• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.252-255
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• 1996

Superconducting current lead is one of the promising applications of the oxide high-Tc superconductors, because they have the advantage of decreasing heat conduction to low temperature region, comparing with a conventional cooper alloy lead. High critical current density is a key factor for the applications such as current lead. (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$\_$x/ high Tc superconductor haute been investigated in terms of critical current density. Bi-2223 superconducting current lead made by CIP and solid state sintering process. Bi-2223 current lead that heat treated at 836$^{\circ}C$ for 240 h in 1/13 P$\_$O$_2$/ had over 150 A/$\textrm{cm}^2$ of critical current density at 77K. We knew that the superconducting properties of tube type current leads were better than rods type of them. And we investigated the relation of Bi-2223 formation and heat treatment condition by XRD and SEM analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.9-10
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• 2005

Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.365-368
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• 2000

We have studies on the Microstructures and densities as a function of forming pressures and the magnetic properties of the specimens with additive Bi$_2$O$_3$ that sintered at 95$0^{\circ}C$ for 4.5 hours for synthesizing optimal Ni-Cu-Zn ferrite. Green density rose generally as Forming pressure increased from 1.7 ton/cm$^2$to 2.5 ton/cm$^2$and Cold Isostatic Pressure(CIP) method was more effective than Die Pressure(DP) method to high green density. Forming pressure had no influence on apparent density but on the other hand Bi$_2$O$_3$contents were strongly dominant to appaernt density than forming pressure. Bi$_2$O$_3$liquid phases created during sintering process promoted sintering and grain growth so that apparent density, grain size and permeability increased compared to that of the specimens which were sintered with non-additive Bi$_2$O$_3$.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.273-278
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• 2023

In this study, based on the saturation magnetic flux density experimental values (B_s) of 622 Fe-based bulk metallic glasses (BMGs), regression models were applied to predict B_s using artificial neural networks (ANN), and prediction performance was evaluated. Model performance evaluation was investigated by using the F1 score together with the coefficient of determination (R² score), which is mainly used in regression models. The coefficient of determination can be used as a performance indicator, since it shows the predicted results of the saturation magnetic flux density of full material datasets in a balanced way. However, the BMG alloy contains iron and requires a high saturation magnetic flux density to have excellent applicability as a soft magnetic material, and in this study F1 score was used as a performance indicator to better predict B_s above the threshold value of B_s (1.4 T). After obtaining two ANN models optimized for the R² and F1 score conditions, respectively, their prediction performance was compared for the test data. As a case study to evaluate the prediction performance, new Fe-based BMG datasets that were not included in the training and test datasets were predicted using the two ANN models. The results showed that the model with an excellent F1 score achieved a more accurate prediction for a material with a high saturation magnetic flux density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.52-56
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• 2001

Experiments of 2 type on insulating compounds accomplished to change PVC using in URD(Underground) power cable jacketing. one was DB (Dielectric Breakdown) test on the pure base resins and the others were WVT(Water Vapor Transmission) test on the compounds which contained C/B(Carbon Black), anti-oxidant to base resin. a kind of specimens made by pressing to resin of pellet or lump form was HDPE(High Density Polyethylene), MDPE(Medium Density Polyehylene), LDPE(Low Density Polyethylene), LLDPE(Linear Low Density Polyethylene), PVC (Polyvinyl Chloride). As a results of AC DB and WVT test, we saw that strength of Insulation was HDPE > LLDPE ≒ MDPE > LDPE and WVT ratio was HDPE < LLDPE < MDPE < LLDPE ≒ LDPE${\ll}$PVC. WVT of PVC using for jacket showed characteristic 15 times more than MDPE or LLDPE. Therefore, to development of watertightness cable, our works present need of Changing in insulating materials

• Design & Manufacturing
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• v.14 no.1
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• pp.56-62
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• 2020

An electron beam was used to mainly utilize for polishing, finishing, welding, a lithography process, etc. Due to the high technical level of difficulty of high-power density electron beam, it is difficult to secure related technologies. In this study, research was carried out to improve the machinability by developing the vaporized amplification sheets to realize the electron beam drilling technology. Their vaporized amplification sheets were analyzed by using the measurement of chemical and composition, which is such as TGA, SEM. We analyzed micro-hole processing using a microscope. Also, the thermal characteristics of vaporized amplification sheets are highly significant for applying to high-power density electron beam technique. So, we finished the vaporized amplification sheets according to the process conditions and analyzed it according to the machining conditions of the electron beam. It was confirmed that the effect on the experimental results differs depending on the influence of the metal powder contained in the developed material.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.272-278
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• 2002

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. In this paper, the effect of pattern density, trench width and selectivity of slurry on dishing in STI CMP process was investigated by using specially designed isolation pattern. As trench width increased, the dishing tends to increase. At $20{\mu}m$ pattern size, the dishing was decreased with increasing pattern density Low selectivity slurry shows less dishing at over $160{\mu}m$ trench width, whereas high selectivity slurry shows less dishing at below $160{\mu}m$ trench width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.123-127
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• 2000

In order to investigate the influence of manufacturing process on the electrical properties, we used two kinds of low density polyethylene prepared using metallocene catalyst (mL), linear low density polyethylene prepared using Ziegler catalyst (LL) and low density polyethylene by high pressure process (LD). mL has the narrowest composition and molecular weight distributions. We measured the dc and impulse breakdown strengths and current densities at 3$0^{\circ}C$, 6$0^{\circ}C$ and 9$0^{\circ}C$. mL had a higher breakdown strength and a lower high-field current than LD and LL. These results were discussed from the point of manufacturing processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.853-858
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• 2003

In this study, a new simplified technology for fabricating high density trench gate DMOSFETs using only three mask layers and TEOS/nitride spacer is proposed. Due to the reduced masking steps and self-aligned process, this technique can afford to fabricate DMOSFETs with high cell density up to 100 Mcell/inch$^2$ and cost-effective production. The resulting unit cell pitch was 2.3∼2.4${\mu}$m. The fabricated device exhibited a excellent specific on-resistance characteristic of 0.36m$\Omega$. cm$^2$ with a breakdown voltage of 42V. Moreover, time to breakdown of gate oxide was remarkably increased by the hydrogen annealing after trench etching.