• 공학기술논문지
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• 제11권4호
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• pp.267-271
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• 2018

A high-frequency therapy device with improved output by modifying a high-frequency stimulator was fabricated. The details of the design include generating part design, high-frequency transformer design, large output FET installation, DC voltage input part design and gate input driver design. Based on the real test using the pork meat, the temperature distributions according to the current electric transfer method, penetration depth, electrode diameter size were measured. In the CET method, the penetration depth was 0.5 cm and in the RET method, the penetration depth was 20 cm or more. In addition, it was confirmed that the temperature rise according to the penetration depth in the RET system was substantially constant, and the temperature rise was remarkable as the electrode diameter was small. As a result, it has been confirmed that the high frequency therapy device is highly affected by various conditions of the electrode.

• 전자공학회논문지
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• 제51권4호
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• pp.49-58
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• 2014

본 논문에서는 저전력 고속 모바일 I/O 인터페이스를 위한 저스윙 차동 니어-그라운드 시그널링 (NGS) 트랜시버를 소개한다. 제안하는 트랜스미터는 온-칩 레귤레이터로 정류된 프로그래머블한 스윙을 가지는 전압-모드 드라이버와 비대칭 상승/하강시간을 가지는 전단드라이버를 사용한다. 제안하는 리시버는 고주파이득을 신장시키는 피드-포워드 커패시터를 이용한 새로운 다중경로이득 차동앰프를 사용한다. 또한, 이 리시버는 가변적인 트랜스미터 출력스윙에 의한 입력 공통모드 변화를 보상하며, 리시버 입력단 증폭기의 전류 미스매치를 최소화하기 위하여 새로운 적응형 바이어스 생성기를 포함한다. 트랜스미터와 리시버에 적용된 새로운 간단하고 효과적인 임피던스 매칭 기술들의 사용으로 우수한 시그널 인테그리티와 높은 파워 효율을 이뤄냈다. 65 nm CMOS 공정으로 설계된 제안하는 트랜시버는 10 cm 길이의 FR4 PCB에서 채널당 13 Gbps의 전송속도와 0.3 pJ/bit (= 0.3 mW/Gbps)의 높은 파워 효율을 갖는다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.1-5
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• 2002

The sustain driver for AC plasma display panel should provide alternating high voltage pulses to ignite plasma and recover the energy discharged from the intrinsic capacitance between the scanning and sustaining electrodes inside the panel. In this paper, an efficient sustain circuit employing boost-up function is proposed to achieve a faster rise-time in order to be suitable to widely used the address display period separated (ADS) driving method. The proposed circuit improves the recovery efficiency, regardless of the variation of the panel capacitance. The principle of operation, features, and simulated results are illustrated and verified on a 7.5-inch diagonal panel at 200 [kHz] operating frequency based on experimental prototype.

• 대한인간공학회지
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• 제35권5호
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• pp.371-381
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• 2016

Objective:This study aims to evaluate the features of heart rate variability (HRV) and respiratory signals as indices for a driver's drowsiness and waking status in order to develop the classification model for a driver's drowsiness and waking status using those features. Background: Driver's drowsiness is one of the major causal factors for traffic accidents. This study hypothesized that the application of combined bio-signals to monitor the alertness level of drivers would improve the effectiveness of the classification techniques of driver's drowsiness. Method: The features of three heart rate variability (HRV) measurements including low frequency (LF), high frequency (HF), and LF/HF ratio and two respiratory measurements including peak and rate were acquired by the monotonous car driving simulation experiments using the photoplethysmogram (PPG) and respiration sensors. The experiments were repeated a total of 50 times on five healthy male participants in their 20s to 50s. The classification model was developed by selecting the optimal measurements, applying a binary logistic regression method and performing 3-fold cross validation. Results: The power of LF, HF, and LF/HF ratio, and the respiration peak of drowsiness status were reduced by 38%, 22%, 31%, and 7%, compared to those of waking status, while respiration rate was increased by 3%. The classification sensitivity of the model using both HRV and respiratory features (91.4%) was improved, compared to that of the model using only HRV feature (89.8%) and that using only respiratory feature (83.6%). Conclusion: This study suggests that the classification of driver's drowsiness and waking status may be improved by utilizing a combination of HRV and respiratory features. Application: The results of this study can be applied to the development of driver's drowsiness prevention systems.

• ETRI Journal
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• 제27권2호
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Journal of Information Display
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• 제13권2호
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• pp.73-82
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• 2012

In this paper, a light-emitting diode (LED) backlight driver integrated circuit (IC) for medium-sized liquid crystal displays (LCDs) is proposed. In the proposed IC, a linear current regulator with matched internal resistors and an adaptive phase-shifted pulse-width modulation (PWM) dimming controller are also proposed to improve LED current uniformity and reliability. The double feedback loop control boost converter is used to achieve high power efficiency, fast transient characteristic, and high dimming frequency and resolution. The proposed IC was fabricated using the 0.35 ${\mu}m$ bipolar-CMOS-DMOS (BCD) process. The LED current uniformity and LED fault immunity of the proposed IC were verified through experiments. The measured power efficiency was 90%; the measured LED current uniformity, 97%; and the measured rising and falling times of the LED current, 86 and 7 ns, respectively. Due to the fast rising and falling characteristics, the proposed IC operates up to 39 kHz PWM dimming frequency, with an 8-bit dimming resolution. It was verified that the phase difference between the PWM dimming signals is changed adaptively when LED fault occurs. The experiment results showed that the proposed IC meets the requirements for the LED backlight driver IC for medium-sized LCDs.

• 대한전자공학회논문지SD
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• 제39권2호
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• pp.1-6
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• 2002

본 논문에서는 UXGA(Ultra extended Graphics Array)급 TFT LCD Driver를 지원하는 Analog Flat Panel Interface(AFPI)용 Module을 설계하였다. 제안하는 AFPI는 8-b ADC, 자동이득 제어기(AGC), 저잡음 PLL로 구성 되어있다. 8-b ADC는 고속동작과 저전력 기능을 위한 새로운 구조로서 FR(Folding Rate)이 8, NFB(Number of Folding Block)이 2, Interpolation rate이 16이며, 분산 Track and Hold구조를 사용하여 Sampling시 입력주파수를 낮추어 높은 SNDR을 얻을 수 있었다. 또한 Gain과 Clamp을 통제 할 수 있는 Programmable한 AGC, 낮은 Jitter Noise PLL을 설계하였다. 제안된 Module은 0.2㎛, 1-Poly 5-Metal, n-well CMOS공정을 사용하여 제작되었으며, 유효 칩 면적은 3.6mm × 3.2mm이고 602㎽의 전력소모를 나타내었다. 입력 주파수는 10㎒, 샘플링 주파수 200㎒에서의 INL과 DNL은 ±1LSB 이내로 측정되었으며, SNDR은 43㏈로 측정되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.463-464
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• 2008

As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

• 한국광학회지
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• 제20권2호
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• pp.65-70
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• 2009

본 논문에서는 높은 입력 임피던스를 가지는 테라헤르츠 Yagi-Uda 안테나를 제안하였다. 제안된 Yagi-Uda 안테나는 두께가 얇은 기판 위에 설계하여 기판의 비유전율에 의한 안테나의 임피던스 저하를 줄이고 Yagi-Uda 안테나 고유의 복사패턴을 가지도록 하였다. 전 파장 길이를 가지는 U-형태의 다이폴을 driver로 사용하여 공진주파수에서 $4,400{\Omega}$ 정도의 높은 입력저항을 얻을 수 있었다. 따라서 제안된 Yagi-Uda 안테나는 기존의 테라헤르츠 안테나들에 비하여 증가된 테라헤르츠파 출력을 얻을 수 있다.