• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.30-31
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• 2006

The LSCF cathode for Solid Oxide Fuel Cell was investigated to develop high performance unit cell at intermediate temperature by modified oxalate method with different electrolyte. The LSCF precursors using oxalic acid, ethanol and $NH_4OH$ solution were prepared at $80^{\circ}C$, and pH was controlled as 2, 6, 7, 8, 9 and 10. The synthesis precursor powders were calcined at $800^{\circ}C$, $1000^{\circ}C$ and $1200^{\circ}C$ for 4hrs. Unit cells were prepared with the calcined LSCF cathode, buffer layer between cathode and each electrolyte that is the LSGM, YSZ, ScSZ and CeSZ. The synthesis LSCF powders by modified oxalate method were measured by scanning electron microscope and X-ray diffraction. The interfacial polarization resistance of cell was characterized by Solatron 1260 analyzer. The crystal of LSCF powders show single phase at pH 2, 6, 7, 8 and 9, and the average particle size was about $3{\mu}m$. The electric conductivity of synthesis LSCF cathode which was calcined at $1200^{\circ}C$ shows the highest value at pH 7. The cell consist of GDC had the lowest interfacial resistance (about 950 S/cm@650) of the cathode electrode. The polarization resistance of synthesis LSCF cathode by modified oxalate method has the value from 4.02 to 7.46ohm at $650^{\circ}C$. GDC among the electrolytes, shows the lowest polarization resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.662-667
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• 2014

B-doped Si nanoparticles were synthesized by using inductive coupled plasma and specially designed double tube reactor, and their microstructures were investigated. 0~10 sccm of $B_2H_6$ gas was injected during the synthesis of Si nanoparticles from $SiH_4$ gas. Highly crystalline Si nanoparticles were synthesized, and their crystallinity did not change with increase of $B_2H_6$ flow rates. From SEM measurement, their particle sizes were approximately 30 nm regardless of $B_2H_6$ flow rates. From SIMS analysis, almost saturation of B in Si nanoparticles was detected only when 1 sccm of $B_2H_6$ was injected. When $B_2H_6$ flow rate exceeded 5 sccm, higher concentration of B than solubility limit was detected even if any secondary phase was not detected in XRD or HR-TEM results. Due to their high electronic conductivity, those heavily B-doped Si nanoparticles can be a potential candidate for an active material in Li-ion battery anode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.79-80
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing (CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical planarization/polishing (ECMP) or electro-chemical mechanical planarization was introduced to solve the. technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.54-54
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• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• Journal of Korean Society on Water Environment
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• v.22 no.3
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• pp.521-526
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• 2006

We have studied the possibility of removing Anabaena macrospora by injecting copper sulfate ($CuSO_4{\cdot}5H_2O$) into the raw water of a drinking water purification plant. Anabaena macrospora caused the unpleasant geosmin odor of drinking water in August 2001. The cell break-point of A. macrospora was 0.3 mg/L of $CuSO_4$. We were able to reduce the standing crops of A. macrospora effectively because $CuSO_4$ could break A. macrospora selectively. Because 0.3 mg/L of $CuSO_4$ could break both cells and akinetes, it reduced the possibility of a recurrent problem for them to meet a favorable condition. When $CuSO_4$ was injected in the early growth phase of algae and the mixing intensity was high, A. macrospora could be removed most effectively. The odor caused by A. macrospora was sustained for a while without any sudden change of environmental condition. Therefore, we hope that it could shorten the period of obstacle by injecting the optimal amount of 0.3 mg/L of $CuSO_4$. The water quality, alkalinity, conductivity, hardness and pH didn't changed by the injection of $CuSO_4$.

• Journal of Korean Society on Water Environment
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• v.21 no.3
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• pp.277-283
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• 2005

This paper aimed to compare the daily water quality as well as the hydrological data gathered for the past two years (2000 to 2001) between the two influent rivers of Paldang reservoir. The analysis also has been carried out to draw out the factors that affect the water quality at the dam site, where the main drinking water drawing point is located. The relationship between total amount of monthly rainfall and monthly inflow showed $r^2=0.74$ (p<0.05). The highest peak of inflow of influent rivers recorded in August and September (in the year of 2000) and July and August (2001). Average inflows of influent rivers in 2000 and 2001 are calculated at 209.0, 161.5 CMS (Bughangang), 268.6, 148.2 CMS(Namhangang), and 7.8, 5.0 CMS (Gyeongancheon). The formula which was driven from the relationship between inflow and COD load of influent rivers, explained that COD concentration in general increased with the inflow. But during the rainy seasons (July, August, and September), COD concentration decreased according to the increase of inflow. The daily rainfall and COD concentration(or load) during the rainy season (August and September in the year of 2000, July and August in 2001) indicated that the peak of COD load correspond with the rainfall, which decreased sharply after 3 or 4 days. The reason was thought that the high COD load was diluted rapidly by the rain flow. Water temperature, pH and conductivity measured at dam site decreased obviously when the inflow sharply increased. Peak period of total phosphorus concentration coincided with that of inflow. In rainy season, chlorophyll-a concentration decreased obviously as the inflow increased. The reason can be ascribed to the flushing effect caused by the operation of floodgate.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.798-807
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• 1994

The increase in the resistance of $BaTio_{3}$ with addition of Ca is attributed to the formation ofthe acceptor impurity by $CaCa^{2+}$" which substitutes Ti4+. However, some authors suggested that $Ca^{2+}$ can not substitute $Ti^{4+}$ because of its larger ionic radius. In this work, the existence of acceptor by Ca hasbeen studied through the high temperature equilibrium electrical conductivity of $BaTiO_{3}$ codoped with Caand Nb, where Ba/(Ti+Ca+Nb) was kept equal to unity. It was measured at $1000^{\circ}C$, and the oxygenpartial pressure was controlled between $10^{-15}$ ~ 1 atm. Changing the amount of added Ca and Nbresulted in the compensation effect between donor and acceptor, i.e., Nb was compensated by the acceptor.And through the defect chemical interpretation of the measured data, it was concluded that Ti canbe substitued with Ca. The existence of such acceptor was reaffirmated by ICTS(Isotherma1 CapacitanceTransient Spectroscopy) measurements.oscopy) measurements.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.179-182
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• 2006

The effect of electron beam irradiation on dye sensitized solar cell (DSSC) has been studied to examine degradation of DSSC. The high-energy electron beam irradiation affects on the materials and performance of dye sensitized solar cells. We have checked the effects of electron beam irradiation of $TiO_2$ substrate with and without dye adsorption on the photovoltaic performances of resulting DSSCS and also studied the structural and electrical properties of polymers after irradiation. All solar cells materials were irradiated by electron beams with an energy source of 2MeV at different dose rates of 60 kGy, 120 kGy 240 kGy and 900 kGy and then their photoelectrical parameters were measured at 1 sun $(100 mW/cm^2)$. It was shown that the efficiency of DSSC was decreased as increasing the dose of e-beam irradiation due to lowering in $TiO_2$ crystallinity, decomposition of dye and oxidation of FTO glasses. On the other hand, the performance of solid-state DSSC with polyethylene oxide based electrolyte was improved after irradiation of e-beam due to enhancement of its conductivity and breakage of crosslinking.