• Applied Microscopy
• /
• v.43 no.3
• /
• pp.122-126
• /
• 2013

The heterogeneous nucleation of the ${\Theta}^{\prime}$ phase on nanoscale precipitates has been investigated using a combination of three-dimensional atom probe tomography and high-resolution transmission electron microscopy. Two types of ${\Theta}^{\prime}$ phases were observed, namely small (~2 nm thick) cylindrical precipitates and larger (~100 nm) globular precipitates and both appear to be heterogeneously nucleated on the nanoscale precipitates. The composition and crystal structure of precipitates were directly analyzed by combination of two advanced characterization techniques.

• Applied Microscopy
• /
• v.44 no.4
• /
• pp.133-137
• /
• 2014

We suggest a facile transmission electron microscopy (TEM) specimen preparation method for the direct (polymer-free) transfer of layer-area graphene from Cu substrates to a TEM grid. The standard (polymer-based) method and direct transfer method were by TEM, high-resolution TEM, and energy dispersive X-ray spectroscopy (EDS). The folds and crystalline particles were formed in a graphene specimen by the standard method, while the graphene specimen by the direct method with a new etchant solution exhibited clean and full coverage of the graphene surface, which reduced several wet chemical steps and accompanying mechanical stresses and avoided formation of the oxide metal.

• Applied Microscopy
• /
• v.27 no.3
• /
• pp.235-241
• /
• 1997

The microstructure of intermixed $Zn_{1-x}Fe_xSe$ layers in the (ZnSe/FeSe) superstrates grown on (00l) GaAs substrates has been investigated by high -resolution transmission electron microscopy and computer simulations of lattice images. Computer image simulations have been performed by the multislice method under various sample thicknesses and defocusing conditions. The simulated lattice images were compared with the experimental lattice images. Also, CuAu-I type ordering was often observed in the intermixed $Zn_{1-x}Fe_xSe$ alloys. This CuAu-I type ordered structure consists of alternating ZnSe and FeSe monolayers along the <100> and <110> directions.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1993.11a
• /
• pp.150-151
• /
• 1993

• Applied Microscopy
• /
• v.42 no.2
• /
• pp.111-114
• /
• 2012

The scanning electron microscopy is an ideal technique for examining plant surface at high resolution. Most hydrate samples, however, must be fix and dehydrate for observation in the scanning electron microscope. Because the microscopes operate under high vacuum, most specimens, especially biological samples, cannot withstand water removal by the vacuum system without morphological distortion. Cryo-techniques can observe in their original morphology and structure without various artifacts from conventional sample preparation. Rapid cooling is the method of choice for preparing plant samples for scanning electron microscopy in a defined physiological state. As one of cryo-technique, high-pressure freezing allows for fixation of native non-pretreated samples up to $200{\mu}M$ thick and 2 mm wide with minimal or no ice crystal damage for the freezing procedure. In this study, we could design to optimize structural preservation and imaging by comparing cryo-SEM and convention SEM preparation, and observe a fine, well preserved Arabidopsis stem's inner ultrastructure using HPF and cryo-SEM. These results would suggest a useful method of cryo-preparation and cryo-SEM for plant tissues, especially intratubule and vacuole rich structure.

• Applied Microscopy
• /
• v.45 no.4
• /
• pp.195-198
• /
• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• Applied Microscopy
• /
• v.46 no.3
• /
• pp.155-159
• /
• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• Applied Microscopy
• /
• v.36 no.spc1
• /
• pp.41-46
• /
• 2006

Interfacial atomic structure (chemical structure) of a Pd/ZnO hetero junction was investigated by atomic resolution high voltage transmission electron microscopy (ARHVTEM). A misfit dislocation did not work as a stress accommodation mechanism in the ZnO(0001)/Pd (111) interface. But the periodic stress localization occurred in the ZnO($10\bar{1}0$)/(200) interface. The periodicity of the local strain coincided with that of misfit dislocation. Atomic structure image of the ARHVTEM showed that an atomic arrangement across the interface was in the order of O-Zn-Pd. It was shown that mechanical weakness of the ZnO(0001)/Pd(111) interface against cyclic heating is attributable to the absence of the periodic stress localization of the misfit dislocation.

• Applied Microscopy
• /
• v.27 no.1
• /
• pp.101-109
• /
• 1997

The nonstoichiometric ordering of Mg and Nb cations in undoped and La-doped lead magnesium niobate solid solutions has been investigated by means of high-resolution transmission electron microscopy and computer image simulation. High-resolution lattice images were obtained under various microscope imaging conditions and objective apertures. Computer image simulations were performed for a wide range of sample thickness, defocusing value, and long-range order parameter. The simulated images revealed that the lattice images of the ordered regions were predominantly dependent on the long-range order parameter. From the comparisons of the experimental and simulated images for the ordered regions, the long-range order parameter approximately ranged 0.2 to 0 7. It was also found that the ordered structure has a $(NH_4)_3-FeF_6$ structure, which consists of alternating Mg- and Nb-preferred sublattices along the (111) directions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.180-183
• /
• 2003

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.