• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.152-155
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• 2007

We have studied electronic structures and magnetic properties of $YMnO_3,\;ScManO_3$ with hexagonal structure using Full Potential Linearized Augmented Plane Wave (FLAPW) method based on LSDA method. LSDA calculation results show that multiferroic $YMnO_3$ shows energy gap due to hexagonal symmetry and magnetic interaction. Because of insulating gap and small Y ion, $YMnO_3$ shows magnetic and ferroelectric state. However, $ScMnO_3$ does not show the energy gap because of strong hybridization of Mn-O for LSDA calculation. We confirmed the stability of multiferroic state for $YMnO_3\;and\;ScManO_3$ using total energy calculations. The antiferromagnetic and ferroelectric states have the lowest energy about 100 meV.

• Applied Microscopy
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• v.46 no.4
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• pp.217-226
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• 2016

Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.256-261
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• 2019

In this study, mid-infrared transparent zinc sulfide (ZnS) ceramics were fabricated through hydrothermal synthesis with different molar ratios of S/Zn (S/Zn = 0.8, 1.0, 1.2, 1.4, and 1.6). The ZnS ceramics were sintered at a relatively low temperature of $850^{\circ}C$ to prevent the occurrence of the hexagonal phase featuring optical anisotropy. The phase composition, microstructure, and optical properties of the ZnS ceramics were subsequently investigated by employing X-ray diffraction, scanning electron microscopy, and Fouriertransform infrared spectroscopy. The results obtained indicate that the ZnS nanoparticles feature the cubic phase, without the hexagonal phase. Moreover, with increasing S, the crystallinity and particle size of the ZnS nanoparticles increased. The crystallinity and density of the ZnS ceramics improved when the molar ratio of S was higher than the molar ratio of Zn, thereby enhancing the transmittance. Furthermore, the ZnS ceramic with an S/Zn value of 1.2 was found to exhibit the highest transmittance of approximately 69% owing to the reduced occurrence of the hexagonal phase and a high density of 99.8%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.5
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• pp.96-102
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• 2021

Hexagonal bolt, nut, fittings, and high-pressure valves with special alloy play an important role in many industrial products. Numerical analysis was conducted to obtain data for designing a new drawing system. This study aims to predict the rolling force of the new drawing system compared to that of the established drawing system. The rolling force of the new drawing system was predicted using numerical analysis by assuming that it is in proportion to deformation. The rolling forces of Mo, Ti, and W were approximately 1.4, 0.5, and 2.5 times those of SUS. Because the values of ultimate strength of special alloys were more close to numerical analysis, the values of ultimate strength could be used to predict the rolling force of the new drawing system without numerical analysis in field.

• Steel and Composite Structures
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• v.45 no.5
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• pp.683-695
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• 2022

Conventional braces are often used to provide stiffness to structures; however due to buckling they cannot be used as seismic energy dissipating elements. In this study, a seismic energy dissipation device is proposed which is comprised of a bracing member and a steel hysteretic damper made of steel hexagonal plates. The hexagonal shaped designated fuse causes formation of plastic hinges under axial deformation of the brace. The main advantages of this damper compared to conventional metallic dampers and buckling-restrained braces are the stable and controlled energy dissipation capability with ease of manufacture. The mechanical behavior of the damper is formulated first and a design procedure is provided. Next, the theoretical formulation and the efficiency of the damper are verified using finite element (FE) analyses. An analytical model of the damper is established and its efficiency is further investigated by applying it to seismic retrofit of a case study structure. The seismic performance of the structure is evaluated before and after retrofit in terms of maximum interstory drift ratio, top story displacement, residual displacement, and energy dissipation of dampers. Overall, the median of maximum interstory drift ratios is reduced from 3.8% to 1.6% and the residual displacement decreased in the x-direction which corresponds to the predominant mode shape of the structure. The analysis results show that the developed damper can provide cost-effective seismic protection of structures.

• Journal of IKEEE
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• v.26 no.1
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• pp.129-132
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• 2022

In this paper, a technique for optimizing the sub-array system structure that can minimize the side lobe level of the phased-array antenna is proposed. Optimization of the proposed array antenna structure is to adjust the spacing between sub-arrays and sub-arrays by using a hexagonal array structure of one sub-array and a hexagonal sub-array for six hexagonal arrays, and thus the entire phased array antenna system of the radiation pattern was optimized. Compared to the 2-dimensional planar antenna system, the proposed technique maintains a gain of 24.3 dBi and a half-power beam-width of 8.46 degrees without change, and only reduces -3.4 dB and -6.5 dB in the x-axis and y-axis directions, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.62-63
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.123.2-123.2
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• 2007