• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.327-330
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• 2010

$LiCoO_2$, a cathode material for lithium rechargeable batteries, was prepared in a nanoscale through a simple sonochemistry. First, $Co_3O_4$ nanoparticles were prepared by reacting NaOH and $CoCl_2$ or $CoSO_4$ with a sonochemical method, operated at 20 kHz and 220 W for 20 min, very powerful multibubble sonoluminescence conditions for chemical reactions. Second, LiOH was coated onto the $Co_3O_4$ nanoparticles by the same method as above. Finally, $LiCoO_2$ nanoparticles of about 10~30 nm size in diameter were obtained by the thermal treatment of the resulting LiOH-coated $Co_3O_4$ nanoparticles at $500^{\circ}C$ for 3 hr. This synthetic process is relatively quite mild and simple compared to the known method for the synthesis of $LiCoO_2$ nanoparticles. The materials synthesized were characterized by infrared spectroscopy, X-ray diffraction, inductively coupled plasma spectrometer, and high resolution-transmission electron microscopy analyses.

• Particle and aerosol research
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• v.6 no.2
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.2021-2026
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• 2011

AgNPs (silver nanoparticles) has been widely used for the commercial products, which have antimicrobial agent, medical devices, food industry and cosmetics. Despite, AgNPs have been reported as toxic to the mammalian cell, lung, liver, brain and other organs and many researchers have investigated the toxicity of AgNPs. In this study, we investigated toxicity of the AgNPs to the liver cell using metabolomics based on HRMAS NMR (High Resolution Magic Angle Spinning Nuclear Magnetic Resonance) technics, which could apply to the intact tissues or cells, to avoid the sample destruction. Target profiling and multivariative statistical analysis were performed to analyze the 1D $^1H$ spectrum. The results show that the concentrations of many metabolites were affected by the AgNPs in the liver cell. The concentrations of glutathione (GSH), lactate, taurine, and glycine were decreased and most of amino acids, choline analogues, and pyruvate were increased by the AgNPs. Moreover, the levels of the metabolites were recovered upto similar level of metabolites in the normal cell by the pre-treatment of NAC, external antioxidant. The results suggest that the depletion of the GSH by the AgNPs might induce the conversion of lactate and taurine to the pyruvate.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.239-239
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• 2006

In the present study, we synthesized CBDA-FDA and its analogue, poly(4,4' -(9,9-fluorenyl)diphenylene pyromellitimide) (PMDA-FDA), and then investigated quantitatively the orientational distributions of the polymer chain segments in the surfaces of their films by using linearly polarized Fourier transform infrared (FTIR) spectroscopy and optical retardation analysis. We also examined the films' surface topographies using high spatial resolution atomic force microscopy (AFM). Further, rubbed films were used to assemble antiparallel and $90^{\circ}-twisted$ nematic (TN) LC cells, and the alignment behaviors, pretilt angles and anchoring energies of the LC molecules in the cells were determined. The films were found to have very interesting surface morphologies and LC alignment behaviors, which have not previously been reported. The observed LC alignments, pretilt angles and anchoring energies are discussed by taking into account the interactions of the LC molecules with the oriented polymer chain segments and the surface morphologies.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.580-580
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• 2012

Heterostructures has unique and important properties, which may be helpful for finding many potential applications in the field of electronic, thermoelectric, and optoelectronic devices. We synthesized CdTe/Te core-shell heterostructures by vapor-solid process at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under various deposition conditions. These tellurium nanostructures were then used as substrates in the second step to synthesize the CdTe/Te core-shell heterostructures. Using this method, various sizes, shapes and types of CdTe/Te core-shell structures were fabricated under a range of conditions. These structures were analysed by scanning electron microscopy, high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. The vapor phase process at low temperatures appears to be an efficient method for producing a variety of Cd/Te hetero-nanostructures. In addition, the hetero-nanostructures can be tailored to the needs of specific applications by deliberately controlling the synthetic parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.153-153
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• 2011

유리나 폴리머를 기판으로 하는 TFT(Thin film transistor), solar cell에서는 낮은 공정 온도에서($200{\sim}500^{\circ}C$) amorphous semiconductor thin film을 poly-crystal semiconductor thin film으로 결정화 시키는 기술이 매우 중요하게 대두 되고 있다. Ge은 Si에 비해 높은 carrier mobility와 낮은 녹는점을 가지므로, 비 저항이 낮을 뿐만 아니라 더 낮은 온도에서 결정화 할 수 있다. 하지만 일반적으로 쓰이는 Ge의 결정화 방법은 비교적 높은 열처리 온도를 필요로 하거나, 결정화된 원소에 남아있는 metal이 불순물 역할을 한다는 문제점, 그리고 불균일한 결정크기를 만든다는 단점이 있었다. 그 중에서도 현재 가장 많이 쓰이고 있는 MIC, MILC는 metal과 a-Ge이 접촉되는 interface나, grain boundary diffusion에 의해 핵 생성이 일어나고, 결정이 성장하는 메커니즘을 가지고 있으므로 단순 증착과 열처리 만으로는 앞서 말한 단점을 극복하는데 한계를 가지고 있다. 이에 PIII&D 장비를 이용하면, 이온 주입된 원소들이 모재와 반응 할 수 있는 표면적이 커짐으로 핵 생성을 조절 할 수 있을 뿐만 아니라, 이온 주입 시 발생하는 self annealing effect로 결정 크기까지도 조절할 수 있다. 또한 이러한 모든 process가 한 진공 장비 내에서 이루어지므로 장비의 단순화와, 공정간 단계별로 발생하는 불순물과 표면산화를 막을 수 있으므로 절연체 위에 저항이 낮고, hall mobility가 높은 poly-crystalline Ge thin film을 만들 수 있다. 본 연구에서는, 주로 핵 생성과정에서 seed를 만드는 이온주입 조건과, 결정 성장이 일어나는 증착 조건에 따라서 Ge의 결정방향과 크기가 많은 차이를 보이는데, 이는 HR-XRD(High resolution X-ray Diffractometer)와 Raman spectroscopy를 이용하여 측정 하였으며, SEM과 AFM으로 결정의 크기와 표면 거칠기를 측정하였다. 또한 Hall effect measurement를 통해 poly-crystalline thin film 의 저항과 hall mobility를 측정하였다.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.92-97
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• 2006

A study of the adsorption site of CO in the Ni(111)$(2\times2)$-O/CO coadsorbed phase over different sample preparation temperatures revealed that the atop site is favoured. The Ni-C spacing is given by $1.77\pm0.01\;{\AA}$. A study of the adsorption site of Co in the Ni(111)$(2\times2)$-O/CO coadsorbed phase over different sample preparation temperatures revealed that the atop site is favoured. The Ni-C spacing is given by $1.77\pm0.01\;{\AA}$. The data from the sample prepared at 265 K showed atop sites, which is well consistent with vibrational spectroscopy, whilst the data from the low temperature preparation appears the mixture of atop and hop $(35\%)$. The occupation of hop hollow sites is probably due to an incorrect pre-coverage of atomic oxygen (different from 0.25ml). Similar observation of site mixture also found in recent high resolution XPS measurements using C 1s and O 1s chemical shifts.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.