• Corrosion Science and Technology
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• v.21 no.6
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• pp.445-453
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• 2022

SiO_x was prepared from a mixture of Si and SiO₂ via high-energy ball milling as a negative electrode material for Li-ion batteries. The molar ratio of Si to SiO₂ as precursors and the milling time were varied to identify the synthetic condition that could exhibit desirable anode performances. With an appropriate milling time, the material showed a unique microstructure in which amorphous Si nanoparticles were intimately embedded within the SiO₂ matrix. The interface between the Si and SiO₂ was composed of silicon suboxides with Si oxidation states from 0 to +4 as proven by X-ray photoelectron spectroscopy and electrochemical analysis. With the addition of a conductive carbon (Super P carbon black) as a coating material, the SiO_x/C manifested superior specific capacity to a commercial SiO_x/C composite without compromising its cycle-life performance. The simple mechanochemical method described in this study will shed light on cost-effective synthesis of high-capacity silicon oxides as promising anode materials.

• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.141-147
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• 2005

LNG combustion characteristics of oxygen carrier particles were investigated in a batch type bubbling fluidized bed reactor. Three particles, NiO/bentonite, $NiO/NiAl_2O_4$, $CO_xO_y/CoAl_2O_4$, were used as oxygen carrier particles and LNG and air were used as reactants for reduction and oxidation, respectively. In the reducer, high gas conversion and high $CO_2$ selectivity were achieved for all three particles. In the oxidizer, NOx was not detected. The results of exhaust gas analysis showed that inherent $CO_2$ separation and NOx-free combustion are possible in the LNG fueled chemical-looping combustion system with NiO/bentonite, $NiO/NiAl_2O_4$ and $Ca_xO_y/CoAl_2O_4$ particles.

• Horticultural Science & Technology
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• v.33 no.6
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• pp.860-868
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• 2015

The effect of Si supplied during plant cultivation on tolerance to high temperature stress in Euphorbia pulcherrima Willd. 'Ichiban' was investigated. Rooted cuttings were transplanted into 10-cm pots and a complete nutrient solution, containing 0 or $50mg{\cdot}L^{-1}$ Si as either $K_2SiO_3$, $Na_2SiO_3$, or $CaSiO_3$, was supplied through subirrigation or weekly foliar applications. After two months of cultivation, plants were placed in an environment-controlled chamber and subjected to $35{\pm}1^{\circ}C$ (high temperature) conditions for 18 days. Enhanced specific activities of enzymatic antioxidants (APX) and suppressed specific activities of non-enzymatic antioxidants (ELP) were observed in the high temperature-stressed plants with Si application. The Fv/Fm (maximum quantum yield of photosystem II), photosynthetic rate, and Si contents in the shoot increased in the treatments of $K_2SiO_3$ and $Na_2SiO_3$ supplied through subirrigation. The Si-treated plants had more tolerance of high temperature stress than the control plants. Of the Si sources and application methods tested, $K_2SiO_3$ and $Na_2SiO_3$ supplied through subirrigation were found to be the most effective in enhancing tolerance to high temperature stress.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.834-839
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• 2000

The structural properties that SEM photograph of ZnO varistors surface studied by fractal mathematics program were investigated to verify the relations of electrical characteristics. The SEM photograph of ZnO varistors surface were changed by binary code and the grain shape of that were analyzed by fractal dimension. The void of ZnO varistors surface was found by fractal program. The relation between grain density and electrical properties depend on fractal dimension. The grain size in ZnO varistors surface was decreased by increasing of Sb$_2$O$_3$ addition. The spinel structure was formed by Sb$_2$O$_3$addition and it was depressed the ZnO grain formation. The grain size of ZnO by Sb$_2$O$_3$addition were from 5 to 10[${\mu}{\textrm}{m}$]. Among of ZnO varistors, fractal dimension of ZnO4 was very high as a 1.764. The density of grain boundary in ZnO2 and ZnO3 varistors surface was 15[%] by formed spinal structure. The breakdown electric field of ZnO2 that fractal dimension has 1.752 was very high to be 8.5[kV/cm]. When the fractal dimensin was high, the grain shape of ZnO varistors was complex and the serial layers of ZnO grain was increased.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.606-612
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• 1991

We have carried out an extended Huckel calculation to rationalize the role of $CuO_3$ chains and the size effect of the charged model clusters for the following charged model culsters : ${{Cu_6}{O_{21}}^{28-},\;{{Cu_6}{O_{22}}^{30-}\;,{{Cu_9}{O_{30}}^{39-}\;,{{Cu_9}{O_{32}}^{43-}\;,{{Cu_{12}{O_{38}}^{48-}\;,{{Cu_{15}{O_{50}}^{65-}\;,{{Cu_{18}{O_{54}}^{66-}\;,{{Cu_{18}{O_{55}}^{68-}\;,{{Cu_{24}{O_{70}}^{84-}\;and\;{{Cu_{27}{O_{78}}^{93-}$ for high-$T_c$ superconductor $YBa_2Cu_3O_7$: ${{Cu_6}{O_{18}}^{22-}\;,{{Cu_9}{O_{26}}^{31-}}\;,{{Cu_{12}{O_{32}}^{36-}\;,{{Cu_{15}{O_{42}}^{49-}\;,{{Cu_{18}{O_{46}}^{50-}\;,{{Cu_{24}{O_{60}}^{64-}\;and\;{{Cu_{27}{O_{66}}^{69-}$ for insulator $YBa_2Cu_3O_6$. The results show that the electronic structures and properties of the charged model clusters relating to high-$T_c$ superconductor are very sensitive to the size change of the clusters with various environmental effects, wherease those of the charged model clusters for insulator $YBa_2Cu_3O_6$ are monotonous to the size change. The $CuO_3$ chains along the b-direction may yield cooperative electronic coupling with the $CuO_2$ layers in determining both conducting and superconducting properties of $YBa_2Cu_3O_{7-x}$ system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1035-1040
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• 2003

High $T_{c}$ superconducting B $i_2$S $r_2$CaC $u_2$ $O_{8+d}$ (BSCCO2212) films were prepared by a metallorganic decomposition (MOD) method. The metal organic solution of BSCCO2212 was spin-coated on MgO (100) substrates at 3000 rpm for 1 min. To achieve a high critical current density, we controlled heat-treatment conditions and atmosphere. The films were annealed at temperature 75$0^{\circ}C$ ∼ 80$0^{\circ}C$ in $O_2$ or air. We obtained c-axis orientated BSCCO thin films on MgO substrates. The annealed sample at 77$0^{\circ}C$ with $O_2$ showed the critical temperature about 77 K and critical current denstity of 1.19 ${\times}$ 10$^{5}$ A/$\textrm{cm}^2$ about 13 K.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.697-702
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• 2003

FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.593-601
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• 2012

Ordered mesoporous oxide films have been focused because of their low density, high interior specific surface area, and high thermal insulation. Specially, the ordered mesoporous oxide films prepared by self-assembly has many advantages due to easy process and high reproducibility. In this work, ordered mesoporous $SiO_2$, $Al_2O_3$, and $TiO_2$ films were synthesized by control of composition and processing parameter. Also, their structural, thermal, and mechanical properties were characterized variously. In conclusion, ordered mesoporous oxides will be one of core materials in new technology due to their excellent and unique properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.93-94
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• 2006

나노급 CMOS 기술에서 high-k 물질을 이용하여 게이트 유전막을 형성하고자 하는 연구가 활발히 진행되고 있다. 본 논문에서는 high-k 물질인 $TiO_2$의 특성에 대한 연구를 수행하였다. $TiO_2$를 APCVD법으로 p-type 실리콘 기판에 $50{\AA}{\sim}300{\AA}$ 두께로 증착하였고, evaporator를 이용하여 $TiO_2$ 박막위에 Al을 증착하여 MIS소자를 제작하였다. 두께를 가변 하여 Capacitance-Voltage (C-V) 특성을 측정, 분석하였다.