• 제목/요약/키워드: high $O_2$

검색결과 12,501건 처리시간 0.039초

TiO2 Nanotubes Fabricated by Atomic Layer Deposition for Solar Cells

  • Jung, Mi-Hee;Kang, Man-Gu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.161-161
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    • 2011
  • Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

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Inductively coupled plasma etching of SnO2 as a new absorber material for EUVL binary mask

  • 이수진
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.124-124
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    • 2010
  • Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

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극한 환경용 반도체 기술 동향 (Technical Trends of Semiconductors for Harsh Environments)

  • 장우진;문재경;이형석;임종원;백용순
    • 전자통신동향분석
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    • 제33권6호
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    • pp.12-23
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    • 2018
  • In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

Cu/ZnO/Cr2O3/Al2O3 촉매를 이용한 이산화탄소의 수소화 연구 (A Study on the Hydrogenation of CO2 Using Cu/ZnO/Cr2O3/Al2O3 Catalysts)

  • 심규성;한상도;김종원;김연순;명광식;박기배
    • 한국수소및신에너지학회논문집
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    • 제7권2호
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    • pp.147-155
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    • 1996
  • 지구온난화를 방지하기 위하여 대기중에 방출되는 이산화탄소를 고정화시키는 기술의 하나로 이산화탄소를 접촉수소화시키는 연구를 수행하였다. 수소화 촉매로는 $Cu/ZnO/Cr_2O/Cr_2O_3/Al_2O_3$를 기본으로 하여 여기에 팔라듐을 추가한 촉매들을 이용하였으며, 200서 $350^{\circ}C$ 사이의 온도에서 상압 및 고압의 조건에서 수소화 반응을 행하였다. 그 결과 수소화 반응에 가장 적합한 반응조건은 반응온도 $250^{\circ}C$, 반응압력 30기압 이상에서 메탄올의 선택도와 수율이 제일 좋았다. 그러나 예상한 바와는 달리 팔라듐의 첨가에 의한 반응성의 향상은 없었다.

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금속모노리스에 부착된 Ni/CeO2-ZrO2를 이용한 메탄의 자열개질반응 (Autothermal Reforming of Methane using Metallic Monolith Catalyst Coated Ni/CeO2-ZrO2)

  • 이태준;조경태;이종대
    • Korean Chemical Engineering Research
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    • 제45권6호
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    • pp.663-668
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    • 2007
  • $Ni/CeO_2-ZrO_2$ 촉매를 이용하여 수소 제조를 위한 메탄의 자열개질반응 특성을 조사하였다. 메탄의 자열개질반응에서 촉매의 활성과 안정성을 향상시키기 위해 알루미나가 코팅된 금속 모노리스를 사용하였으며, 금속모노리스 촉매체는 높은 반응온도에서 분말형태의 촉매에 비해 높은 메탄 전환율을 나타내었다. 자열개질반응에 있어서 $H_2O/CH_4/O_2$의 비는 전환율에 영향을 미치는 중요한 변수임을 알 수 있었다. $H_2O/CH_4$ 비가 증가함에 따라 수소 수율은 증가되고, 또한 $O_2/CH_4$ 비가 증가함에 따라 메탄 전환율은 증가하지만 수소 수율은 감소하였다. $Ni/CeO_2-ZrO_2$ 촉매에 0.5 wt%의 귀금속 촉매인 Ru 첨가로 인해 낮은 반응온도에서 촉매 활성이 향상되었다.

Development of Inexpensive High Energetic Electrodes Ni-Cu and Ni-CeO2-Cu for Renewable Energy through Direct Ethanol Fuel Cell

  • Guchhait, Sujit Kumar;Paul, Subir
    • Journal of Electrochemical Science and Technology
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    • 제7권3호
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    • pp.190-198
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    • 2016
  • Application of fuel cell to produce renewable energy for commercial purpose is limited by the high cost of Pt based electrode materials. Development of inexpensive, high energetic electrode is the need of the hour to produce pollution free energy using bio-fuel through a fuel cell. Ni-Cu and Ni-CeO2-Cu electrode materials, electro synthesized by pulse current have been developed. The surface morphology of the electrode materials is controlled by different deposition parameters in order to produce a high current from the electro-oxidation of the fuel, the ethanol. The developed materials are electrochemically characterized by Cyclic Voltammetry (CV), Chronoamperometry (CA) and Potentiodynamic polarization tests. The results confirm that the high current is due to their enhanced catalytic properties viz. high exchange current density (i0), low polarization resistance (Rp) and low impedance. It is worthwhile to mention here that the addition of CeO2 to Ni-Cu has outperformed Pt as far as the high electro catalytic properties are concerned; the exchange current density is about eight times higher than the same on Pt surface. The morphology of the electrode surface examined by SEM and FESEM exhibits that the grains are narrow and sub spherical with 3D surface, containing vacancies in between the elongated grains. The fact has enhanced more surface area for electro oxidation of the fuel, giving rise to an increase in current. Presence of Ni, CeO2, and Cu is confirmed by the XRD and EDXS. Fuel cell fabricated with Ni-CeO2-Cu material electrode is expected to produce clean electrical energy at cheaper rates than conventional one, using bio fuel the derived from biomass.

SiO$_2$-TiO$_2$-RO(RO: BaO, CaO, SrO)계 고유전율 유리 제조 및 글라스/세라믹스의 소결 거동에 관한 연구 (A study on the glass fabrication and sintering behaviour of glass/ceramics for SiO2-TiO2-RO(RO: BaO, CaO, SrO) system)

  • 구기덕;오근호
    • 한국결정성장학회지
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    • 제8권4호
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    • pp.626-633
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    • 1998
  • 본 연구에서는 고유전율의 저온소성용 글라스/세라믹을 제조하고자, SiO2-TiO2-RO계 결정화 유리를 제조하고 Al2O3를 필러 물질로 혼합하여 복합체를 제조하고 그 특성을 관찰하였다. 본 유리조성으로써 $900^{\circ}C$ 이하에서 결정화되는 유리의 제조가 가능하였고, RO (BaO, CaO, SrO)의 성분에 따라 결정화 온도는 변화함을 알 수 있었다. 본 유리조성에 $Bi_2O_3$를 플럭스로 첨가하고, 세라믹 필러로써 Al2O3를 사용하여 $860^{\circ}C$에서 소성함으로써 고유전율의 저온소성용 글라스/세라믹의 제조가 가능하였고, 이때 복합체의 밀도는 3.96g/$\textrm{cm}^3$ 이었고, 유전율은 17, Q.f 값은 600이었다.

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$A_2B_2O_7$계를 중심으로 한 고온용 압전체의 개발동향 (The recent trend of $A_2B_2O_7$ piezoelectric ceramics having high curie temperature)

  • 남효덕
    • E2M - 전기 전자와 첨단 소재
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    • 제9권4호
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    • pp.415-421
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    • 1996
  • 본 고에서는 고온센서용 압전체가 필요하고 실용화할 수 있는 다결정 압전세라믹스 및 박막재료가 요구되는 점을 감안하여 고온에서도 사용할 수 있는 단결정 $A_{2}$B$_{2}$O$_{2}$형의 성장과 그 전기적 특성 및 최근 개발을 시도하고 있는 다결정 $A_{2}$B$_{2}$O$_{2}$형 압전체에 대한 지금까지의 개발동향을 문헌소개와 함께 필자의 연구결과 일부도 보고하며 아울러 박막화의 가능성도 제시하고자 한다.

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주조용 알루미늄합금의 $Al_{2}O_{3}-40%TiO_{2}$ 용사층에 대한 마멸특성 평가 (Evaluation of wear chracteristics for $Al_{2}O_{3}-40%TiO_{2}$ sprayed on casting aluminum alloy)

  • 채영훈;김석삼
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1997년도 제26회 추계학술대회
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    • pp.183-190
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    • 1997
  • The wear behaviors of $Al_2O_3-40%TiO_2$ deposited on casting aluminum alloy(ASTM A356) by plasma spray against SiC ball have been investigated experimentally. Friction and wear tests are carried out at room temperature. The friction coefficient of $Al_2O_3-40%TiO_2$ coating is lower than that of pure $Al_2O_3$ coating(APS). It is found that low friction correspond to low wear and high friction to high wear in the experimental result. The thickness of $Al_2O_3-40%TiO_2$ coatings indicated the existence of the optimal coating thickness. It is found that a voids and porosities of coating surface result in the crack generated. As the tensile stresses in coating increased with the increased friction coefficient. The columnar grain of coating will be fractured to achieve the critical stress. It is found that the cohesive of splats and the porosity of surface play a role in wear characteristics. It is suggested that the mismatch of thermal expansion of substrate and coating play an important role in wear performance. Tensile and compressire under thermo-mechanical stress may be occurred by the mismatch between thermal expansion of substrate and coating. This crack propagation above interface is observed in SEM.

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SiO2/Al2O3 적층 감지막의 두께 최적화를 통한 고성능 Electrolyte-insulator-semiconductor pH 센서의 제작 (Thickness Optimization of SiO2/Al2O3 Stacked Layer for High Performance pH Sensor Based on Electrolyte-insulator-semiconductor Structure)

  • 구자경;장현준;조원주
    • 한국전기전자재료학회논문지
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    • 제25권1호
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    • pp.33-36
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    • 2012
  • In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.