• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.26 no.5
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• pp.351-358
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• 2013

In the electric power supplying industry, outdoor sealing end (pothead) is used and sometimes it is necessary to check the seismic qualification analysis or test which is intended to demonstrate that the equipment have adequate integrity to withstand stress of the specified seismic event and still performs their function. And since the pothead is mounted on the supporting jig, the avoidance of resonance between the pothead and jig is required. In order to design jig, three types of optimization are performed to get the minimum weight while satisfying the natural frequency constraint using ANSYS. Optimal array, position and thickness of truss members of the jig are obtained through topology, shape and sizing optimization process, respectively. And seismic analysis of the pothead on the jig for given RRS acceleration computes the displacement and stress of the pothead which shows the safety of the pothead. The obtained natural frequency, mass, and member thickness of the jig are compared with those of the reference jig which was used for seismic experimental test. The numerical results of the jig in the research is more optimized than the jig used in the experimental test.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.73-77
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• 2005

In this study, we investigated response characteristics of liquid crystal display (LCD) with different operating mode of nematic liquid crystals (NLCs) such as 45 $^{circ} twisted nematic (TN), 67.3 $^{circ} TN and electrical controlled birefringence (ECB) on the rubbed polyimide (PI) surface with side chains. The pretilt angles generated on polyimide surfaces of the three kinds of LCD operating modes were about 12 $^{circ} that was higher than those of conventional TN-LCOs. Also, the Electro-optical (EO) performance of these LCOs showed stable condition. Low transmittance of the 45 $^{circ} TN and 67.3 $^{circ} TN cell on the rubbed PI surface were measured by using low cell gap d. The fast response time in ECB cell among the three kinds of LCD operating modes was achieved. Also, thermal ability of fast 90 $^{circ} TN-LCD was investigated. The threshold voltage and the response time of thermal stressed TN-LCOs showed the same performances on no thermal stressed TN-LCOs. There was little change of value in these TN cells. However, the transmittances of TN-LCOs on the rubbed PI surface decreased while increasing thermal stress time. Therefore, the thermal stability of TN-LCD was decreased by the high thermal stress for the long duration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.78-80
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• 2001

DC accelerating aging characteristics of praseodymium-based ZnO varistors doped with $Dy_2O_3$ were investigated with sintering time. The varistor sintered for 1h exhibited the highest nonlinearity, with a nonlinear exponent of 66.61 and a leakage current of $1.16{\mu}A$, whereas they did not exhibit relatively high stability. The varistor sintered for 2h having nonlinear exponent of 54.81 and leakage current of $2.52{\mu}A$ showed very excellent stability, which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.19%, -4.00%, and +75.79% for 2h, under DC accelerated aging stress, such as ($0.85\;V_{1mA}/115^{\circ}C$/24h)+($0.90\;V_{1mA}/120^{\circ}C$/24h)+($0.95\;V_{1mA}/125^{\circ}C$/24h)+($0.95\;V_{1mA}/150^{\circ}C$/24h).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1937-1941
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• 2004

We present lateral actuated piezoelectric actuator using U-shaped PZT strip and lever structure for the RF switch application. In the previous study of RF switch, they used horizontal contact switch fabricated by thin film metals. However, thin film metals could not generate large contact force due to low stiffness. In this work, we suggest lateral contact switch which makes large contact force by increasing stiffness. In addition, we use PZT actuator for the high force actuation. Generally actuator using thin film PZT moves to the vertical direction due to the neutral axis shift. Therefore we need lateral motion generation mechanism based on the thin film PZT actuator. In order to increase lateral motion of thin film PZT actuator, we use U-shaped PZT actuator using residual stress control. Also, thin film PZT actuator can generate very small lateral motion of 120${\times}$10$^{-6}$ ${\mu}{\textrm}{m}$/V for d$_{31}$ mode, thus we suggest lever structure to increase stroke amplification. From the experimental study, fabricated PZT actuator shows maximum lateral displacement of 1 ${\mu}{\textrm}{m}$, and break down voltage of the thin film PZT actuator is above 16V.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.317-322
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• 2015

The metal oxide varistor (MOV) is a major component of the surge protection devices (SPDs) currently in use. The device is judged to be faulty when fatigue caused by the continuous inflow of lightning accumulates and reaches the damage limit. In many cases, induced lightning resulting from lightning strikes flows in to the device several times per second in succession. Therefore, the frequency or the rate at which the SPD is actually exposed to stress, called a surge, is outside the range of human perception. For this reason, the protective device should be replaced if it actually approaches the end of its life even though it is not faulty at present, currently no basis exists for making the judgment of remaining lifetime. Up to now, the life of an MOV has been predicted solely based on the number of inflow surges, irrespective of the magnitude of the surge current or the amount of energy that has flowed through the device. In this study, nonlinear data that shows the damage to an MOV depending on the count of surge and the amount of input current were collected through a high-voltage test. Then, a failure prediction algorithm was proposed by preparing a look-up table using the results of the test. The proposed method was experimentally verified using an impulse surge generator

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.720-723
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• 2005

We studied the quantitativity of the image sticking which is occured by the resicual DC in the fringe-electric field switching (FFS) mode. Actually, in the FFS mode driven by the strong fringe electric field, the asymmetric residual DC was formed in the bottom substrate. It made the impurity ion stick to the alignment layer such as polyimde layer. Thus, the differnece of the luminance existes after the stress check pattern is applied to the panel so that we can see the image sticking. This image sticking decreases as the residual DC value between specific patterns decreases. Therefore, it is necessary to control the residual DC for the FFS mode with the high image quality. It is possible to eliminate the image stiking when the extra pixel voltage is applied through the circuit tunning for reducing the difference of residual DC accroding to the panel position.