• Title/Summary/Keyword: high density material

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Controlling Defects in Graphene Film for Enhanced-Quality Current Collector of Zinc-Ion Batteries with High Performance (고성능 아연-이온 전지의 고품질 집전체를 위한 그래핀 필름의 결함 제어)

  • Young-Geun Lee;Geon-Hyoung An
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.159-163
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    • 2023
  • Zinc-ion Batteries (ZIBs) are currently considered to be effective energy storage devices for wearable electronics because of their low cost and high safety. Indeed, ZIBs show high power density and safety compared with conventional lithium ion batteries (LIBs) and exhibit high energy density in comparison with supercapacitors (SCs). However, in spite of their advantages, further current collector development is needed to enhance the electrochemical performance of ZIBs. To design the optimized current collector for high performance ZIBs, a high quality graphene film is suggested here, with improved electrical conductivity by controlling the defects in the graphene film. The graphene film showed improved electrical conductivity and good electron transfer between the current collector and active material, which led to a high specific capacity of 346.3 mAh g-1 at a current density of 100 mA g-1, a high-rate performance with 116.3 mAh g-1 at a current density of 2,000 mA g-1, and good cycling stability (68.0 % after 100 cycles at a current density of 1,000 mA g-1). The improved electrochemical performance is firmly because of the defects-controlled graphene film, leading to improved electrical conductivity and thus more efficient electron transfer between the current collector and active material.

Creep Behavior Analysis of High Cr Steel Using the Constitutive Model Based on Microstructure (미세조직기반 구성모델을 이용한 고크롬강의 크리프 거동 해석)

  • 윤승채;서민홍;백경호;김성호;류우석;김형섭
    • Transactions of Materials Processing
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    • v.13 no.2
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    • pp.160-167
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    • 2004
  • In order to theoretically analyze the creep behavior of high Cr steel at $600^{\circ}C$, a unified elasto-viscoplastic constitutive model based on the consideration of dislocation density is proposed. A combination of a kinetic equation describing the mechanical response of a material at a given microstructure in terms of dislocation glide and evolution equations for internal variables characterizing the microstructure provides the constitutive equations of the model. Microstructural features of the material such as the grain size and spacing between second phase particles are directly implemented in the constitutive equations. The internal variables are associated with the total dislocation density in a simple model. The model has a modular structure and can be adjusted to describe a creep behavior using the material parameters obtained from uniaxial tensile tests.

Swelling Pressures of a Potential Buffer Material for High-Level Waste Repository

  • Lee, Jae-Owan;Cho, Won-Jin;Chun, Kwan-Sik
    • Nuclear Engineering and Technology
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    • v.31 no.2
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    • pp.139-150
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    • 1999
  • The swelling pressure of a potential buffer material was measured and the effect of dry density, bentonite content and initial water content on the swelling pressure was investigated to provide the information for the selection of buffer material in a high-level waste repository. Swelling tests were carried out according to Box-Behnken's experimental design. Measured swelling pressures were in the wide range of 0.7 Kg/$\textrm{cm}^2$ to 190.2 Kg/$\textrm{cm}^2$ under given experimental conditions. Based upon the experimental data, a 3-factor polynomial swelling model was suggested to analyze the effect of dry density, bentonite content and initial water content on the swelling pressure The swelling pressure increased with an increase in the dry density and bentonite content, while it decreased with increasing the initial water content and, beyond about 12 wt.% of the initial water content, levelled off to nearly constant value.

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A Study on Photoresist Stripping Using High Density Oxygen Plasma (고밀도 산소 플라즈마를 이용한 감광제 제거공정에 관한 연구)

  • Jung, Hyoung-Sup;Lee, Jong-Geun;Park, Se-Geun;Yang, Jae-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.95-100
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    • 1998
  • A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

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Facile Synthesis of Vertically Aligned CdTe-Si Nanostructures with High Density (수직배양된 고집적 CdTe-Si 나노구조체의 제조방법)

  • Im, Jinho;Hwang, Sung-hwan;Jung, Hyunsung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.185-191
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    • 2017
  • Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

A study of EPD for Shallow Trench Isolation CMP by HSS Application (HSS을 적용한 STI CMP 공정에서 EPD 특성)

  • Kim, Sang-Yong;Kim, Yong-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.35-38
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    • 2000
  • In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

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Determination of Energy Distribution of Interface State Density in the MNOS Memory Device (MNOS 기억소자의 계면상태밀도의 에너지 분포의 결정)

  • 한태현;강창수;박종하;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.10a
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    • pp.1-4
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    • 1988
  • The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

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Gigacycle Fatigue Endurance Strength of High Density Mo and Cr-Mo Prealloyed Sintered Steel

  • Xu, Chen;Danninger, Herbert;Khatibi, Golta;Weiss, Brigitte
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.385-386
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    • 2006
  • For attaining optimum fatigue resistance of PM steels, high density levels are necessary. In this work, sintered steels Fe-1.5%Mo-0.6%C and Fe-1.5%Cr-0.2%Mo-0.6%C were produced with density levels of 7.1 to $7.6\;g.cm^{-3}$. Ultrasonic fatigue testing with 20 kHz was performed in push-pull mode up to 10E9 cycles. It was shown that the fatigue endurance strength is strongly improved by higher density levels, but also higher sintering temperatures are beneficial. The Cr-Mo steels proved to be superior to the plain Mo alloyed, due to a more favourable as-sintered matrix microstructure.

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Evaluation on the buffer temperature by thermal conductivity of gap-filling material in a high-level radioactive waste repository

  • Seok Yoon;Min-Jun Kim ;Seeun Chang ;Gi-Jun Lee
    • Nuclear Engineering and Technology
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    • v.54 no.11
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    • pp.4005-4012
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    • 2022
  • As high-level radioactive waste (HLW) generated from nuclear power plants is harmful to the human body, it must be safely disposed of by an engineered barrier system consisting of disposal canisters and buffer and backfill materials. A gap exists between the canister and buffer material in a HLW repository and between the buffer material and natural rock-this gap may reduce the water-blocking ability and heat transfer efficiency of the engineered barrier materials. Herein, the basic characteristics and thermal properties of granular bentonite, a candidate gap-filling material, were investigated, and their effects on the temperature change of the buffer material were analyzed numerically. Heat transfer by air conduction and convection in the gap were considered simultaneously. Moreover, by applying the Korean reference disposal system, changes in the properties of the buffer material were derived, and the basic design of the engineered barrier system was presented according to the gap filling material (GFM). The findings showed that a GFM with high initial thermal conductivity must be filled in the space between the buffer material and rock. Moreover, the target dry density of the buffer material varied according to the initial wet density, specific gravity, and water content values of the GFM.

Development of High Voltage and High Energy Density Capacitor for Pulsed Power Application (펄스파워용 고전압 고에너지밀도 커패시터 개발)

  • 이병윤;정진교;이우영;박경엽;이수휘;김영광
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.52 no.5
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    • pp.203-210
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    • 2003
  • This paper describes high voltage and high energy density capacitor developed for pulsed power applications. The rated voltage of the developed capacitor is DC 22 [kV], the capacitance is 206 [$\mu$F] and the energy density is about 0.7 [kJ/kg]. Polypropylene film and kraft paper were used as the dielectrics. The ratio of the thickness of each dielectric material which consists of the composite dielectric structure, stacking factor and the termination method were determined by the charging and discharging tests on model capacitors. In terms of energy density, the developed capacitor has higher energy density compared with the products of foreign leading companies. In addition, it has been proved that the life expectancy can be more over 2000 shots through the charging and discharging test. The voltage reversal factor was 20%. This capacitor can be used as numerous discharge applications such as military, medical, industrial fields.