• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1265-1270
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• 2008

Electromigration is a one of a critical failure mechanism in microelectronic devices. Minimizing the thin film interconnections in microelectronic devices make high current densities at electrrical line. Under high current densities, an electromigration becomes critical problems in a microelectronic device. This phenomena under DC conditions was investigated with high temperature. The current density of 1.5MA/cm2 was stressed in interconnections under DC condition, and temperature condition $150^{\circ}C,\;175^{\circ}C,\;200^{\circ}C$. By increasing of thin film interconections, microelectronic devices durability is decreased and it gets more restriction by temperature. Electromigration makes electronic open by void induced, and hillock induced makes electronic short state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.88-95
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• 2002

Recent development in the field of RE-Ba-Cu-O (REBCO, RE: Y or rare earth elements) bulk high-Tc superconductors (HTS) is reviewed in the present paper. After the fatal weak link problem of sintered REBCO superconductors has been overcome by melt processing, this field has been greatly advanced during last ten years. The critical current density $J_c$ at 77 K has been enhanced by introducing effective flux pinning sites into the $REBa_2Cu_3O_y$ (RE123) superconducting matrix. Large melt-textured REBCO bulk crystals have been fabricated with the TSMG(top-seeded melt growth) technique. Mechanical properties of REBCO bulks have been improved by using the Ag additive or epoxy resin. Real bulk applications such as current lead, fault current limiter, flywheel energy storage system, magnetic field source, magnetic separation system, and etc., surely come true near future.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.43-45
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• 2002

High current density Bi-2223 tapes have recently become commercially available. There are some important characteristics of the tapes, e.g. critical current, ac loss, fault current characteristics, for an application such as a power cable or a power transformer. They have been investigated experimentally and discussed in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.163-164
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• 2005

Round shape Bi2212/Ag is isotropic and can be fabricated Rutherford cable to transport high current. Bi2212/Ag round wires with various Ag ratio were fabricated using powder-in-tube process. Double stacked 385 (55\times$7) filamentary wire of various wire diameter was heat-treated at various melting temperature. Wires which have Ag ratio of 0.3 and 0.42 of Ag tube for monofilament show similar critical current density. As average filament diameter decreases from 33 to 16 \mu$m, critical current density of wires increase, and in case of 16 ${\mu}m$ and $T_m$ 890$^{\circ}C$, critical current density was 2,062 $A/mm^2$ at 4.2 K, 0 T.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.7-7
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• 2001

• Progress in Superconductivity
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• 제1권1호
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• pp.68-72
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• 1999

Since the discovery of high Tc superconductors, great efforts have been focused to develop high performance HTS magnets for the ultimate applications to power system devices. Magnet designers, however, have had difficulties in the estimation of the maximum operating current of the designed magnet from the tested short sample data, due to the degradation of the critical current density in the magnet. Similar story applies to the HTS electrical bus bar. It has been found that the critical current of Bi-2223 stacked tapes is much less than the total summation of critical currents of each tape, which is mainly attributed to the self magnetic fields. Furthermore, since the critical current degradation of Bi-2223 tape is greater in the normal magnetic field (to the tape surface) than in the parallel one, detailed magnetic field configurations are required to reduce the self field effects. In this paper, we calculate the self field effects of a stacked conductor, defining self field factors of normal and parallel magnetic fields to the tape surface. Finally, the critical current degradations in the HTS magnet are explained by the introduced self field factors of the stacked conductor.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.1-3
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• 2002

Single Josephson junctions, which are of cross type, of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated under several oxidation conditions to Investigate controllabilities of critical current density (Jc) with the standard KRISS processes. Considering that the self-field effect suppresses the observed critical current (Ice) at high Jc region, we could reasonably estimate Jc values from I-V observations. The dependence of the obtained Jc as a function of exposure, which is equal to pressure (P) times time (t), was well fitted to a curve of Jc ~ (Pt)-0.34. The maximum Jc value at the controllability margin was found to be 3 kA/cm$^2$with the current equipment set up.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.35-38
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• 1993

SCLD(supercondocting current 1imiting device) with YBaCuO superconductor was fabricated by the sol-gel and the doctor-blade method. Critical current density ($J_{c}$) and critical current ($I_{c}$) of the SCLD are 100.27 A/$cm^2$and 1A at 77K and the electrodes contact with SCLD by silver paste. The SCL was connected with test circuit in series. When apple iud current exceed critical current value of the SCLD in testing circuit, the SCLD ristricts the over current by generating resistance itself without delay. Resistance of SCLD increase lineary 0 to 1.6$\Omega$ in propotion to applied current above the critical current $I_{c}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.250-254
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• 2000

High temperature superconducting films deposited on metal Ag wire were prepared with YBCO powders by electrophoretic deposition method. $I_2$was used as additives for surface charge of YBCO particles. When 2~3 wt.% $BaF_2$ was added in the YBCO suspension, the pores and cracks of film surface were decreased and film density could be increased. In case of YBCO films, the critical current density ($J_{c}$) was calculated at the value of $1458{\;}A/\textrm{cm}^2$ (77K, 0K) by 4 point prove method.