• 제목/요약/키워드: high pressure device

검색결과 567건 처리시간 0.026초

Experimental investigation of jet pump performance used for high flow amplification in nuclear applications

  • Vimal Kotak;Anil Pathrose;Samiran Sengupta;Sugilal Gopalkrishnan;Sujay Bhattacharya
    • Nuclear Engineering and Technology
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    • 제55권10호
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    • pp.3549-3558
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    • 2023
  • The jet pump can be used in a test device of a nuclear reactor for high flow amplification as it reduces inlet flow requirement and thereby size of the process components. In the present work, a miniature jet pump was designed to meet high flow amplification greater than 3. Subsequently, experiments were carried out using a test setup for design validation and performance evaluation of the jet pump for different parameters. It was observed that a minimum pressure of 0.6 bar (g) was required for the secondary fluid inside the jet pump to ensure cavitation free performance at high amplification. Spacing between the nozzle tip and the mixing chamber entry point had significant effect on the performance of the jet pump. Variation in primary flow, temperature and area ratio also affected the performance. It was observed that at high flow amplification, the analytical solution differed significantly from experimental results due to very large velocities encountered in the miniature size jet pump.

Effect of flap angle on transom stern flow of a High speed displacement Surface combatant

  • Hemanth Kumar, Y.;Vijayakumar, R.
    • Ocean Systems Engineering
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    • 제10권1호
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    • pp.1-23
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    • 2020
  • Hydrodynamic Drag of Surface combatants pose significant challenges with regard to fuel efficiency and exhaust emissions. Stern flaps have been used widely as an energy saving device, particularly by the US Navy (Hemanth et al. 2018a, Hemanth Kumar and Vijayakumar 2018b). In the present investigation the effect of flap turning angle on drag reduction is numerically and experimentally studied for a high-speed displacement surface combatant fitted with a stern flap in the Froude number range of 0.17-0.48. Parametric investigations are undertaken for constant chord length & span and varying turning angles of 5° 10° & 15°. Experimental resistance values in towing tank tests were validated with CFD. Investigations revealed that pressure increased as the flow velocity decreased with an increase in flap turning angle which was due to the centrifugal action of the flow caused by the induced concave curvature under the flap. There was no significant change in stern wave height but there was a gradual increase in the stern wave steepness with flap angle. Effective length of the vessel increased by lengthening of transom hollow. In low Froude number regime, flow was not influenced by flap curvature effects and pressure recovery was marginal. In the intermediate and high Froude number regimes pressure recovery increased with the flap turning angle and flow velocity.

탄소성해석을 이용한 파열판의 파열예측 (Rupture Prediction of the Rupture Disk Using Elasto-Plastic Analysis)

  • 한혁섭;이원복;구송회;이방업
    • 한국추진공학회지
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    • 제16권3호
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    • pp.49-56
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    • 2012
  • 파열판은 고압장치에서 안전장치로써 사용하고 있으며, 추진기관에서는 파열을 임의로 제어하기 위한 장치로써 사용한다. 본 논문은 파열판의 파열압력 시험결과와 유한요소해석 결과를 비교하기 위한 것이다. 본 논문에서는 AISI 316L을 이용하여 제작한 파열판의 파열시험을 수행하였으며, 탄소성 물성치와 진 응력-변형률 관계의 다양한 가정을 이용하여 파열판의 파열압력을 계산하였다. 파열시험과 탄소성해석 결과를 통하여 파열판의 크기에 대한 파열압력의 변화를 확인하였다. 시험과 유한요소해석을 통해 파열압력은 파열판의 크기에 의존하며, 탄소성해석을 수행한 결과 다중 선형 응력-변형률 선도만이 의미있는 예측치를 계산할 수 있었다. 파열시험을 통하여 파열판의 크기에 따라 파열위치가 다르다는 것을 확인할 수 있었다. 시험과 해석 결과는 파열판의 크기 변화를 통하여 파열판의 파열압력을 제어하기 위해 사용할 수 있다.

전도성 다공성 구조 압력감지소자 (Pressure Sensitive Device Using Conductive and Porous Structures)

  • 소혜미;박철민;장원석
    • 대한기계학회논문집B
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    • 제38권7호
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    • pp.601-605
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    • 2014
  • 일반적으로 표면적/부피비가 큰 전도성 다공체는 수퍼캐패시터의 전극이나 흡수제, 유연히터 등의 다양한 분야에 적용되어 왔다. 본 논문에서는 이러한 전도성 다공성 구조의 역학적 전기적 특성을 이용하여 고감도 압력센서를 구현하였다. 탄소나노튜브 용액에 스펀지를 적셔 다공체에 전도성을 부여하였으며, 압력에 따른 전도성 다공체의 저항 변화를 측정하였다. 전도성 스펀지에 압력이 가해졌을때, 각각의 탄소나노튜브들은 서로 맞붙게 되어 저항이 최대 20%까지 줄어듦을 확인하였다. 부드럽고 탄성력이 뛰어난 탄소나노튜브 스폰지는 반복적인 압축실험에도 모양의 변형 없이 매우 빠르게 안정화되고 일정한 저항변화를 확인할 수 있었다. 또한 스펀지 압력소자를 유연소자에 적용하기 위하여 탄소나노튜브 트랜지스터와 연결하여 외부압력에 따른 전기적 특성변화를 측정하였다.

TCNQ 분자를 이용한 유기 발광 소자의 전기적 특성 (Electrical Properties of Organic Light-emitting Diodes Using TCNQ Molecules)

  • 나수환;김태완
    • 한국전기전자재료학회논문지
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    • 제23권11호
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    • pp.896-900
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    • 2010
  • Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

고전압 Field Stop IGBT의 최적화 설계에 관한 연구 (The Optimal Design of High Voltage Field Stop IGBT)

  • 안병섭;장란향;류용;강이구
    • 한국전기전자재료학회논문지
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    • 제28권8호
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    • pp.486-489
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    • 2015
  • Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.

COMPUTATIONAL STUDY OF THE DRIVER GAS COMPRESSION PROCESS IN THE BALLISTIC RANGE

  • Rajesh, G.;Kang, H.G.;Kim, H.D.
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.2775-2780
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    • 2007
  • The ballistic range has long been employed in a variety of engineering fields such as high-speed impact engineering, projectile aerodynamics and aeroballistics, since it can create very high-pressure states in a short time. Since the operation of the ballistic range includes many complicated processes, each should be studied in detail for the best operation of the device. One of the main processes which have a major influence in its operation is the compression of the driver gas. Most of the studies available in this field hardly discuss this process in detail and thus lack a proper understanding of its effect. In the present study, a computational analysis has been made to investigate the compression process in the pump tube of a ballistic range. The results obtained are validated with some experimental data. It is seen that the pump tube parameters and the piston mass significantly affect the compression process and the time to build up the required diaphragm rupture pressure.

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Fabrication of High Break-down Voltage MIM Capacitors for IPD Applications

  • Wang, Cong;Kim, Nam-Young
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.241-241
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    • 2009
  • For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

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Flexible Plasma Sheets

  • Cho, Guangsup;Kim, Yunjung
    • Applied Science and Convergence Technology
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    • 제27권2호
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    • pp.23-25
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    • 2018
  • With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

환원된 산화 그래핀을 이용한 레이저 유도초음파의 64배 압력 상승 및 40dB 세기 상승 (Laser induced ultrasound generation via reduced graphene oxide coated aluminum transmitter)

  • 이석환;박미애;여재익
    • 한국레이저가공학회지
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    • 제15권4호
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    • pp.1-5
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    • 2012
  • We demonstrate that reduced graphene oxide (rGO) coated thin aluminum film is an effective optoacoustic transmitter for generating high pressure and high frequency ultrasound previously unattainable by other techniques. The rGO layer of different thickness is deposited between a 100 nm-thick aluminum film and a glass substrate. Under a pulsed laser excitation, the transmitter generates enhanced optoacoustic pressure of 64 times the aluminum-alone transmitter. A promising optoacoustic wave generation is possible by optimizing thermoelasticity of metal film and thermal conductivity of rGO in the proposed transmitter for laser-induced ultrasound (LIUS) applications.

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