• Progress in Superconductivity and Cryogenics
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• v.7 no.1
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• pp.5-8
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• 2005

MOD Process using metal acetates or trifluoroacetates has been considered to be a strong candidate for a low cost fabrication process for coated conductor with high $J_e$. Recently, an economical MOI) process has been developed for coated conductor with high $J_c$ using low cost starting materials such as YBCO powders. YBCO thin films prepared by single coating on LAO substrate with this modified oxide-precursor solution gives transport $I_c$ of 100A/cm-w and the $J_c$ value of $2.9MA/cm^{2}$ (77K, Self-field). The YBCO coated conductor prepared by single coating with $CeO_2/IBAD-YSZ/SS$ tape gives transport $I_c$ of 50A/cm-w in 2cm. Characterization with XRD, SEM shows that the YBCO layers were epitaxially grown and exhibit well-developed dense micro-structures. This newly developed oxide-precursor based MOD process will provide a low cost route to coated conductor with high $J_c$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.834-842
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• 1997

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina single crystal, sapphire, had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press technique. The morphological change and the healing of cracklike pore in Ca doped high purity single crystal alumina, sapphire, during high temperature heat treatment in vacuum were observed using optical microscopy. The dot-like surface roughening was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO.6Al2O3, were observed on the inner surface after 1 hour heat treatment at 1, 50$0^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at 1, $600^{\circ}C$. This disappearance means that there should be a little increase of Ca solubility limit to alumina at this temperatures.

• Korean Journal of Veterinary Research
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• v.44 no.4
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• pp.497-505
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• 2004

The proliferation of mesangial cells has been associated with the development of diabetic nephropathy. The cell proliferation has been regulated by diverse growth factors. Among them, insulin like growth factors(IGFs) are also involved in the pathogenesis of diabetic nephropathy. However, it is not yet known about the effect of high glucose on IGF-I and IGF-II secretion and the relationship between high glucose-induced secretion of IGFs and PKC or oxidative stress in the mesangial cells. Thus, we examined the mechanisms by which high glucose regulates secretion of IGFs in mesangial cells. High glucose(25 mM) increased IGF-I and IGF-II secretion. High glucose-induced increase of IGF-I and IGF-II secretion were blocked by taurine($2{\times}10^{-3}$ M), N-acetyl cystein(NAC, $10^{-5}M$), or GSH($10^{-5}M$) (antioxidants), suggesting the role of oxidative stress. High glucose-induced secretion of IGF-I and IGF-II were blocked by H-7, staurosporine, and bisindolylmaleimide I(protein kinase C inhibitors). On the other hand, high glucose also increased lipid peroxide (LPO) formation in a dose dependent manner. In addition, high glucoseinduced stimulation of LPO formation was blocked by PKC inhibitors. These results suggest that PKC is responsible for the increase of oxidative stress in the action of high glucose-induced secretion of IGF-I and IGF-II in mesangial cells. In conclusion, high glucose stimulates IGF-I and IGF-II secretion via PKCoxidative stress signal pathways in mesangial cells.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.10a
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• pp.264-268
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• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, and high temperature at $25^{\circ}C,\; 50^{\circ}C, \;100^{\circ}C,\; 150^{\circ}C,\; and\; 180^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\DeltaK_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.239-246
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• 2021

Characteristics of hydrodynamics and heat absorption by gas in a directly-irradiated fluidized bed particle receiver (50 mm-ID X 150 mm high) of SiC particles have been determined. Solid holdups of SiC particles show almost constant values with increasing gas velocity. Fine SiC particles (SiC II; dp=52 ㎛, ρs=2992 kg/㎥) showed low values of relative standard deviation of pressure drop across bed but high solids holdups in the freeboard region compared to coarse SiC particles (SiC I; dp=123 ㎛, ρs=3015 kg/㎥). The SiC II exhibited higher values of temperature difference normalized by irradiance due to the effect of additional solar heat absorption and heat transfer to the gas by the particles entrained in the freeboard region in addition to the efficient thermal diffusion of the solar heat received at bed surface. Heat absorption rate and efficiency increased with increasing the gas velocity and fluidization number. The SiC II showed maximum heat absorption rate of 17.8 W and thermal efficiency of 14.8%, which are about 33% higher than those of SiC I within the experimental gas velocity range.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.1-11
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• 2018

Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

• Environmental Engineering Research
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• v.20 no.4
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• pp.347-355
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• 2015

The growth kinetics of phototrophic microorganisms can be controlled by the light irradiance, the concentration of an inorganic nutrient, or both. A multi-component kinetic model is proposed and tested in novel batch experiments that allow the kinetic parameters for each factor to be estimated independently. For the cyanobacterium Synechocystis sp. PCC6803, the estimated parameters are maximum specific growth rate $({\mu}_{max})=2.8/d$, half-maximum-rate light irradiance $(K_L)=11W/m^2$, half-inhibition-rate light irradiance $(K_{L,I})=39W/m^2$, and half-maximum-rate concentration for inorganic carbon $(K_{S,Ci})=0.5mgC/L$, half-maximum-rate concentration for inorganic nitrogen $(K_{S,Ni})=1.4mgN/L$, and half-maximum-rate concentration for inorganic phosphorus $(K_{S,Pi})=0.06mgP/L$. Compared to other phototrophs having ${\mu}max$ estimates, PCC6803 is a fast-growing r-strategist relying on reaction rate. Its half-maximum-rate and half-inhibition rate values identify the ranges of light irradiance and nutrient concentrations that PCC6803 needs to achieve a high specific growth rate to be a sustainable bioenergy source. To gain the advantages of its high maximum specific growth rate, PCC6803 needs to have moderate light illumination ($7-62W/m^2$ for ${\mu}_{syn}{\geq}1/d$) and relatively high nutrient concentrations: $N_i{\geq}2.3 mgN/L$, $P_i{\geq}0.1mgP/L$, and $C_i{\geq}1.0mgC/L$.