• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.18 no.11
• /
• pp.874-880
• /
• 2006

The power density and heat dissipation rate per unit area of the telecommunication equipment have been increased with the technology development in the footprint of telecommunication hardware. A proper heat dissipation method from the PCB module is very important to allow reliable operation of its electronic component. In this study, a hybrid air-conditioner for the telecommunication equipment room was designed to save energy and obtain system reliability. For high outdoor temperatures, the hybrid system operates in the vapor compression cycle, while, for low outdoor temperatures, the hybrid system works in the secondary fluid cooling cycle with no operation of the compressor. The performance of the hybrid air-conditioner was measured by varying outdoor and indoor temperatures. The hybrid air-conditioner yielded 50% energy saving compared with the conventional refrigeration system when the mode switch temperature was $8.3^{\circ}C$.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.18 no.5
• /
• pp.1-8
• /
• 2019

Breath analysis using a portable device is better than the classical breath analysis system in terms of installation and operation. There is an increasing need to develop cost-effective equipment for testing gas sensors from the viewpoint of functionalities that can be applied applicable to portable devices. In the present study, an economical gas chamber for in-situ gas measurement is implemented with a single gas chamber without using expensive gas storage and control equipment; the gas response characteristics are analyzed using the above-described chamber. The main features of the implemented gas chamber are simple injection procedure, improved gas diffusion, easy measurement and cleaning, support for low-power mode measurement function for portable devices, and open source platform. Moreover, an analysis of gas response characteristics based on changes in sensor voltage show that the sensitivity and 90% response time are affected by the sensor voltage. Furthermore, the sensitivity graph has an inflection point in a specific range. The gas sensor applied in this study showed fast response speed and high sensitivity for sensor voltages of 3.0-3.5 V, regardless of the concentration of acetone gas, the target gas used in this study.

• Nuclear Engineering and Technology
• /
• v.51 no.1
• /
• pp.13-30
• /
• 2019

This paper presents the recent improvements in the DeCART code for HTGR analysis. A new 190-group DeCART cross-section library based on ENDF/B-VII.0 was generated using the KAERI library processing system for HTGR. Two methods for the eigen-mode adjoint flux calculation were implemented. An azimuthal angle discretization method based on the Gaussian quadrature was implemented to reduce the error from the azimuthal angle discretization. A two-level parallelization using MPI and OpenMP was adopted for massive parallel computations. A quadratic depletion solver was implemented to reduce the error involved in the Gd depletion. A module to generate equivalent group constants was implemented for the nodal codes. The capabilities of the DeCART code were improved for geometry handling including an approximate treatment of a cylindrical outer boundary, an explicit border model, the R-G-B checker-board model, and a super-cell model for a hexagonal geometry. The newly improved and implemented functionalities were verified against various numerical benchmarks such as OECD/MHTGR-350 benchmark phase III problems, two-dimensional high temperature gas cooled reactor benchmark problems derived from the MHTGR-350 reference design, and numerical benchmark problems based on the compact nuclear power source experiment by comparing the DeCART solutions with the Monte-Carlo reference solutions obtained using the McCARD code.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.24 no.2
• /
• pp.325-328
• /
• 2020

This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

• Nuclear Engineering and Technology
• /
• v.54 no.8
• /
• pp.3176-3180
• /
• 2022

A gamma irradiator is a well-developed installation for gamma radiation sterilization. A "shuffle-dwell" mode is preferable for high dose applications. A novel configuration of a shuffle-dwell gamma irradiator is proposed to increase energy utilization and throughput, which would result in higher profitability. While the minimum distance between any irradiation position and each source pencil, the minimum distance between the neighboring irradiation positions and the size of source pencils are kept the same as the current configuration, the irradiation positions and source pencils are rearranged based on the fact that radiation is emitted in an isotropic fashion. The computational results suggest that the proposed configuration requires an 8.7% smaller area and exposes the product to 11.8% more gamma radiation in a 10.7% shorter irradiation time. In other words, the proposed configuration needs a smaller area and shorter irradiation time to have a better performance compared to the current shuffle-dwell gamma irradiator. Note that the claim is based primarily on an analytical calculation. Experimental and manufacturing among other practical considerations will be taken into account in the future work to exhaustively evaluate the performance of the proposed configuration and to compare it with that of the traditional configuration.

• Journal of Sensor Science and Technology
• /
• v.31 no.4
• /
• pp.271-277
• /
• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Progress in Superconductivity and Cryogenics
• /
• v.9 no.1
• /
• pp.47-52
• /
• 2007

This paper presents characteristics analysis of persistent current switch(PCS) system on a small scale by using YBCO coated conductor(CC). A high temperature superconductor(HTS) PCS system mainly consists of a PCS, a HTS magnet load and a magnet power supply(MPS). To design the optimal heater triggering switch. the three-dimensional heat conduction model was analyzed by finite element method(FEM). The electrical equivalent model considering the n-value of CC was applied to analyze current decay during persistent current mode. In the experiment and simulation, the heater was applied with a current of 0.43A and the current was ramped up to 10A and 20A with 0.2A/s. Finally, experimental results of the HTS PCS system have been compared with the theoretical results. It has been concluded that flux creep can not influence the results because the operating current was 40% of critical current and optimal sequential operation of the PCS system is indispensable to enhance its performance.

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.2
• /
• pp.40.3-40.3
• /
• 2019

Our recent observations of the Sun through strong spectral lines have revealed several important properties of the three-minute umbral oscillations inside sunspots -- the oscillations of intensity and Doppler velocity with periods of 2 to 3 minutes. The oscillations usually occur in the form of a time series of oscillation packets each of which lasts 10 to 20 minutes, not as continuous trains. Each oscillation packet is characterized by a singly peaked power spectrum of velocity oscillation. The oscillations propagate in the vertical direction from the photosphere to the corona. In the upper chromosphere, they develop into shocks that eventually collide with the transition region. When shocks propagate along a highly inclined direction, the merging of two successive shocks can take place. Once they enter the corona, they change to linear compressional waves. In the image plane, the three-minute oscillations propagate with high speeds in the transverse direction as well, usually propagating radially outwards from a point, and sometimes accompanying spiraling patterns of Doppler velocity. These observational properties can be theoretically explained by postulating the spatio-temporally localized source of fast MHD waves at a depth of about 2000 km below the surface, the excitation of slow MHD waves via mode conversion near the photosphere, and the resonance of the slow waves in the photospheric layer below the temperature minimum, and the nonlinear development of slow waves in the chromosphere.

• Asia pacific journal of information systems
• /
• v.32 no.3
• /
• pp.656-683
• /
• 2022

The COVID-19 pandemic has profoundly affected the world, inflicting nationwide lockdowns interrupting conventional schooling through schools, colleges and universities. Educational institutions are struggling to maintain learning continuity through remote learning solutions. Still, the students' perception of this 'new normal' mode and pace of learning needs to be examined to ensure the success of these efforts. This study aimed at examining the perception of higher education students in India and Croatia especially with respect to the association between cultural orientation and the e-learning. The period considered for the data collection was from March 2020 to September 2020. Correspondence analysis was attempted to create spatial maps to depict the respondent choices. Students from both the regions agreed to the high-power distance that existed in their cultures and considered the role of device and content to be an important dimension of e-learning for it to be effective, but the results also pointed out some differences in their choices on other culture dimensions as well as factors affecting e-learning which make this study unique and suggest in-depth future research for conclusive results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.155.2-155.2
• /
• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.