• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.111-111
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• 2003

반도체 나노결정은 양자구속효과(quantum confinement effect)에 의한 광학적인 특성을 갖기 때문에 광전자공학(optoelectronic), 광전지(photovoltaic)분야에 응용하려는 연구가 활발히 진행되고 있다. 본 연구에서는 고순도의 CdTe 나노결정을 1-thioglycerol 표면 완화제(surface stabilizer)로 사용하여 수용액 상태로 합성하였다. 모든 실험은 $N_2$ 분위기의 삼각플라스크에서 실험하였다. Cadmium 소오스로는 Cd(CIO$_4$)$_2$.6$H_2O$(Cadmium perchlorate hydrate-Aldrich)를 사용하였고 Tellurium 소오스로는 A1$_2$Te$_3$(Aluminum telluride-CERAC)와 H$_2$SO$_4$가 반응하여 H$_2$Te gas가 주입되도록 하였다. 합성된 CdTe 나노결정은 core-shell 형태로 존재하며 결정크기에 따른 특성분석을 위해서 High Resolution Transmission Electron Microscope (HRTEM), Photoluminescence spectroscopy, X-ray diffraction(XRD), UV-vis absorption spectra 분석을 하였다 또한 CdTe 나노결정을 나노와이어로 제작하여 CdTe 나노결정을 이용한 태양전지 제작에 응용하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.28-28
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• 2018

수전해(electrochemical water splitting)는 연료전지의 가역적 역반응을 이용하여 물로부터 수소와 산소를 발생시키는 기술이다. 산소는 음극에서 발생하는데, 이 때 음극 표면은 고농도의 산소 음이온 및 라디칼에 장시간 노출된다. 때문에 기계적, 화학적 내구성이 우수한 전극재를 사용할 필요가 있다. 불용성 전극 (dimensionally stable anode, DSA)은 이러한 기술적 요구사항을 잘 만족하는 상용화 된 전극이다. 티타늄이나 티타늄 합금 표면에 촉매를 미량 반복 살포하여 산화물 형태의 매우 견고한 표면을 형성함으로서 내구성을 확보한다. 그러나, 보통 DSA 제조 기법의 특징에 따라 다공성 표면 구조를 사용하지는 않기 때문에 생산 과정이 복잡하고 비용이 많이 발생하는 문제를 여전히 나타내고 있다. 본 연구는 상기 문제를 개선하기 위한 수전해용 음극 제조 기술에 관한 연구이다. 티타늄과 티타늄 합금은 동일한 양극산화 기술 적용이 가능하다는 점을 이용하여 티타늄 기판으로부터 다공성 구조를 형성함으로써 바인더의 사용을 배제하였다. 단일공정양극산화기법 (single-step anodization)을 이용하여 $IrO_2$와 $RuO_2$를 도핑함으로써 TiO2에 촉매능을 부여하였다. 제조된 나노튜브들의 구조적 특징을 HR-TEM (High-resolution transmission electron microscope)과 FE-SEM (Field-emission scanning electron microscope)으로 분석하고 SAED (selective area electron diffraction) 패턴을 분석하여 전극재의 결정성을 확인하였다. 알칼라인 분위기에서 일으킨 산소발생반응 (oxygen evolution reaction, OER)의 LSV (linear sweep voltammetry) 결과를 XPS (X-ray photoelectron microscoscopy) 결과와 연관지어 촉매 표면 구조와 과전압의 관계를 해석하였다. LSV 결과로부터 Tafel 분석을 연달아 수행함으로써 전극의 속도결정단계를 정의하였다. 최종적으로 사이클 테스트 통하여 DSA로써의 성능을 평가하였다.

• Applied Microscopy
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• v.25 no.2
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2331-2334
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• 2014

$Cu_2SnSe_3$ (CTSe) and $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles were synthesized by sonochemical reactions under multibubble sonoluminescence (MBSL) conditions. First, $Cu_2SnSe_3$ nanoparticles were synthesized by the sonochemical method with an 85% yield, using CuCl, $SnCl_2$, and Se. Second, ZnSe was coated on the CTSe nanoparticles by the same method. Then, they were transformed into CZTSe nanoparticles of 5-7 nm diameters by heating them at $500^{\circ}C$ for 1 h. The ratios between Zn and Sn could be controlled from 1 to 3.75 by adjusting the relative concentrations of CTSe and ZnSe. With relatively lower Zn:Sn ratios (0.75-1.26), there are mostly CZTSe nanoparticles but they are believed to include very small amount of CTS and ZnSe particles. The prepared nanoparticles show different band gaps from 1.36 to 1.47 eV depending on the Zn/Sn ratios. In this sonochemical method without using any toxic or high temperature solvents, the specific stoichiometric element Zn/Sn ratios in CZTSe were controllable on demand and their experimental results were always reproducible in separate syntheses. The CZTSe nanoparticles were investigated by using X-ray diffractometer, a UV-Vis spectrophotometer, scanning electron microscope, Raman spectroscopy, and a high resolution-transmission electron microscope.

• Applied Microscopy
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• v.40 no.1
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• pp.21-28
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• 2010

In a simulation study of atomic resolution transmission electron microscope images of single layer and bilayer graphene, it is demonstrated that the conventional Bloch wave formulations can be used when high-order Laue zone reflections are properly taken into account in the theory. The simulated images for bilayer graphene show 3-fold rotational lattice symmetry rather than the 6-fold one under certain conditions. This result can be understood as revealed the 3-fold rotational lattice symmetry of bilayer graphene in three dimensions along [0001]. For single layer graphene the observed phase images showing 3-fold rotational lattice symmetry were particularly noted. This phenomenon has been explained by an assumption of the re-configuration of electron density on the surface of graphene. And the matching images have been obtained as simulated with up to the second order Laue zone reflections only, reflecting the re-configuration of electrons on the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.54-55
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• 2010

Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.965-971
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• 2001

$\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere and an oxygen atmosphere, respectively. The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts synthesized in the nitrogen atmosphere are with the range of 20~1000nm width and 10 ~100nm thickness, and that nanomaterials are nanoparticles with 20~50nm radius obtained by thermal annealing in an oxygen atmosphere. The crystal structure of the $\beta$-Ga$_2$O$_3$ nanobelts and nanoparticles was in this study investigated by X-ray diffractometer (XRD) and high-resolution transmission electron microscope (HRTEM). The formation processes of the nanobelts and nanoparticles will be discussed in this paper.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2909-2912
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• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.8-13
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• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.