• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1216-1221
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• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Journal of Korea Society of Industrial Information Systems
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• v.29 no.1
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• pp.117-123
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• 2024

Bubbles generated in water receive an upward buoyant force due to the density and pressure difference of the surrounding fluid. Additionally, the behavior, shape, and heat exchange process of bubbles vary depending on the viscosity, surface tension, rising speed, and size difference with the surrounding fluid. In this study, we modeled speed, and heat transfer of a high-temperature single bubble rising in a cylindrical water tank. For this purpose, velocity, and temperature of the bubbles were calculated using theoretical equations, to be compared with numerical simulation results. The numerical analysis was performed using a commercial software, and the stability of the numerical analysis with mesh size was confirmed through calculation of the grid convergence index. The numerical analysis of the rising speed and temperature of a single bubble showed the values to converge when the minimum cell size was 1/160 of the bubble diameter, and the temperature decrease was confirmed to be the same as that of the surrounding fluid within 0.05 seconds.

• Journal of Surface Science and Engineering
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• v.46 no.6
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• pp.248-257
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• 2013

It is generally recognized that thin Pd-Cu alloy films fabricated by sputtering show a wide range of microstructures and properties, both of which are highly dependent on the sputtering conditions. In view of this, the present study aims to investigate the relationship between the performance of hydrogen separation membranes and the microstructure of Pd alloy films depending on sputtering deposition conditions such as substrate temperature, working pressure, and DC power. We fabricated thin and dense Pd-Cu alloy membranes by the micro-polishing of porous Ni support, an advanced Pd-Cu sputtered multi-deposition under the conditions of high substrate temperature / low working pressure / high DC power, and a followed by Cu-reflow heat-treatment. The result of a hydrogen permeation test indicated that the selectivity for $H_2/N_2$ was infinite because of the void-free and dense surface of the Pd alloy membranes, and the hydrogen permeability was 10.5 $ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ for a 6 ${\mu}m$ membrane thickness.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.1-55.1
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• 2010

Cost efficient and large area deposition of superior quality $Al_2O_3$ doped zinc oxide (AZO) films is instrumental in many of its applications including solar cell fabrication due to its numerous advantages over ITO films. In this study, AZO films were prepared by a highly efficient rotating cylindrical dc magnetron sputtering system using AZO target, which has a target material utilization above 80%, on glass substrates in argon ambient. A detailed analysis on the electrical, optical and structural characteristics of AZO thin films was carried out for solar cell application. The properties of films were found to critically depend on deposition parameters such as sputtering power, substrate temperature, working pressure, and thickness of the films. A low resistivity of ${\sim}5.5{\times}10-4{\Omega}-cm$ was obtained for films deposited at 2kW, keeping the pressure and substrate temperature constant at 3 mtorr and $230^{\circ}C$ respectively, mainly due to an increase in carrier mobility and large grain size which would reduce the grain boundary scattering. The increase in carrier mobility with power can be attributed to the columnar growth of AZO film with (002) preferred orientation as revealed by XRD analysis. The AZO films showed a high transparency of>87% in the visible wavelength region irrespective of deposition conditions. Our results offers a cost-efficient AZO film deposition method which can fabricate films with significant low resistivity and high transmittance that can find application in thin-film solar cells.

• Atmosphere
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• v.25 no.1
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• pp.31-49
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• 2015

From the hourly data of 75 Korean weather stations over a 12-year period (2001~2012), this study has chosen three cases (January 12, 2006; January 11, 2008; and February 22, 2009) of multiple freezing rains and investigated the atmospheric circulations that seemed to cause the events. As a result, the receding high pressure type (2006), prevailing high pressure type (2008), and warm front type (2009) are confirmed as synoptic patterns. In all three cases, freezing rain was found in regions with a strong ascending current near the end point of a low-level jet that carried the warm humid air from low latitudes. The strong ascending current resulted from lower-level convergence and upper-level divergence. In 2006 and 2009, the melting process was confirmed. In 2008, the supercooled warm rain process (SWRP) was confirmed. In contrast to existing SWRP theory, it was found that the cool air produced at the middle atmosphere and near the earth's surface led to the formation of freezing rain. The sources of this cool air were supposed to be the evaporative latent heat and the cold advection coming from the northeast. On the other hand, a special case was detected, in which the freezing rain occurred when both the soil surface temperature and surface air temperature were above $0^{\circ}C$. The thickness distributions related to freezing rain in Korea were found to be similar to those in North America. A P-type nomogram was considered for freezing rain forecasting; however, it was not relevant enough to Korea, and few modifications were needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.16 no.4
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• pp.213-224
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• 1979

The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.17-22
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• 2007

Low-cycle environmental fatigue tests of cast austenitic stainless steel CF8M at the condition of fatigue strain rate 0.04%/sec were conducted at the pressure and temperature, 15MPa, $315^{\circ}C$ of a operating pressurized water reactor. The used test rig was limited to install an extensometer at the gauge length of the cylindrical fatigue specimen inside the small autoclave. So the magnet type LVDT's were used to measure the fatigue displacement at the specimen shoulders inside the high temperature and high pressure water autoclave. However, the displacement and strain measured at the specimen shoulders is different from the one at the gauge length for the geometry and the cyclic strain hardening effect. FEM calculated the displacement and the strain of the gauge length from the data measured at the shoulders. Tensile test properties in elastic and plastic behavior of CF8M material were used in the FEM analysis. A series of low cycle fatigue tests simulating the cyclic strain hardening effect verified that the FEM calculation was well agreed with the simulated tests. The process and method developed in this study would be so useful to produce reliable environmental fatigue curves of CF8M stainless steel in pressurized water reactors.

• Journal of Technologic Dentistry
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• v.40 no.3
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• pp.125-131
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• 2018

Purpose: Automatic dental prosthesis manufacturing process was accelerated by the spread of dental CAD / CAM system. The CAD / CAM system with milling alloys were needed supplement. So, sintered alloy blocks were introduced. In this study, we want to study sintered alloy block. And to evaluate the alloy block manufacture and alloy properties. Methods: The alloy powders were prepared by high pressure water dispersion method. The sintered alloy blocks were prepared by low temperature pressing method. Their components observation were EDX, and the alloy structure was observed by XRD. Results: Co-Cr alloy powders were observed to have a circle shape with an average diameter of about $100{\mu}m$ and a Ni-Cr alloy powder had a circle shape with an average diameter of about $50{\mu}m$. The Co-Cr alloy block is composed of Co (34.62 wt%), Cr (17.33 wt%), Mo (2.98 wt%), Si (0.36 wt%) and C (44.17 wt%). The Ni-Cr alloy powder was composed of Ni (40.29 wt%), Cr (19.37 wt%), Mo (3.53 wt%), Si (0.52 wt%) and C (33.18 wt%). The peak of the Co and CoCr peaks were observed in the CoCr alloy body by the means of XRD study. Cr2Ni3 of the peak was observed in the Ni-Cr alloy material. Conclusion : As a result, the following conclusions were obtained. 1. Prepared by high-pressure water-law Co-Cr alloy powder has an average diameter $100{\mu}m$, Ni-Cr alloy powder was found to have the form of sphere having an average diameter $50{\mu}m$. 2. Co-Cr alloy and Ni-Cr alloy block produced by low-temperature processing showed a certain ratio. 3. In the XRD study, Co phase appeared in Co-Cr alloy block after sintering. and Cr2Ni3 phase appeared in Ni-Cr alloy block after sintering.