• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2019년도 추계 학술논문 발표대회
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• pp.170-171
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• 2019

When the cement paste in concrete is exposed to high temperatures, the mechanical performance decreases due to a series of reactions inside the cement. In this study, we investigated the change of nanostructure of $C_3S$ when $C_3S$ was exposed to high temperature using pair distribution function (PDF) based on high energy X-ray scattering. As a result of X-ray diffraction, there was no significant difference when $C_3S$ was heated at $300^{\circ}C$, but most of $Ca(OH)_2$ was decomposed into CaO at $500^{\circ}C$. In addition, it was confirmed that CaO is dominant in the nanostructure when $C_3S$ is heated to $500^{\circ}C$.

• 한국광물학회지
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• 제9권1호
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• pp.35-42
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• 1996

Polycrystalline ZrH2 in tetragonal crystal system has been compressed in a modified Bassett-type diamond anvil cell up to 36.0 GPa at room temperature. X-ray diffraction data did not indicate any phase transitions at the present pressure range. The pressure dependence of the a-axis, c-axis, c/a and molar volume of ZrH2 was determined at pressures up to 36.0 GPa. Assuming the pressure derivative of the bulk modulus (K0') to be 4.11 from an ultrasonic value on Zr, bulk modulus (K0) was determined to be 160Gpa by fitting the pressure-volume data to the Birch-Murnaghan equation of state. Same sample was heated at $500^{\circ}C$ at the pressure of 9.8 GPa in a modified Sung-type diamond anvil cell. Unloaded and quenched sample revealed that the original tetragonal structure transforms into a hexagonal structured phase with a zero-pressure molar volume change of ~115.5%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.924-925
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• 1999

Bi-system high-$T_c$ superconductors with the nominal composition $(Bi_{0.7}Pb_{0.3})_2-Sr_{2}Ca_{2}Cu_{3}O_{x}$ have been prepared by PJL method. The critical temperature (offset temperature) of the sample annealed for 13 hours in air was 102K. And the results of X-ray diffraction(XRD) patterns, scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) spectra analyses, it was found that PJL method is so effective to reduce the heat treatment period.

• 한국재료학회지
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• 제11권8호
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• pp.661-665
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• 2001

$\sigma$-VFe 금속간화합물에 대한 기계적 합금화(MA) 효과를 중성자 및 X선 회절법으로 조사하였다. MA 분말의 구조분석은 X선 회절(Cu-K$\alpha$) 린 중성자회절(HRPD, λ=1.835$\AA$)을 이용하여 행하였다. $\sigma$-VFe화합물의 MA시 큰 구조변화가 관찰되었으며, MA 60시간의 경우 Fe-Fe 훤자분포는 unit cell에 30개의 원자를 포함하고 있는 $\sigma$상의 tetragonal구조에서 $120^{\circ}C$이상에서 안정하게 존재하는 $\alpha$-(V,Fe) 고용체의 bcc 구조로 상변화함을 알 수 있었다. 또한 $\alpha$-VFe 화합물에 대한 중성자 및 X선 회절패턴의 비교분석을 행하였으며 그 결과 $\sigma$상이 가지는 화학적 규칙성에 기인하는 (101)과 (111) 회절 피크가 중성자 회절에서 뚜렷하게 관찰됨을 알 수 있었다.

• Carbon letters
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• 제12권4호
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• pp.229-235
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• 2011

Isotactic polyacrylonitrile (PAN) with triad isotacticity of 0.53, which was determined by $^{13}C$ NMR, using dialkylmagnesium as an initiator, was successfully synthesized. Isothermal treatment of iso-PAN was conducted in air at 200, 220, 250 and $280^{\circ}C$. Structural evolutions and chemical changes were studied with Fourier transformation infrared and wide-angle X-ray diffraction during stabilization. A new parameter $CNF={I_{2240cm}}^{-1}/ ({I_{1595cm}}^{-1}+f^*{I_{1595cm}}^{-1})$ was defined to evaluate residual nitrile groups. Crystallinity and crystal size were calculated with X-ray diffraction dates. The results indicated that the nitrile groups had partly converted into a ladder structure as stabilization proceeded. The rate of reaction increased with treatment temperature; crystallinity and crystal size decreased proportionally to pyrolysis temperature. The iso-conversional method coupled with the Kissinger and Flynn-Wall-Ozawa methods were used to determine kinetic parameters via differential scanning calorimetry analysis with different heating rates. The active energy of the reaction was 171.1 and 169.1 kJ/mol, calculated with the two methods respectively and implied the sensitivity of the reaction with temperature.

• 한국진공학회지
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• 제13권4호
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• pp.145-149
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• 2004

RF magnetron sputtering 방법으로 miscut된 기판을 이용해서 양질의 압전 산화물 에피 박막을 제작하였다. 박막은 (001) $SrTiO_3$ 기판 위에 증착되었으며, (100) 방향으로 $0^{\circ}$-$8^{\circ}$의 miscut 각도를 갖는 기판들을 사용했다. $4^{\circ}$이상의 큰 miscut 각도를 갖는 기판 위에 성장된 박막의 경우, x-ray diffraction (XRD) 패턴은 perovskite 상의 순수한 PMN-PT 피크만을 보여 주었으며, wavelength dispersive x-ray fluorescence spectroscopy를 이용해서 분석한 조성비는 stoichiometric한 조성비에 가까운 값을 보여주었다. 반면에, miscut 각도가 없는 기판 위에 증착된 박막의 경우, 2차상인 pyrochlore 상을 포함하는 XRD 패턴을 보여주었다. $8^{\circ}$ 기판 위에 성장된 박막의 경우 실온에서 20$\mu$C/$\textrm{cm}^2$라는 높은 잔류분극 값을 보여주었다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Journal of Electrochemical Science and Technology
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• 제8권3호
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• pp.197-205
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• 2017

Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.