• Journal of Korea Foundry Society
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• v.11 no.3
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• pp.236-244
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• 1991

This paper describes a study of the nucleation and growth of graphite crystal of levitation melted high purity Fe-C-Si alloys with emphasis on hypereutectic composition. Spherulitic graphite was observed to form at high purity alloy and converted to compacted by changing the starting iron from ultra-pure zone refined iron to 99.95 pct electrolitic iron. Residual C-C clusters might be acting as an effective nucleation site for graphite, and sulphur was the element to prevent graphite from nucleating. The graphite morphology changed from compacted to spherulitic as the sulphur content decreased.

• Resources Recycling
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• v.15 no.2 s.70
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• pp.37-44
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• 2006

The total amount of graphite reserves in Korea is about 260 thousand tons. Graphite larks international competitiveness it is mined in only few mines, but recently the demand of portable electronic has increased. Therefore a research for manufacturing domestic high purity graphite is necessary because all of high purity graphite used electrode of 2nd batter depends on expensive importation. A preprocessing level for producing high purity graphite, flotation was conducted using microbubble column machine. In this research $D_{50}=10.314{\mu}m$ sample was used which was produced after grinding 29.50% F.C. primary crushing sample($D_{50}=69.393{\mu}m$) for 20 minutes through attrition mill. As a result using this sample, product above 95% F.C. with recovery over 90% was obtained with only after first stage process through the microbubble column.

• Journal of Korea Foundry Society
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• v.14 no.6
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• pp.520-529
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• 1994

This study describes the influence of the trace amount of sulphur on the nucleation behavior of graphite crystals in high purity Fe-C-Si alloys prepared by levitation melting method. Detailed microstructural analyses of high purity(HP) and sulphur added(HP＋S) samples showed that the nucleation of graphite crystals was prevented by sulphur. With decreasing the sulphur content, the shape of graphite crystals tended to spherulitic, and below 2ppm S, that of graphite crystals was only nodular. The critical cooling rate for the nucleation of griphite crystals was calculated as $1.5{\times}10^3k/s$. It is obvious from this work that residual C-C clusters act as an effective nucleation site for graphite crystals and one of the important role of nodularizing elements is to act as scavenger which removes harmful impurities from the solution.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1309-1310
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• 2006

High-purity and super-hard nano-polycrystalline diamond has been successfully synthesized by direct conversion from high-purity graphite under static pressures above 15 GPa and temperatures above $2300^{\circ}C$. This paper describes research findings on the formation mechanism of nano-structure and on the contributing factor leading to high hardness.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• Carbon letters
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• v.8 no.2
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• pp.91-94
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• 2007

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

• Corrosion Science and Technology
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• v.23 no.1
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• pp.54-63
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• 2024

This work investigated the influence of concentration and applied potential on the characteristics of zinc powder (purity, apparent density, morphology, particle size distribution, and particle zeta potential) produced by the electrochemical process from waste brass. High-purity zinc powder is obtained using selective leaching of industrial brass waste in acidic, neutral, and alkaline solutions. The free immersion method with and without voltage using linear polarization technique is used. In the electrochemical process, hydrochloric acid HCl in three different concentrations (0.1, 0.2, and 0.3) M is used. The time and the distance between the electrodes are set to be 30 min and 3 cm, respectively. It has been found that the percentage purity is 98%, 96%, and 94% for the acidic, neutral, and alkaline solutions, respectively. In addition, the morphology of zinc powder analyzed by SEM was dendritic and mossy. It has been recorded that the purity of zinc increases with the increase of the concentration and applied potential. The highest value of purity for zinc powder was %98.58 in 1000 mV and 0.3M concentration for graphite cathode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.