• Korean Journal of Materials Research
• /
• v.13 no.5
• /
• pp.285-291
• /
• 2003

The nanosized silver and gold particles are prepared by ERC method in which metal vapors with high temperature is rapidly quenched by coolants such as liquid nitrogen or liquid argon. In order to monitor the crystal structural changes on the internal and the surface of the nanosized noble metal particles, lattice parameter, internal strain and Debye-Waller factor are investigated, and the calculation of X-ray diffraction scattering intensity is performed. The lattice parameters of silver and gold particles agree with those of bulk materials, and crystal internal strain of the metal particles is not changed by rapid cooling. The Debye-Waller factor of gold particles is increased with decreasing particle size because of the surface softening phenomenon of nanosized particles, but the crystal structural change on the surface of the particles is not detected from the comparison the calculated X-ray diffraction profile with the experimental profile on gold particles with the particle size of 4 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.464-466
• /
• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.340-351
• /
• 1995

Electrical, physical and optical properties of Aluminum(Al), Copper(Cu) thin films were investigated in order to establish the optimum sputtering parameters in Liquid Crystal Display (LCD) panel applications. DC-magnetron sputtered film on coming 7059 samples were fabricated with variations of deposition power densities, deposition pressures and substrate temperatures. Low resistivity films(AI;2.80 .mu..ohm.-cm, Cu:1.84 .mu..ohm-cm),which lower than the reported values, were obtained under sputtering parameters of power density(250W), substrate temperature(450-530.deg. C) and 5*10$\^$-3/ Torr deposition pressure. Expected columnar growth and stable grain growth of both films was observed through the Scanning Electron Microscope(SEM) micrographs. Dependency of the applicable defect-free film density upon depositon power and temperature was also characterized. Not too noticable variations in X-ray diffraction patterns were remarked under the alterations of sputtering parameters. High optical reflectivities of Al, Cu films, approximately 70-90 %, showed high degree of surface flatness.

• Nuclear Engineering and Technology
• /
• v.55 no.5
• /
• pp.1885-1891
• /
• 2023

The present work aims to fabricate Na_1+xZr₂Si_xP_3-xO₁₂ compound at various calcination temperatures based on the zircon mineral. The fabricated compound was calcinated at 250, 500, and 1000℃. The effect of calcination temperature on the structure, crystal phase, and radiation shielding properties was studied for the fabricated compound. The X-ray diffraction diffractometer demonstrates that, the monoclinic crystal phase appeared at a calcination temperature of 250℃ and 500℃ is totally transformed to a high-symmetry hexagonal crystal phase under a calcination temperature of 1000℃. The radiation shielding capacity was also qualified for the fabricated compounds using the Monte Carlo N-Particle transport code in the g-photons energy interval between 15keV and 122keV. The impacts of calcination temperature on the g-ray shielding behavior were clarified in the present study, where the linear attenuation coefficient was enhanced by 218% at energy of 122keV, when the calcination temperature increased from 250 to 1000℃, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.620-623
• /
• 2001

The peculiarities of using Self-propagating High-temperature Synthesis (SHS) and solid state phase synthesis for production of high temperature superconductor materials are discussed. Oxide superconductors with general formula $ReBa_2$$Cu_3$$O_{7-x}$ (Re= Y, Yb, Sm, Nd) have been made with using barium oxide initial powder instead of traditional barium carbonate. X-ray powder diffraction showed a single phase orthorhombic perovskite structure was produced in all reactions. Phenomena observed during the grinding of the reactant mixture are presented. Mechano-chemical activation - as a pretreatment of the reactant mixture - strongly influences the kinetic parameters, the reaction mechanism, and the composition and structure of the final product.

• Journal of the Mineralogical Society of Korea
• /
• v.23 no.3
• /
• pp.267-272
• /
• 2010

High pressure x-ray diffraction patterns of ${\alpha}$-cristobalite gallium phosphate ($GaPO_4$) were acquired up to 8.9 GPa at room temperature using Mao-Bell type diamond anvil cell with high flux synchrotron radiation. Starting orthorhombic phase (phase-I) shows the splitting of peak which is possibly resulted from the pressure induced orientation disorder of the framework structure of tetrahedra. This is designated as phase-I'. This phase transforms to the orthorhombic high pressure phase-III between 2 and 3 GPa. Present phase transition sequence is not in accord with the recent high pressure X-ray diffraction results performed on the same starting sample (Ming et al., 2007). X-ray pattern of the unloaded sample to ambient pressure shows that the structure retains that of the high pressure phase prior to decompression.

• Journal of Powder Materials
• /
• v.30 no.3
• /
• pp.233-241
• /
• 2023

In this study, we evaluated the effects of acid leaching on the properties of Cr powder synthesized using self-propagating high-temperature synthesis (SHS). Cr powder was synthesized from a mixture of Cr2O3 and magnesium (Mg) powders using the SHS Process, and the byproducts after the reaction were removed using acid leaching. The properties of the recovered Cr powder were analyzed via X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), particle size analysis (PSA), and oxygen content analysis. The results show that perfect selective leaching of Cr is challenging because of various factors such as incomplete reaction, reaction kinetics, the presence of impurities, and incompatibility between the acid and metal mixture. Therefore, this study provides essential information on the properties under acidic conditions during the production of high-quality Cr powder using a self-propagating high-temperature synthesis method.

• Journal of the Mineralogical Society of Korea
• /
• v.15 no.2
• /
• pp.140-144
• /
• 2002

The sample environment at high temperature for the four circle diffractometer at HANARO in Korea Atomic Energy Research Institute is developed. The performance test was carried out for a structurally known sample through the high temperature experiment with this equipment. In this study we found out that the developed sample environment is stable for a long time experiment at over 900 K. By the neutron diffraction from a single crystal of $LiTaO_3$(phase transition temperature about 900 K) at 298 and 913 K, the lithium atomic positions at both temperatures and disordered state of lithium atom at high temperature were confirmed. These are hardly possible to determine by the conventional X-ray diffraction method.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.76-76
• /
• 1999

Low resistance ohmic contacts to the Si-doped InGaN(~$\times$10$^{19}$ ㎤) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at 95$0^{\circ}C$ for 90s, which results in a specific contact resistance of 2.75$\times$10$^{-8}$ Ω$\textrm{cm}^2$. Interfacial reactions and surface are analyzed using x-ray diffraction, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the InGaN produce a $\beta$-W$_2$N phase at the interface. TEM results also show that the $\beta$-W$_2$N has a rough interface, which increase contact area. It shows that the morphology of the contacts is stable up to a temperature as high as 95$0^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.250-250
• /
• 2011

Zinc oxide (ZnO) structures have great potential in many applications. Currently, the most commonly used method to grow ZnO nanostructres are the vapor transport method (VPT). The morphology of the ZnO structures largely related to the growth conditions, including growth temperature, distance between the substrate and source, and gas ambient. Previously ZnO nanosturecutres with high crystallinity were obtained at the growth temperature of 800$^{\circ}C$, in the argon and oxygen gas ambient. In this study, we report the properties of the ZnO nanostructures, which were synthesized on Au-catalyzed Si substrate by VPT, using a mixture of ZnO and graphite powders as source material under the different condition, including gas ratio of argon/oxygen and distance between substrate and source at the growth temperature of 800$^{\circ}C$. The structural and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL).