• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Advances in materials Research
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• v.2 no.2
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• pp.77-91
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• 2013

High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Composites Research
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• v.35 no.3
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• pp.201-215
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• 2022

This paper presents the development of thin and lightweight ultra-high temperature radar-absorbing ceramic composites composed of an aluminosilicate ceramic matrix-based geopolymer reinforced ceramic fiber and sendust magnetic nanoparticles in X-band frequency range (8.2~12.4 GHz). The dielectric properties with regard to complex permittivity of ceramic/sendust-aluminosilicate composites were proportional to the size of sendust magnetic nanoparticle with high magnetic characteristic properties as flake shape and its concentrations in the target frequency range. The characteristic microstructures, element composition, phase identification, and thermal stability were examined by SEM, EDS, VSM and TGA, respectively. The fabricated total thicknesses of the proposed single slab ultra-high temperature radar absorber correspond to 1.585 mm, respectively, exhibiting their excellent EM absorption performance. The behavior of ultra-high temperature EM wave absorption properties was verified to the developed free-space measurement system linked with high temperature furnace for X-band from 25℃ to 1,000℃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.235.1-235.1
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• 2015

Artificially-engineered materials, whose electromagnetic properties are not available in nature, such as negative reflective index, are called metamaterials (MMs). Although many scientists have investigated MMs for negative-reflective-index properties at the beginning, their interests have been extended to many other fields comprising perfect lenses. Among various kinds of MMs, metamaterial absorbers (MM-As) mimic the blackbody through minimizing transmission and reflection. In order to maximize absorption, the real and the imaginary parts of the permittivity and permeability of MM-As should be adjusted to possess the same impedance as that of free space. We propose a dual-wide-band and polarization-independent MM-A. It is basically a triple-layer structure made of metal/dielectric multilayered truncated cones. The multilayered truncated cones are periodically arranged and play a role of meta-atoms. We realize not only a wide-band absorption, which utilizes the fundamental magnetic resonances, but also another wide-band absorption in the high-frequency range based on the third-harmonic resonances, in both simulation and experiment. In simulation, the absorption bands with absorption higher than 90% are 3.93 - 6.05 GHz and 11.64 - 14.55 GHz, while the experimental absorption bands are in 3.88 - 6.08 GHz and 9.95 - 13.84 GHz. The physical origins of these absorption bands are elucidated. Additionally, it is also polarization-independent because of its circularly symmetric structures. Our design is scalable to smaller size for the infrared and the visible ranges.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.796-808
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• 2007

In this paper, two novel compact microstrip bandstop filters using complimentary split ring resonators(CSRRs) and spiral resonators is proposed. The first one is the bandstop filter using an array of CSRRs etched on the center line of a microstrip. The bandstop is due to the presence of negative effective permittivity and positive permeability near resonant frequency which prevent the wave propagation. The second on is the bandstop filter using an array of spiral resonators etched on the center line of a microstrip. The bandstop is due to the self-resonance of spiral circuit. We have achieved controllable resonance frequency and bandwidth, super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff. The electrical sizes of two proposed filter are very small. Additionally, they can be easily fabricated and compatible with MMIC or PCB technology.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.10
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• pp.1189-1196
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• 2015

In this paper, a microstrip-fed multiband monopole antenna for GPS(Global positioning system)/WiMAX(:Worldwide interoperability for microwave access)/WLAN(Wireless Local Area Networks) for applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two rectangular double rings and L strips pair and then designed in order to get triple band characteristics. To obtain the optimized parameters, we used the simulator, Ansoft's High Frequency Structure Simulator(HFSS). The proposed antenna is made of $27.0{\times}54.0{\times}1.0mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results shown that the proposed antenna obtained the -10 dB impedance bandwidth 300 MHz (1.325~1.625 GHz), 400 MHz (2.275~2.675 GHz), and 600 MHz (3.15~3.75 GHz) covering the GPS/WiMAX/WLAN bands. Also, the proposed antenna measured gain and radiation patterns characteristics for required operating bands.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.9
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• pp.841-848
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• 2016

In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.744-746
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• 1992

In this study, we investigated structural, electrical characteristics and studied the conditions which improved hydrostatic constants in hydrophones as we changed x = 0.1, 0.25, 0.35, 0.4 and y = 0.04, 0.08, 0.12, 0.16 in $(Pb_{1-x}Ca_x)[(Mg_{1/3}Nb_{2/3})_yTi_{1-0.01}Mn_{0.01}]O_3$ ceramics in which Ca was substituted with Pb and $Pb(Mg_{1/3}Nb_{2/3})O_3$ was added to decrease sintering temperature in $PbTiO_3$. When Ca was substituted 0.25[mol], the largest electro-mechanical anisotropy ($k_t/k_p$) was found ($k_t{\fallingdotseq}50,k_p{\fallingdotseq}4$), and the less $Pb(Mg_{1/3}Nb_{2/3})O_3$ and the stronger poling field, the larger this anisotropy was. When Ca=0.25[mol], $Pb(Mg_{1/3}Nb_{2/3})O_3=0.08[mol]$ were substituted, ($k_t/k_p$)(=12, 3) was large, permittivity was low and hydrostatic constants were high. Therefore, this composition is promising as wide band ultrasonic devices in water.