• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.791-796
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• 1993

The electro-magnetic properties of the Mn-Zn ferrite single crystal with small variation of Fe2O3 concentration at the high permeability composition, 53mol% Fe2O3-28.5mol% MnO-18.5mol% ZnO, have been studied for the VCR magnetic head application. With the increase of the Fe2O3 concentration, the Fe2+ concentration increased, the specific resistivity decreased, the secondary maximum permeability shifted to the lower temperature, and the initial permeability decreased. It was concluded that the small variation of $\pm$0.5mol% Fe2O3 concentration greatly affected the electro-magnetic properties of Mn-Zn ferrite single crystals. At the composition of 53mol% Fe2O3, the initial permeability was comparatively high (650 at 5MHz) and its temperature dependence was small.

• Journal of Information Display
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• v.2 no.3
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• Composites Research
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• v.13 no.6
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• pp.1-8
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• 2000

The fabrication Process of $Al_2O_{3p}$/AC8A composites by pressureless infiltration technique and the effects of additive Mg content and volume fraction of particulate reinforcement on mechanical and wear properties were investigated. It was found that the bending strength decreased with increasing volume fraction of $Al_2O_{3p}$ particles. Whereas hardness increased with volume fraction of $Al_2O_{3p}$ particles. The decrement of strength in case of high volume fraction of $Al_2O_{3p}$ particles was attributed to high porosity level. In terms of additive Mg content, $Al_2O_{3p}$/AC8A composites containing around 5~7wt% of additive Mg indicated the highest strength, and hardness values increased with additive Mg contents. Wear resistance of AC8A alloy were improved by reinforcement of $Al_2O_{3p}$ particles especially at high sliding velocity. Wear property of $Al_2O_{3p}$/AC8A composites and AC8A alloy exhibited different aspects. $Al_2O_{3p}$/AC8A composites indicated more wear loss than AC8A alloy at slow velocity region. However a transition point of wear loss was found at middle velocity region which shows the minimum wear loss and wear loss at high velocity region exhibited almost same value as at slow velocity region, whereas wear loss of AC8A alloy almost linearly increased with sliding velocity. It was found that $Al_2O_{3p}$/AC8A composites containing $Al_2O_{3p}$ volume fraction of 20% exhibited abrasive wear surface regardless of sliding velocity and $Al_2O_{3p}$/AC8A composites containing $Al_2O_{3p}$ volume fraction of 40% showed slightly adhesive wear surface at low sliding velocity, and it progressed to severe wear as increasing the sliding velocity.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.15-19
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• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.959-960
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• 2006

Li reacts with $N_2$ at room temperature. In order to activate Li, the mechanical milling of Li with stable metal oxide, namely, $Al_2O_3$ and MgO, using a high energy vibrating ball mill was performed. In the case of Li-MgO system, it reacts with $N_2$, but hardly reacts with $O_2$. The reaction with $N_2$ generally produces $Li_3N$, while for some vigorous reactions the $Mg_3N_2$ is produced as the major phases. In the case of $Li-Al_2O_3$ system, reactivities with both $N_2$ and $O_2$ are high. The difference is explained in terms of the reaction mechanism and the Li state.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.690-696
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• 2019

Geopolymer is an alumina silicate-based ceramic material that has good heat-resistance and fire-resistance; it can be cured at room temperature, and thus its manufacturing process is simple. Geopolymer can be used as a reinforcement or floor finish for high-speed curing applications. In this manuscript, we investigate a high-speed curing geopolymer achieved by adding calcium to augment the curing rate. Metakaolin is used as the main raw material, and aqueous solutions of KOH and $K_2SiO_3$ are used as the activators. As a result of optimizing the high bending strength as a target factor for geopolymers with $SiO_2/Al_2O_3$ ratio of 4.1 ~ 4.8, the optimum ranges of the active agent are found to be $0.1{\leq}K_2O/SiO_2{\leq}0.4$ and $10{\leq}H_2O/K_2O{\leq}32.5$, and the optimum range of the curing accelerator is found to be $$0.82{\leq_-}Ca(OH)_2/Al_2O_3{\leq_-}2.87$$. The maximum flexural strength is found to be 1.35 MPa at $Ca(OH)_2/Al_2O_3=2.82$, $K_2O/SiO_2=0.3$, and $H_2O/K_2O=11.3$. The physical and thermal properties are analyzed to validate the applicability of these materials as industrial insulating parts or repairing finishing materials in construction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

• Journal of Conservation Science
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• v.33 no.3
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• pp.215-223
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• 2017

The purpose of this study is to reveal the characteristics, correlations, and colorant materials of those using the chemical compositions of 30 glasses excavated from the Sarari hall of the Mireuksaji stone pagoda, and to determine the correlations between them and other glass excavated from the Wanggungri site. The results of the chemical analysis of the 11 glass beads show that they are a soda glass group with high contents of $SiO_2$ and $Na_2O$; these can be further subdivided into soda-alumina groups ($Na_2O-Al_2O_3-CaO-Si_2O$). The characteristics of the stabilizer are classified as being of the high alumina glass group (LCHA), except for two glasses. It was concluded that colorant materials affected the coloring for glass beads by various components including Ti, Mn, Fe, Cu and Pb. In addition, we examined six lead glasses which are glass plate and unknown fragments that are of a common lead glass system ($PbO-SiO_2$) with respect to the average contents of PbO (70wt.%) and $SiO_2$ (30wt.%). As a result of comparing these relics with those of the glass beads excavated by Wanggungri, there is a similarity in that they belong to the soda glass group. However, the contents of $Na_2O$ are relatively higher than that of the glass beads in the Mireuksaji pagoda, and most of relics include glasses with a low content of $K_2O$ and CaO. In addition, the PbO and $SiO_2$ contents are slightly different in the lead glass. It seems that the glass relics made at two different sites may have used different raw materials or techniques.