• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.138-144
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• 1995

It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at $450^{\circ}C$ on electron beam and RIE patterned RuO2/TiN storage nodes is finally described.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.303-306
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• 2001

Composite insulating materials used in outdoor high voltage equipment are required to have high electric performance because of the miniaturization. The frequence dependence of the permittivity and the loss tangent have important information. In this paper we describe the frequency dependence of the permittivity and the loss tangent for epoxy resin filled with silica and the influence of filler shape on the dielectric properties. The increment of tan $\delta$ in the low frequency region is caused by the increment of both of the electrical conductivity and the polarization due to the shape of filler and water sbsorbed in and near the interface between the fillers and resins. Result of charge current and discharge measure, electric conduction increased according to voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.467-469
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• 2001

KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.753-756
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• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1673-1677
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• 2008

This paper studies on the read rate of UHF-band RFID tag. An RFID tag antenna attached on the high permittivity surface will be detuned that results in deteriorating the read rate. In this study, we investigate that the electrical performance for the tag antenna is detuned due to the ceramic material and the read rate is radically improved after tuning the antenna.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.311-312
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• 2007

In this study, composite $BaSrTiO_3$ has been studied for high frequency device applications. Composite $Ba_{0.5}Sr_{0.5}TiO_3$ has high dielectric permittivity and low loss tangent at the relative frequency range from MHz to GHz. 10,30 and 50 wt% of epoxy doped $Ba_{0.5}Sr_{0.5}TiO_3$ powders were prepared with bisphenol A and F polymer employing ball milling process. Epoxy/($BaSrTiO_3$) composites thick films were screen printed on the Cu plated PCB substrates through screen printing methods. The specimens were designed for the embedded capacitor applications. Temperature dependent dielectric permittivity of Epoxy doped $BaSrTiO_3$ ceramics was measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.379-383
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• 2015

Some insulating materials are organized and analyzed with variables to obtain the optimized profile of encapsulated three phase of epoxy barrier which is applied to gas compartment and supporting conductors for high voltage GIS (gas insulated switchgear). The high voltage GIS is used in electrical power system and operating reliability. In this paper, optimization possibility of barrier shape including both electrical insulation performance and mechanical strength, premised on that condition minimizing volume and light weight should be kept for high voltage GIS, could be achieved by analysis simulation. As a result, filling material which is lower permittivity such as $SiO_2$ instead of $Al_2O_3$ properly to the epoxy material, can be improved to increase the electrical insulation performance and mechanical strength for an optimized profile barrier of a high voltage GIS.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.445-451
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• 2019

This paper presents the design of a water-cooled radio-frequency(RF) load with simple structure, for use in the ultrahigh-frequency (UHF) band. After establishing a formula to obtain the physical properties that affect RF matching, we measure the permittivity and $tan{\delta}$(Loss tangent) of tap water. Because the temperature of tap water increases upon applying high power, we measure the permittivity and $tan{\delta}$ for all changes in the temperature of tap water. In order to reduce the length of the water-load, molybdate with high $tan{\delta}$ is mixed with tap water. The loss tangent of the mixture is found to be approximately 26 times higher than that of tap water. Finally, we manufacture a water-cooled RF load and measure its characteristics. A reflection coefficient of -19 dB and bandwidth of 15 % is obtained at 460 MHz.