• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.108-111
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• 2011

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.

• Advances in materials Research
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• v.5 no.3
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• pp.181-192
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• 2016

In this work effect of high energy milling on the structural and electrical properties of $Ba(Fe_{1/2}Ta_{1/2})O_3$ (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<$2{\mu}m$) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ${\varepsilon}^{\prime}-value$ and reduction in $tg{\delta}-value$) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.415-415
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• 2013

We have investigated the optical and electrical properties of the CIGS thin film solar cells by the electroreflectance (ER), photoreflectance (PR), photoluminescence (PL), and photocurrent (PC) spectroscopies at room temperature. The ER spectrum had two narrow signal regions and one broad signal region. We measured PL and PC to confirm the signals at low energy region (1.02~1.35 eV), so these signals are related to the CIGS thin film, and the high energy region (2.10~2.52 eV) is related to the CdS bandgap energy. The broad signal region (1.35~2.09 eV) is due to the internal electric field by the p-n junction from the comparison between PR and ER spectra, and we calculated the internal electric field by the p-n junction. In the high efficiency solar cell, the CdS signal of ER spectrum is narrower than the lower efficiency solar cells.

• Journal of Radiation Protection and Research
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• v.33 no.2
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• pp.53-59
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• 2008

We observed DNA damages as a function of mean absorbed dose to identify the indirect effect of high-energy radiation such as x-ray. Monolayer films of lyophilized pGEM-3Zf(-) plasmid DNA deposited on tantalum foils were exposed to Al $K{\alpha}$ X-ray (1.5 keV) for 0, 3, 7 and 10 min, respectively, in a condition of ultrahigh vacuum state. We compared DNA damages by X-ray irradiation with those by 3 eV electron irradiation. X-ray photons produced low-energy electrons (mainly below 20 eV) from the tantalum foils and DNA damage was induced chiefly by these electrons. For electron beam irradiation, DNA damage was directly caused by 3 eV electrons. Irradiated DNA was analyzed by agarose gel electrophoresis and quantified by ImagaQuant program. The quantities of remained supercoiled DNA after irradiation were linearly decreased as a function of mean absorbed dose. On the other hand, the yields of nicked circular (single strand break, SSB) and interduplex crosslinked form 1 DNA were linearly increased as a function of mean absorbed dose. From this study, it was confirmed that DNA damage was also induced by low energy electrons ($0{\sim}10\;eV$) even below threshold energies for the ionization of DNA.

• 한국연소학회:학술대회논문집
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• 2007.05a
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• pp.27-30
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• 2007

We have been setting up experiments on propagation of shock waves generated by the pulsed laser ablation. One side of a thin metal foil is subjected to laser ablation as a shock wave is generated from a localized spot of high intensity energy source. The resulting reactive shock wave, which penetrates through the foil is reflected by an acoustic impedance which causes the metal foil to high-strain rate deform. This short time physics is captured on an ICCD camera. The focus of our research is generating reactive shock wave and high strain rate deforming of thin metal foil for accelerating micro-particles to a very high speed on the orders of several thousand meter per second. Somce innovative applications of this device will be discussed.

• Journal of Electrochemical Science and Technology
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• v.9 no.2
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• pp.126-132
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• 2018

For the first time, an innovative approach using P(VDF-TrFE) as a polymer electrolyte for high efficiency, all-solid-state supercapacitors is presented. The polymer electrolyte was successfully achieved by dissolving P(VDF-TrFE) copolymers in dimethylformamide (DMF). Thermal analysis and infrared spectroscopy revealed excellent thermal stability up to $400^{\circ}C$ and copolymer's interaction with DMF. Electrochemical capacitors fabricated using P(VDF-TrFE) in DMF and ZnO NWs demonstrated high capacitive performance. Furthermore, the gel electrolyte-based supercapacitors demonstrated excellent mechanical durability up to a bend angle of $120^{\circ}$. Novel P(VDF-TrFE) electrolytes could be a promising approach for applications in flexible, fabric-based, and high-efficiency energy devices.

• Journal of computational fluids engineering
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• v.15 no.3
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• pp.9-15
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• 2010

In this study, we calculated arc discharges and flow characteristics driven by arcs in a thermal puffer chamber, which is one of most outstanding high-voltage interrupters, for understanding the complex physics and the probability of thermal breakdown. The four main parts of arc model for this virtual-reality are radiation, PTFE ablation, Cu evaporation, and turbulence. Among these important parts the turbulence model can be critical to the reliability of computation results during the whole arcing history because the plasma flow is affected by high heat energy and mass momentum. Two turbulence models, the Prandtl's mixing length model and the standard $k-\varepsilon$ model, are applied for these calculations and are compared with pressure-rise inside chamber and arc voltage between the contacts as well as flow characteristics near current zero.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.41-47
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• 2016

Purpose: The purpose of this study was to evaluate electrical and structural degradation of flexible CIGS sollar cell exposed to high temperature and humid atmosphere. Method: Accelerated degradation was performed for various time under $85^{\circ}C/85%RH$ and then electrical and structural properties were analyzed by 4-point probe method, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Results: Sheet resistance of the top ITO layer increased with exposure time to the high temperature and humid atmosphere. Blunting of the protrusion morphology of ITO layer was observed for the degraded specimen, while no phase change was detected by XRD. Oxygen was detected at the edge area after 300 hours of exposure. Conclusion: Increase in electrical resistance of the degraded CIGS solar cell under high temperature and humid environment was attribute to the oxygen or water absorption.

• Journal of The Korean Astronomical Society
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• v.49 no.1
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• pp.25-35
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• 2016

Multiple color selection techniques are successful in identifying quasars from wide-field broadband imaging survey data. Among the quasars that have been discovered so far, however, there is a redshift gap at 5 ≲ z ≲ 5.7 due to the limitations of filter sets in previous studies. In this work, we present a new selection technique of high redshift quasars using a sequence of medium-band filters: nine filters with central wavelengths from 625 to 1025 nm and bandwidths of 50 nm. Photometry with these medium-bands traces the spectral energy distribution (SED) of a source, similar to spectroscopy with resolution R ~ 15. By conducting medium-band observations of high redshift quasars at 4.7 ≤ z ≤ 6.0 and brown dwarfs (the main contaminants in high redshift quasar selection) using the SED camera for QUasars in EArly uNiverse (SQUEAN) on the 2.1-m telescope at the McDonald Observatory, we show that these medium-band filters are superior to multi-color broad-band color section in separating high redshift quasars from brown dwarfs. In addition, we show that redshifts of high redshift quasars can be determined to an accuracy of Δz/(1 + z) = 0.002 - 0.026. The selection technique can be extended to z ~ 7, suggesting that the medium-band observation can be powerful in identifying quasars even at the re-ionization epoch.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.154.2-154.2
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• 2016

In this work, we introduce a solution-processed CdS interlayer for use in inverted bulk heterojunction (BHJ) solar cells, and compare this material to a series of standard organic and inorganic cathode interlayers. Different combinations of solution-processed CdS, ZnO and conjugated polyelectrolyte (CPE) layers were compared as cathode interlayers on ITO substrates to construct inverted solar cells based on $PTB7:PC_{71}BM$ and a $P3HT:PC_{61}BM$ as photoactive layers. Introduction of a CdS interlayer significantly improved the power conversion efficiency (PCE) of inverted $PTB7:PC_{71}BM$ devices from 2.0% to 4.9%, however, this efficiency was still fairly low compared to benchmark ZnO or CPE interlayers due to a low open circuit voltage ($V_{OC}$), stemming from the deep conduction band energy of CdS. The $V_{OC}$ was greatly improved by introducing an interfacial dipole (CPE) layer on top of the CdS layer, yielding outstanding diode characteristics and a PCE of 6.8%. The best performing interlayer, however, was a single CPE layer alone, which yielded a $V_{OC}$ of 0.727 V, a FF of 63.2%, and a PCE of 7.89%. Using $P3HT:PC_{61}BM$ as an active layer, similar trends were observed. Solar cells without the cathode interlayer yielded a PCE of 0.46% with a poor $V_{OC}$ of 0.197 V and FF of 34.3%. In contrast, the use of hybrid ZnO/CPE layer as the cathode interlayer considerably improved the $V_{OC}$ of 0.599 V and FF of 53.3%, resulting the PCE of 2.99%. Our results indicate that the CdS layer yields excellent diode characteristics, however, performs slightly worse than benchmark ZnO and CPE layers in solar cell devices due to parasitic absorption below 550 nm. These results suggest that the hybrid inorganic/organic interlayer materials are promising candidates as cathode interlayers for high efficiency inverted solar cells through the modification of interface contacts.