• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.6 s.97
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• pp.594-602
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• 2005

In this paper, a new type of 5-pole low pass filter(LPF) having defected ground structure(DGS) and very wide transmission line elements is proposed. The previously presented design method of 3-stage LPF using DGS is generalized to design N-pole LPFs for $N\geq5$. As an example, a 5-pole LPF having DGS is designed and measured. The accurate curve-fitting method to determine the series inductors in the prototype filter, and ultimately the size of DGS is described. The proposed 5-pole LPF has transmission line elements with a very low impedance to realize the required shunt capacitance instead of open stubs. Therefore, open stub. Therefore, open stub, Tee-junction, Cross-junction, and high impedance line are not required for the proposed LPF, while they all have been essential in conventional LPFs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.341-345
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• 2004

A high efficiency and low device stress voltage and current clamping BVS PWM asymmetrical half bridge converter is proposed in this paper. To achieve the ZVS of power switches along the wide load range, the transformer leakage inductor $L_{Ikg}$ is increased. Then, to solve the problem related to ringing in the secondary rectifier caused by the resonance between $L_{Ikg}$ and rectifier junction capacitors, the proposed converter employs a voltage and current clamping cell, which helps voltages and currents of rectifier diodes to be clamped at the output voltage and output current, respectively. Therefore, no RC-snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. In addition, since all energy stored in $L_{Ikg}$ is transferred to the output side, the circulating energy problem can be effectively solved and duty loss does net exist. The operational principle, theoretical analysis, and design considerations are presented. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 425W, 385-170Vdc prototype are presented.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.1-10
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• 2020

The technology and market size of image sensors continue to develop thanks to the release of image sensors that exceed 100 million pixels in 2019 and expansion of black box camera markets for vehicles in addition to existing mobile applications. We review the technology flow of image sensors that have been constantly evolving for 40 years since Hitachi launched a 200,000-pixel image sensor in 1979. Although CCD has made inroads into image sensor market for a while based on good picture quality, CMOS image sensor (CIS) with active pixels has made inroads into the market as semiconductor technology continues to develop, since the electrons generated by the incident light are converted to the electric signals in the pixel, and the power consumption is low. CIS image sensors with superior characteristics such as high resolution, high sensitivity, low power consumption, low noise and vivid color continue to be released as the new technologies are incorporated. At present, new types of structures such as Backside Illumination and Isolation Cell have been adopted, with better sensitivity and high S/N ratio. In the future, new photoconductive materials are expected to be adopted as a light absorption part in place of the pn junction.

• Journal of the Speleological Society of Korea
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• no.82
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• pp.5-7
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• 2007

In this paper, p-n junction formation using screen-printed metalization and co-firing is used to fabricate high-efficiency solar cells on single- crystalline silicon substrates. In order to form high-quality contacts, co-firing of a screen-printed Ag grid on the front and Al on the back surface field is implemented. These contacts require low contact resistance, high conductivity, and good adhesion to achieve high efficiency. Before co-firing, a statistically designed experiment is conducted. After the experiment, a neural network (NN) trained by the error back-propagation algorithm is employed to model the crucial relationships between several input factors and solar cell efficiency. The trained NN model is also used to optimize the beltline furnace process through genetic algorithms.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.393-393
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• 2011

오늘 날 태양전지 산업에서 가장 많은 생산을 하고 있는 분야는 결정질 태양전지분야이다. 현재는 이러한 시대적 요구에 따라 많은 연구가 진행되고 있는데 특히 junction을 이루는 n layer의 doping profile을 선택적으로 형성하여 개방전압 및 단락전류를 향상시키는 연구가 활발히 진행되고 있다. 본 연구는 이러한 n type layer의 doping profile을 선택적으로 형성하는 selective emitter solar cell에 관한 연구로써 SILVACO simulation을 이용하여 low Rs 영역은 고정하고 high Rs 영역의 doping depth를 가변 함으로써 high Rs 영역을 달리 형성하는 방법으로 selective emitter solar cell의 high Rs영역의 최적화에 관한 전산모사를 실시하였다. 각각의 가변조건에 따라 quantum efficiency를 통한 광학적 분석과 I-V를 통한 전기적 분석을 하여 high Rs영역을 최적화 하였다.

• Ceramist
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• v.23 no.2
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• pp.145-165
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• 2020

Halide perovskites are promising photovoltaic materials due to their excellent optoelectronic properties like high absorption coefficient, low exciton binding energy and long diffusion length, and single-junction solar cells consisting of them have shown a high certified efficiency of 25.2%. Despite of high efficiency, perovskite photovoltaics show poor stability under actual operational condition, which is the mostly critical obstacle for commercialization. Given that the stability of the perovskite devices is significantly affected by charge-transporting layers, the use of inorganic charge-transporting layers with better intrinsic stability than the organic counterparts must be beneficial to the enhanced device reliability. In this review article, we summarized a number of studies on the inorganic charge-transporting layers of the perovskite solar cells, especially focusing on their effects on the enhanced device reliability.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1442-1444
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• 2001

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si TFT driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

• Economic and Environmental Geology
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• v.54 no.4
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• pp.465-473
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• 2021

This numerical study aims at analyzing the effect of flow characteristics, caused by geometrical features such as intersecting angles, on solute mixing at fracture junctions. It showed that not only Pe, the ratio of advection to diffusion, but also the intersecting angles played an important role in solute mixing at the junction. For the intersection angles less than 90°, the fluid flowed to the outlet in the same direction as the injected flow direction, which increased the contact at the junction with the streamlines coming from the different inlets. On the other hand, for the intersecting angles greater than 90°, the fluid flowed out to the outlet opposite to the flow direction in the inlet, leading to minimizing the contact at the junction. Therefore, in the former case, solute mixing occurred even at high Pe, and in the latter case, solutes transport along the streamlines even at low Pe. For Pe < 1, the complete mixing model was known to occur, but for the intersecting angle greater than 150°, no complete solute mixing occurred. Overall, the transition from the complete mixing model to the streamline-routing model occurred for Pe = 0.1 - 100, but it highly depended on the intersecting angles. Specifically, the transition occurred at Pe = 0.1 - 10 for intersecting angles ≧ 150° and at Pe = 10 - 100 for intersecting angles ≦ 30°. For Pe > 100, the streamline-routing model was dominant regardless of intersecting angles. For Pe > 1,000, the complete streamline-routing model appeared only for the intersecting angles greater than 150°. For the intersecting angles less than 150°, the streamline-routing model dominated over the complete solute mixing, but solute mixing still occurred at the fracture junction.