc specimens from three mines. Mordenite was found in zeolite specimens from two mines. Wallastonite and sepiolite were found in wallastonite and sepiolite specimens respectively. Crocidolite, antigorite and actinolite were found from talc specimens. But no asbestiform fiber contaminants were found in doromite, vermiculite, limestone, marble, gypsum, kaolin, and clary specimens. Thus, these asbestiform fibers such as such as chrysotile, tremolite, mordenite, crocidolite, antigorite and actinolite could be the responsible agents for the health hazards such as mesothelioma and other cancers.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.25-29
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• 2001

This study examined the effects of carbon surface modification by the epoxy resin coating on the electrochemical performance. The mesocarbon microbeads(MCMB) carbon was surface-modified by coating the epoxy resin and its electrochemical properties as an anode was examined. The surface coating of MCMB was carried out by refluxing the MCMB powders in a dilute H2SO4 solution, and mixing them with the epoxy resin-dissolved tetrahydrofuran(THF) solution. Under heat-treatment of the coated MCMB at the temperature over $1000^{\circ}C$, the epoxy-resin coating layer was converted into amorphous phase which was identified by a high resolution transmission electron microscope (HRTEM). The epoxy resin coated MCMB has higher Brunauer-Emmett-Teller (BET) surface area, higher charge/ discharge capacity and better cycleability than a raw MCMB without coating. The reason for the enhancement of cell performance by the epoxy resin coating were considered as the epoxy resin coating layer plays an important role to be a barrier for carbon reacting with electrolyte and to retard the formation of passivation layer.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.19-24
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• 2010

Alloying degree is an important structural factor of PtRu catalysts for direct methanol fuel cells (DMFC). In this work, carbon supported PtRu catalysts were synthesized by reduction method using anhydrous ethanol as a solvent and $NaBH_4$ as a reducing agent. Using anhydrous ethanol as a solvent resulted in high alloying degree and good dispersion. The morphological structure and crystallanity of synthesized catalysts were characterized by X-ray diffraction (XRD), high resolution transmission electron microscope (HR-TEM). CO stripping and methanol oxidation reaction were measured. Due to high alloying degree catalyst prepared in anhydrous ethanol, exhibited low onset potential for methanol oxidation and negative peak shift of CO oxidation than commercial sample. Consequently, samples, applying ethanol as a solvent, exhibited not only enhanced CO oxidation, but also increased methanol oxidation reaction (MOR) activity compared with commercial PtRu/C (40 wt%, E-tek) and 40 wt% PtRu/C prepared in water solution.

• Journal of Biomedical Engineering Research
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• v.28 no.2
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• pp.306-309
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• 2007

PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).