• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.2
• /
• pp.17-24
• /
• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Proceedings of the KIEE Conference
• /
• summer
• /
• pp.1187-1189
• /
• 2004

This paper presents a boost circuit topology driving in high - frequency. It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage stress in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than voltage stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment result compares the existing voltage stress of free-wheeling diode with the proposed voltage stress of that.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.43-46
• /
• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Proceedings of the KIPE Conference
• /
• 2019.07a
• /
• pp.83-85
• /
• 2019

The use of high voltage gain converters is essential for the distributed power generation systems with renewable energy sources such as the fuel cells and solar cells due to their low voltage characteristics. In this paper, a high voltage gain topology combining cascode Inverting Buck-Boost converter and voltage multiplier structure is introduced. In proposed converter, the input voltage is connected in series at the output, the portion of input power is directly delivered to the load which results in continuous input current. In addition, the voltage multiplier stage stacked in proper manner is not only enhance high step-up voltage gain ratio but also significantly reduce the voltage stress across all semiconductor devices and capacitors. As a result, the high current-low voltage switches can be employed for higher efficiency and lower cost. In order to show the feasibility of the proposed topology, the operation principle is presented and the steady-state characteristic is analyzed in detail. A 380W-40/380V prototype converter was built to validate the effectiveness of proposed converter.

• Journal of Power Electronics
• /
• v.18 no.1
• /
• pp.11-22
• /
• 2018

This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.25 no.3
• /
• pp.157-161
• /
• 2020

High voltage gain converters are essential for distributed power generation systems with renewable energy sources, such as fuel cells and solar cells, because of their low voltage characteristics. This paper introduces a novel nonisolated DC-DC converter topology developed by combining an inverting buck-boost converter and voltage multipliers. In the proposed converter, the input voltage is connected in series with the output, and the majority of the input power is directly delivered to the load. The voltage multipliers are stacked in series to achieve high step-up voltage gain. The voltage stress across all of the switches and capacitors can be significantly reduced. As a result, the switches with low voltage ratings can be used to achieve high efficiency and low cost. To verify the validity of the proposed topology, a 360-W prototype converter is built to obtain the experimental results.

• Proceedings of the KIPE Conference
• /
• 2008.06a
• /
• pp.505-507
• /
• 2008

A conventional active-clamp forward (ACF) converter is a favorable candidate in low-to-medium power applications. However, the switches suffer from high voltage stress, i.e., sum of the input voltage and the reset capacitor voltage. Therefore, it is not suitable for high input voltage applications such as a front-end converter of which the input voltage is about 400-$V_{dc}$. To solve this problem, three-switch ACF (TS-ACF) converter, which employs two main switches and one auxiliary switch with low voltage stress, is proposed. Utilizing low-voltage rated switches, the proposed converter is promising for high input voltage applications with high efficiency and low cost.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.5
• /
• pp.1632-1642
• /
• 2014

This paper presents an interleaved resonant converter to reduce the voltage stress of power MOSFETs and achieve high circuit efficiency. Two half-bridge converters are connected in series at high voltage side to limit MOSFETs at $V_{in}/2$ voltage stress. Flying capacitor is used between two series half-bridge converters to balance two input capacitor voltages in each switching cycle. Variable switching frequency scheme is used to control the output voltage. The resonant circuit is operated at the inductive load. Thus, the input current of the resonant circuit is lagging to the fundamental input voltage. Power MOSFETs can be turn on under zero voltage switching. Two resonant circuits are connected in parallel to reduce the current stress of transformer windings and rectifier diodes at low voltage side. Interleaved pulse-width modulation is adopted to decrease the output ripple current. Finally, experiments are presented to demonstrate the performance of the proposed converter.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.12 no.3
• /
• pp.114-123
• /
• 1998

The multi-resonant converter(MRC) minimizes a parasitic oscillation by using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So it si possible that the converter operated at a high frequency has a high efficiency because the losses are reduced. Such a MHz high frequency applications provide a high power density [W/inch3] of the converter. But the resonant voltage stress across a switch of the resonant tank circuit is 4~5 times a input voltage. This h호 voltage stress increases the conduction loss because of on-resistance of a MOSFET with higher rating. Thus, in this paper we proposed the alternated multi-resonant converter (AT MRC) differ from the clamp mode multi-resonant converter and applicated it to the forward MRC. The AT forward MRC can reduce the voltage stress to 2~3 times a input voltage by using two series input capacitor. The control circuit is simple because tow resonant switches are driven directly by the output pulse of the voltage controled oscillator. This circuit type is verified through the experimental converter with 48V input voltage, 5V/50W output voltage/power and PSpice simulation. the measured maximum voltage stress is 170V of 2.9 times the input voltage and the maximum efficiency of 81.66% is measured.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.26 no.4
• /
• pp.57-66
• /
• 2012

When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.