• 제목/요약/키워드: high energy electron

검색결과 1,463건 처리시간 0.03초

A Study of Dark Photon at the Electron-Positron Collider Experiments Using KISTI-5 Supercomputer

  • Park, Kihong;Cho, Kihyeon
    • Journal of Astronomy and Space Sciences
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    • 제38권1호
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    • pp.55-63
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    • 2021
  • The universe is well known to be consists of dark energy, dark matter and the standard model (SM) particles. The dark matter dominates the density of matter in the universe. The dark matter is thought to be linked with dark photon which are hypothetical hidden sector particles similar to photons in electromagnetism but potentially proposed as force carriers. Due to the extremely small cross-section of dark matter, a large amount of data is needed to be processed. Therefore, we need to optimize the central processing unit (CPU) time. In this work, using MadGraph5 as a simulation tool kit, we examined the CPU time, and cross-section of dark matter at the electron-positron collider considering three parameters including the center of mass energy, dark photon mass, and coupling constant. The signal process pertained to a dark photon, which couples only to heavy leptons. We only dealt with the case of dark photon decaying into two muons. We used the simplified model which covers dark matter particles and dark photon particles as well as the SM particles. To compare the CPU time of simulation, one or more cores of the KISTI-5 supercomputer of Nurion Knights Landing and Skylake and a local Linux machine were used. Our results can help optimize high-energy physics software through high-performance computing and enable the users to incorporate parallel processing.

Empirical relationship between band gap and synthesis parameters of chemical vapor deposition-synthesized multiwalled carbon nanotubes

  • Obasogie, Oyema E.;Abdulkareem, Ambali S.;Mohammed, Is'haq A.;Bankole, Mercy T.;Tijani, Jimoh. O.;Abubakre, Oladiran K.
    • Carbon letters
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    • 제28권
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    • pp.72-80
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    • 2018
  • In this study, an empirical relationship between the energy band gap of multi-walled carbon nanotubes (MWCNTs) and synthesis parameters in a chemical vapor deposition (CVD) reactor using factorial design of experiment was established. A bimetallic (Fe-Ni) catalyst supported on $CaCO_3$ was synthesized via wet impregnation technique and used for MWCNT growth. The effects of synthesis parameters such as temperature, time, acetylene flow rate, and argon carrier gas flow rate on the MWCNTs energy gap, yield, and aspect ratio were investigated. The as-prepared supported bimetallic catalyst and the MWCNTs were characterized for their morphologies, microstructures, elemental composition, thermal profiles and surface areas by high-resolution scanning electron microscope, high resolution transmission electron microscope, energy dispersive X-ray spectroscopy, thermal gravimetry analysis and Brunauer-Emmett-Teller. A regression model was developed to establish the relationship between band gap energy, MWCNTs yield and aspect ratio. The results revealed that the optimum conditions to obtain high yield and quality MWCNTs of 159.9% were: temperature ($700^{\circ}C$), time (55 min), argon flow rate ($230.37mL\;min^{-1}$) and acetylene flow rate ($150mL\;min^{-1}$) respectively. The developed regression models demonstrated that the estimated values for the three response variables; energy gap, yield and aspect ratio, were 0.246 eV, 557.64 and 0.82. The regression models showed that the energy band gap, yield, and aspect ratio of the MWCNTs were largely influenced by the synthesis parameters and can be controlled in a CVD reactor.

Change in Water Contact Angle of Carbon Contaminated TiO2 Surfaces by High-energy Electron Beam

  • Kim, Kwang-Dae;Tai, Wei Sheng;Kim, Young-Dok;Cho, Sang-Jin;Bae, In-Seob;Boo, Jin-Hyo;Lee, Byung-Cheol;Yang, Ki-Ho;Pack, Ok-Kyung
    • Bulletin of the Korean Chemical Society
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    • 제30권5호
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    • pp.1067-1070
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    • 2009
  • We studied change in water contact angle on $TiO_2$ surfaces upon high-energy electron-beam treatment. Depending on conditions of e-beam exposures, surface OH-content could be increased or decreased. In contrast, water contact angle continuously decreased with increasing e-beam exposure and energy, i.e. change in the water contact angle cannot be rationalized in terms of the overall change in the surfacestructure of carbon-contaminated $TiO_2$. In the C 1s spectra, we found that the C-O and C=O contents gradually increased with increasing e-beam energy, suggesting that the change in the surface structure of carbon layers can be important for understanding of the wettability change. Our results imply that the degree of oxidation of carbon impurity layers on oxide surfaces should be considered, in order to fully understand the change in the oxide surface wettability.

Effect of Improving Accuracy for Effective Atomic number (EAN) and Relative Electron Density (RED) extracted with Polynomial-based Calibration in Dual-energy CT

  • Daehong Kim;Il-Hoon Cho;Mi-jo Lee
    • 한국방사선학회논문지
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    • 제17권7호
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    • pp.1017-1023
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    • 2023
  • The purpose of this study was to improve the accuracy of effective atomic number (EAN) and relative electron density (RED) using a polynomial-based calibration method using dual-energy CT images. A phantom composed of 11 tissue-equivalent materials was acquired with dual-energy CT to obtain low- and high-energy images. Using the acquired dual-energy images, the ratio of attenuation of low- and high-energy images for EAN was calibrated based on Stoichiometric, Quadratic, Cubic, Quartic polynomials. EAN and RED were extracted using each calibration method. As a result of the experiment, the average error of EAN using Cubic polynomial-based calibration was minimum. Even in the RED image extracted using EAN, the error of the Cubic polynomial-based RED was minimum. Cubic polynomial-based calibration contributes to improving the accuracy of EAN and RED, and would like to contribute to accurate diagnosis of lesions in CT examinations or quantification of various materials in the human body.

Analysis of Intramolecular Electron Transfer in A Mixed-Valence Cu(Ⅰ)-Cu(Ⅱ) Complex Using the PKS Model

  • So Hyunsoo
    • Bulletin of the Korean Chemical Society
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    • 제13권4호
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    • pp.385-388
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    • 1992
  • The transition probabilities for the thermal intramolecular electron transfer and the optical intervalence transfer band for a symmetric mixed-valence Cu(I)-Cu(II) compound were used to extract the PKS parameters $\varepsilon$ = -1.15, ${\lambda}$ = 2.839, and ${\nu}g$- = 923 $cm^{-1}$. These parameters determine the potential energy surfaces and vibronic energy levels. Three pairs of vibrational levels are below the top of the energy barrier in the lower potential surface. The contribution of each vibrational state to the intramolecular electron transfer was calculated. It is shown that the three pairs of vibrational states below the top of the barrier are responsible for most of the electron transfer at 261-306 K. So the intramolecular electron transfer in this system is a tunneling process. The transition probability exhibits the usual high-temperature Arrhenius behavior, but at lower temperature falls off to a temperature-independent value as tunneling from the lowest levels becomes the limiting process.

정전 탐침법과 유체 시뮬레이션을 이용한 유도결합 Ar 플라즈마의 특성 연구 (Analysis of Inductively Coupled Plasma using Electrostatic Probe and Fluid Simulation)

  • 차주홍;이호준
    • 전기학회논문지
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    • 제65권7호
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    • pp.1211-1217
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    • 2016
  • Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

초고진공 전자 사이클로트론 화학 기상 증착 장치에 의한 저온 실리콘 에피 성장에 기판 DC 바이어스가 미치는 영향 (The Effect of Substrate DC Bias on the Low -Temperature Si homoepitaxy in a Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition)

  • 태흥식;황석희;박상준;윤의준;황기웅;송세안
    • 한국진공학회지
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    • 제2권4호
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    • pp.501-506
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    • 1993
  • The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma $_strate boundary along themagnetric field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below $560^{\circ}C$) is examine dby in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM),plan-view TEM and high resolution transmision electron microscopy(HRTEM). While the polycrystalline silicon layers are grow withnegative substrate biases, the single crystaline silicon layers are grown with negative substrate biases, the singel crystalline silicon layers are grown with positive substrate biases. As the substrate bias changes form negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below $560^{\circ}C$ by UHV-ECRCVD.VD.

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고에너지 전자빔을 이용하여 저궤도 인공위성의 실리콘 태양센서의 내방사선 특성 연구 (A study on the radiation effect of silicon solar cells in a low Earth orbit satellite by using high energy electron beams)

  • 정성인;이재진;이흥호
    • 대한전자공학회논문지SD
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    • 제45권3호
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    • pp.1-5
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    • 2008
  • 본 논문은 고에너지 전자빔을 이용하여 저궤도 인공위성의 실리콘 태양센서의 내방사선 특성 변화를 분석하였다. 일반적으로 저궤도를 선회하는 위성은 반알렌대를 통과하며, 이 안에서 주기적인 운동으로 남극과 북극을 이동하는 하전입자에 의해 전자부품이 쉽게 손상되고 수명이 단축되는 등 악 영향을 받고 있다. 특히 방사선에 의한 SEU (Single Event Upset) 등은 인공위성에 탑재된 반도체 소자의 오동작 유발의 원인이 되고 있다. 본 논문은 한국원자력 연구원의 고에너지 ($300keV{\sim}1MeV$) 전자빔 조사장치를 이용하여 태양전지에 전자빔을 조사하고 이 때 변화되는 각각의 파라미터들에 대한 값을 측정하고자 한다. 이러한 연구는 저궤도 인공위성에서 전력을 생산하기 위해서 사용하는 전력용 태양 전지의 방사능 영향을 이해하는 데도 많은 영향을 줄 수 있을 것으로 기대된다.

Fabrication of carbon nanotube electron beam (C-beam) for thin film modification

  • Kang, Jung Su;Lee, Su Woong;Lee, Ha Rim;Chung, Min Tae;Park, Kyu Chang
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.171.1-171.1
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    • 2015
  • Carbon nanotube emitters is very promising electron emitter for electron beam applications. We introduced the carbon nanotube electron beam (C-beam) exposure technic using triode structure. As a source, the electron beam emit from CNT emitters placed at the cathode by high electric field. Through the gate mesh, with high accelerating energy, the electron can be extracted easily and impact at the anode plate. For thin film modification, after the C-beam exposure on the amorphous silicon thin film, we found phase changes and it showed a high crystallinity from the Raman measurement. We expect that this crystallized film will be a good candidate as a new active layer of TFT.

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Reflection High Energy Electron Diffraction이 결합된 Laser Molecular Beam Epitaxy System에서 $BaTiO_3/SrTiO_3$ 산화물 인공격자의 Layer-by-Layer 성장 (Atomic Layer-by-Layer Growth of $BaTiO_3/SrTiO_3$ Oxide Artificial Lattice in Laser Molecular Beam Epitaxy System Combined Reflection High Energy Electron Diffraction)

  • 이창훈;김이준;전성진;김주호;최택집;이재찬
    • 한국세라믹학회:학술대회논문집
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    • 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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    • pp.179.2-179
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    • 2003
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