• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.2
• /
• pp.89-93
• /
• 2017

GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

• Economic and Environmental Geology
• /
• v.30 no.1
• /
• pp.35-49
• /
• 1997

The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.58-58
• /
• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Journal of the Korean Ceramic Society
• /
• v.28 no.11
• /
• pp.897-907
• /
• 1991

This study was conducted to research the formation and the color development of CoO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing CoO-ZnO-Fe2O3, in which CoO causes the color, as a basic composition, $\chi$CoO.(1-$\chi$)ZnO.Fe2O3 system, $\chi$CoO.(1-$\chi$)ZnO.TiO2 system and $\chi$CoO.(1-$\chi$)ZnO.SnO2 system were prepared with $\chi$=0, 0.2, 0.5, 0.7, 1.0 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 90 minutes. These specimens were analyzed by the reflectance measurement and the X-ray diffraction analysis and the results were summarized as follows: 1. All of the specimens formed the spinel structure and were colored with stable yellow or blue. 2. As the content of CoO and Fe2O3 in the specimens being increased, the reflectance of each specimen was measured becoming lower and the colors were changed from yellow to greyish blue and from blue to dark blue. 3. As the substituting amount of Co2+ ion for Zn2+ ion in $\chi$CoO-ZnO-TiO2-SnO2 system being increased, the colors were changed from blue to greyish blue. The colors were changed from yellow to grayish green owing to the tetrahedral Co2+ ions being increased, the octahedral Co2+ ions being decreased with increasing the amount of Sn4+ ions. 4. CoO-ZnO-Fe2O3-TiO2-SnO2 system, in which Zn2+ was substituted with Co2+ and Fe3+ was substituted with Ti4+ and Sn4+, easily formed the spinel structure without regard to the amount of substitution or the ion owing to the selectivity of the coordination number: 4 of Zn2+, 4 of Co2+, 6 of Fe3+ or 6 of Ti4+ and Sn4+.

• Journal of Periodontal and Implant Science
• /
• v.42 no.2
• /
• pp.59-63
• /
• 2012

Purpose: This study evaluated the surface characteristics and bond strength produced using a novel technique for coating hydroxyapatite (HA) onto titanium implants. Methods: HA was coated on the titanium implant surface using a super-high-speed (SHS) blasting method with highly purified HA. The coating was performed at a low temperature, unlike conventional HA coating methods. Coating thickness was measured. The novel HA-coated disc was fabricated. X-ray diffraction analysis was performed directly on the disc to evaluate crystallinity. Four novel HA-coated discs and four resorbable blast medium (RBM) discs were prepared. Their surface roughnesses and areas were measured. Five puretitanium, RBM-treated, and novel HA-coated discs were prepared. Contact angle was measured. Two-way analysis of variance and the post-hoc Scheffe's test were used to analyze differences between the groups, with those with a probability of P<0.05 considered to be statistically significant. To evaluate exfoliation of the coating layer, 7 sites on the mandibles from 7 mongrel dogs were used. Other sites were used for another research project. In total, seven novel HA-coated implants were placed 2 months after extraction of premolars according to the manufacturer's instructions. The dogs were sacrificed 8 weeks after implant surgery. Implants were removed using a ratchet driver. The surface of the retrieved implants was evaluated microscopically. Results: A uniform HA coating layer was formed on the titanium implants with no deformation of the RBM titanium surface microtexture when an SHS blasting method was used. Conclusions: These HA-coated implants exhibited increased roughness, crystallinity, and wettability when compared with RBM implants.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.26 no.4A
• /
• pp.761-766
• /
• 2006

Polymer composite are increasingly considered as structural components for use in civil engineering, on account of their enhanced strength-to-weight ratios. Unsaturated polyester (UP) resin have been widely used for the matrix of composites such as FRP and polymer composite, due to its excellent adhesive. Polymer nanocomposites are new class of composites derived from the nano scale inorganic particles with dimensions typically in the range of 1 to 1000 nm that are dispersed in the polymer matrix homogeneously. Owing to the high aspect ratio of the fillers, mechanical, thermal, flame, retardant and barrier properties are enhanced without significant loss of clarity, toughness or impact strength. To prepare the MMT (Montmorillonite)-UP exfoliated nanocomposites, UP was mixed with MMT at $60^{\circ}C$ for 3 hours by using pan mixer. XRD (X-ray diffraction) pattern of the composites and TEM (Transmission Electron Micrographs) showed that the interlayer spacing of the modified MMT were exfoliated in polymer matrix. The mechanical properties also supported these findings, since in general, tensile strength, modulus with modified MMT were higher than those of the composites with unmodified MMT. The thermal stability of MMT-UP nanocomposite is better than that of pure UP, and its glass transition temperature is higher than that of pure UP. The polymer concrete made with MMT-UP nanocomposite has better mechanical properties than of pure UP. Therefore, it is suggested that strength and elastic modulus of polymer concrete was found to be positively tensile strength and tensile modulus of the MMT-UP nanocomposites.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.4
• /
• pp.125-130
• /
• 2024

Preparation of ferromagnetic powders for the mixture of hematite and pure Mg powders by ball milling has been investigated. Also, consolidation of the ball-milled powders was performed in a spark plasma sintering machine at 800-1,000℃. It is found that a ferromagnetic Fe-MgO composite powders are obtained by ball milling of hematite and pure Mg powders before 1 hour. The magnetization and coercivity of ball-milled samples change at the results of the solid state reaction of hematite by pure Mg during ball milling. The saturation magnetization of ball-milled samples increases with increasing ball milling time and reaches to a maximum value of 93.4 emu/g after 5 hours of ball milling. Shrinkage change after sintering of ball-milled sample for 5 hours was significant above 300℃ and gradually increased with increasing temperature up to 800℃. X-ray diffraction result shows that the average grain size of Fe in Fe-MgO bulk sample sintered at 900℃ is 50 nm. It can be also seen that the coercivity of bulk sample sintered at 900℃ is still high value of 90 Oe, indicating that the grain growth of magnetic Fe phase during sintering process tend to be suppressed.

• Journal of Electrical Engineering and Technology
• /
• v.5 no.2
• /
• pp.342-351
• /
• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40, 45 and 50 vol. % of zirconium diboride ($ZrB_2$) powders with silicon carbide (SiC) matrix. The SiC-$ZrB_2$ composites and the sintered compacts were produced through spark plasma sintering (SPS) under argon atmosphere, and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via x-ray diffraction (XRD) analysis. The apparent porosity of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were 7.2546, 0.8920, 0.6038, 1.0981, and 10.0108%, respectively. The XRD phase analysis of the sintered compacts demonstrated a high phase of SiC and $ZrB_2$. Among the $SiC+ZrB_2$ composites, the SiC+50vol.%$ZrB_2$ composite had the lowest flexural strength, 290.54MPa, the other composites had more than 980MPa flexural strength except the SiC+30vol.%$ZrB_2$ composite; the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 1011.34MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had positive temperature coefficient resistance (PTCR). The V-I characteristics of the SiC-$ZrB_2$ composites had a linear shape in the temperature range from room to $500^{\circ}C$. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were $4.573\times10^{-3}$, $1.554\times10^{-3}$, $9.365\times10^{-4}$, $6.999\times10^{-4}$, and $6.069\times10^{-4}\Omega{\cdot}cm$, respectively, at room temperature, and their resistance temperature coefficients were $1.896\times10^{-3}$, $3.064\times10^{-3}$, $3.169\times10^{-3}$, $3.097\times10^{-3}$, and $3.418\times10^{-3}/^{\circ}C$ in the temperature range from room to $500^{\circ}C$, respectively. Therefore, it is considered that among the sintered compacts the SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites containing the most outstanding mechanical properties as well as PTCR and V-I characteristics can be used as an energy friendly ceramic heater or ohmic-contact electrode material through SPS.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.4
• /
• pp.138-147
• /
• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.307-313
• /
• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.