• Title/Summary/Keyword: high temperature high pressure

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Fabrication of IGZO-based Oxide TFTs by Electron-assisted Sputtering Process

  • Yun, Yeong-Jun;Jo, Seong-Hwan;Kim, Chang-Yeol;Nam, Sang-Hun;Lee, Hak-Min;O, Jong-Seok;Kim, Yong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.273.2-273.2
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    • 2014
  • Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

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Characteristics and Comparison of 2016 and 2018 Heat Wave in Korea (2016년과 2018년 한반도 폭염의 특징 비교와 분석)

  • Lee, Hee-Dong;Min, Ki-Hong;Bae, Jeong-Ho;Cha, Dong-Hyun
    • Atmosphere
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    • v.30 no.1
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    • pp.1-15
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    • 2020
  • This study analyzed and compared development mechanisms leading to heat waves of 2016 and 2018 in Korea. The European Centre for Medium-Range Weather Forecasts Reanalysis Interim (ERA Interim) dataset and Automated Surface Observing System data are used for synoptic scale analysis. The synoptic conditions are investigated using geopotential height, temperature, equivalent potential temperature, thickness, potential vorticity, omega, outgoing longwave radiation, and blocking index, etc. Heat waves in South Korea occur in relation to Western North Pacific Subtropical High (WNPSH) pressure system which moves northwestward to East Asia during summer season. Especially in 2018, WNPSH intensified due to strong large-scale circulation associated with convective activities in the Philippine Sea, and moved farther north to Korea when compared to 2016. In addition, the Tibetan high near the tropopause settled over Northern China on top of WNPSH creating a very strong anticyclonic structure in the upper-level over the Korean Peninsula. Unlike 2018, WNPSH was weaker and centered over the East China Sea in 2016. Analysis of blocking indices show wide blocking phenomena over the North Pacific and the Eurasian continent during heat wave event in both years. The strong upper-level ridge which was positioned zonally near 60°N, made the WNPSH over the South Korea stagnant in both years. Analysis of heat wave intensity (HWI) and duration (HWD) show that HWI and HWD in 2018 was both strong leading to extreme high temperatures. In 2016 however, HWI was relatively weak compared to HWD. The longevity of HWD is attributed to atmosphere blocking in the surrounding Eurasian continent.

Hydrogenation Properties of Mg-5 wt.% TiCr10Nbx (x=1,3,5) Composites by Mechanical Alloying Process (기계적 합금화법으로 제조된 Mg-5 wt.% TiCr10Nbx (x=1,3,5) 복합재료의 수소화 특성 평가)

  • Kim, Kyeong-Il;Hong, Tae-Whan
    • Korean Journal of Metals and Materials
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    • v.49 no.3
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    • pp.264-269
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    • 2011
  • Hydrogen and hydrogen energy have been recognized as clean energy sources and high energy carrier. Mg and Mg alloys are attractive hydrogen storage materials because of their lightweight and low cost materials with high hydrogen capacity (about 7.6 wt.%). However, the commercial applications of the Mg hydrides are currently hinder by its high absorption/desorption temperature, and very slow reaction kinetics. However, Ti and Ti based hydrogen storage alloys have been thought to be the third generation of alloys with a high hydrogen capacity, which makes it difficult to handle because of high reactivity. One of the most methods to develope kinetics was addition of transition metal. Therefore, Mg-Ti-Cr-Nb alloy was fabricated to add TiCrNb by hydrogen induced mechanical alloying. TiCrNb systems have included transition metals, low operating temperatures and hydrogen storage materials. As-received specimens were characterized using X-ray Diffraction analysis (XRD), Scanning Electron Microscopy (SEM) and Thermo Gravimetric analysis/Differential Scanning Calorimetry (TG/DSC). $Mg-TiCr_{10}Nb$ systems were evaluated for hydrogen kinetics by Sievert's type Pressure-Composition-Isotherm (PCI) equipment. The operating temperature range was 473, 523, 573 and 623 K.

Inhibitory Effects of Panax ginseng C. A. Mayer Treated with High Temperature and High Pressure on Oxidative Stress (산화적 스트레스에 대한 고온고압처리 인삼의 억제 효과)

  • Yoon, Bo-Ra;Lee, Young-Jun;Hong, Hee-Do;Lee, Young-Chul;Kim, Young-Chan;Rhee, Young Kyoung;Kim, Kyung-Tack;Lee, Ok-Hwan
    • The Korean Journal of Food And Nutrition
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    • v.25 no.4
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    • pp.800-806
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    • 2012
  • Reactive oxygen species (ROS) are produced by oxidative stresses which cause various chronic diseases such as diabetes and obesity. Ginseng (Panax ginseng C.A. Mayer) has been reported to contain various biological activities such as anti-cancer, anti-diabetic, neuroprotective, radioprotective, anti-amnestic and anti-aging effects. In this study, we investigated the effects of Panax ginseng, treated with high temperatures and high pressures, on oxidative stress in C2C12 myoblasts and 3T3-L1 adipocytes. Oxidative stress was induced in the C2C12 cells through the introduction of $H_2O_2$ (1 mM), and cells were then treated with various ginseng preparations: dried white ginseng (DG), steamed ginseng (SG) and high temperature and high pressure treated ginseng (HG). In addition, 3T3-L1 preadipocytes were treated with various ginsengs for up to 8 days following standard induction of differentiation. Our results show that HG treatment significantly protected oxidative stress in both cell lines and enhanced gene expression of antioxidant enzymes. Therefore, in this study, we investigated the protective effects of ginseng on the oxidative stress of adipocytes and muscle cells.

Microstructure and EDM Processing of $MoSi_2$ Intermetallic Composite ($MoSi_2$ 금속간화합물 복합재료의 미세구조와 방전가공특성)

  • Yoon, Han-Ki;Lee, Sang-Pill;Yoon, Kyong-Wok;Kim, Dong-Hyun
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2002.05a
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    • pp.23-28
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    • 2002
  • This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

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Characterization of AlN Thin Films Grown by Pulsed Laser Deposition with Various Nitrogen Partial Pressure (다양한 질소분압에서 펄스레이저법으로 성장된 AlN박막의 특성)

  • Chung, J.K.;Ha, T.K.
    • Transactions of Materials Processing
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    • v.28 no.1
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    • pp.43-48
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    • 2019
  • Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

Study on Pressure-dependent Growth Rate of Catalyst-free and Mask-free Heteroepitaxial GaN Nano- and Micro-rods on Si (111) Substrates with the Various V/III Molar Ratios Grown by MOVPE

  • Ko, Suk-Min;Kim, Je-Hyung;Ko, Young-Ho;Chang, Yun-Hee;Kim, Yong-Hyun;Yoon, Jong-Moon;Lee, Jeong-Yong;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.180-180
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    • 2012
  • Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

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Effect of ZnCl2 Co-catalyst in the Synthesis of Dimethyl Carbonate from Ethylene Carbonate and Methanol by Using Base Catalysts (염기 촉매를 이용한 디메틸카보네이트 합성에서 ZnCl2 조촉매의 영향)

  • Kim, Dong-Woo;Park, Moon-Seok;Kim, Moon-Il;Park, Dae-Won
    • Korean Chemical Engineering Research
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    • v.50 no.2
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    • pp.217-222
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    • 2012
  • The synthesis of dimethyl carbonate(DMC) is a promising reaction for the use of naturally abundant carbon dioxide. DMC has gained considerable interest owing to its versatile chemical reactivity and unique properties such as high oxygen content, low toxicity, and excellent biodegradability. In this study, the synthesis of DMC through the transesterification of ethylene carbonate(EC) with methanol was investigated by using ionic liquid and metal oxide catalysts. The screening test of different catalysts revealed that choline hydroxide ([Choline][OH]) and 1-n-butyl-3-methyl imidazolium hydroxide([BMIm][OH]) had better catalytic performance than metal salts catalysts such as MgO, ZnO and CaO. The effects of reaction parameters such as reaction temperature, MeOH/EC mole ratio, and carbon dioxide pressure on the reactivity of [Choline][OH] catalyst were discussed. High temperature and high MeOH/EC mole ratio were favorable for high conversion of EC. However, the yield of DMC showed a maximum when carbon dioxide pressure was 1.34 MPa, and then it decreased for higher carbon dioxide pressure. Zinc chloride($ZnCl_2$) was used as co-catalyst with the ionic liquid catalyst. The mixed catalyst showed a synergy effect on the EC conversion and DMC yield probably due to the acid-base properties of the catalysts.

Experimental Study on the Suppression of low Frequency Unstable Burning Occurred in a Gas Generator Using Bundle Cylindrical Grain (다발 원통형 그레인을 사용한 가스발생기의 저주파 연소불안정 소멸에 대한 실험적 연구)

  • Sung Hong-Gye;Byun Jong-Ryul
    • Journal of the Korean Society of Propulsion Engineers
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    • v.8 no.3
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    • pp.10-16
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    • 2004
  • Untypical unstable burning with very low frequency was observed at firing test of a gas generator using bundle cylindrical grain. The pressure unbalance between inside and outside of cylindrical grain brought such a low unstable burning. The grains were radially holed so that the high pressure gas inside of grain could quickly moved outward of gain, resulting dissipation of the pressure unbalance However too many holes were required to let the burning be stable for all operation regime from low to high temperature of grain and resultantly deteriorate the Progressive increase of gas amount produced by a gas generator. So another idea using grids located both sides of a bundle grain was applied to dissipate actively large vorticities enhanced by unbalance pressure distribution in a combustor. Finally stable burning with progressively increase of gas was established by application of 5${\times}$5 grid slightly away bundle grain to move bundle gain freely in case pressure unbalance were occurred inside of combustor.

Evaluation of the Crack Tip Stress Distribution Considering Constraint Effects in the Reactor Pressure Vessel (구속효과를 고려한 원자로 압력용기 균열선단에서의 응력분포 예측)

  • Kim, Jin-Su;Choe, Jae-Bung;Kim, Yeong-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.4
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    • pp.756-763
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    • 2001
  • In the process of integrity evaluation for nuclear power plant components, a series of fracture mechanics evaluation on surface cracks in reactor pressure vessel(RPV) must be conducted. These fracture mechanics evaluation are based on stress intensity factor, K. However, under pressurized thermal shock(PTS) conditions, the combination of thermal and mechanical stress by steep temperature gradient and internal pressure causes considerably high tensile stress at the inside of RPV wall. Besides, the internal pressure during the normal operation produces high tensile stress at the RPV wall. As a result, cracks on inner surface of RPVs may experience elastic-plastic behavior which can be explained with J-integral. In such a case, however, J-integral may possibly lose its validity due to constraint effect. In this paper, in order to verify the suitability of J-integral, tow dimensional finite element analyses were applied for various surface cracks. A total of 18 crack geometries were analyzed, and $\Omega$ stresses were obtained by comparing resulting HRR stress distribution with corresponding actual stress distributions. In conclusion, HRR stress fields were found to overestimate the actual crack-tip stress field due to constraint effect.