• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.59.1-59.1
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• 2010

이종접합 구조의 태양전지는 에미터 및 후면전계층으로 비정질 실리콘이 이용되고 있다. 본연구에서는 HWCVD를 이용하여 중성층 비정질 실리콘을 증착(10nm), 패시베이션된 n형 결정질 실리콘을 기판으로 PECVD법으로 에미터 층은 p형 비정질 실리콘을 후면 전계층은 n+형 비정질 실리콘을 증착하여 a-Si:H(p)/c-Si(n)/a-Si:H(n+)의 구조로 에미터 및 후면전계층의 조건에 따른 이종접합 태양전지를 제작, 특성을 분석하였다. 증착시간에 따라 에미터와 후면전계층의 두께를 조절하고 도펀트 가스(B2H6,PH3)의 유량에 따라 도핑 농도를 조절하였다. 공정 변수마다 MCLT 및 Implied Voc를 측정하였고, 태양전지 제작 후 도핑 농도에 따른 충진율을 비교, 분석하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.129.1-129.1
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• 2011

a-Si:H/c-Si 구조의 이종접합 태양전지 전면 투명전도막으로 Indium tin oxide(ITO) 박막의 조건에 따라 태양전지 특성을 연구하였다. ITO 박막은 파우더 타겟으로 마그네트론 스퍼터링 방식으로 성막하였고, 증착 온도(Ts)에 따라 전기적, 광학적 특성을 비교, 분석하였다. 기판 증착 온도가 증가할수록 박막의 저항이 낮아지는 것으로 나타났으며 $350^{\circ}C$ 조건에서 가장 낮은 저항($34.2{\Omega}$/sq)을 보였다. 투과도 또한 기판 증착 온도가 올라갈수록 전반적인 향상을 나타냈다. a-Si:H/c-Si 기판의 MCLT(minority carrier lifetime)는 $350^{\circ}C$에서 최적($359{\mu}s$)의 결과를 나타냈다. 그 이상의 기판 온도에서는 오히려 감소하였는데, 이는 높은 온도에서의 a-Si:H/c-Si 계면의 열손상으로 판단된다.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.27-32
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• 2011

In this study, we have investigated the power conversion efficiency of organic solar cells utilizing conjugated polymer/fullerene bulk-hetero junction(BHJ) device structures. We have fabricated poly(3-hexylthiophene)(P3HT), poly[2methoxy-5-(3',7'-dimethyloctyl-oxy)-1-4-phenylenevinylene] as an electron donor, [6,6]-phenyl $C_{61}$ butyric acid methylester(PCBM-$C_{61}$)as an electron acceptor, and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) used as a hole injection layer(HIL), after fabricated active layer, between active layer and metal cathode(Al) deposited LiF interlayer(5 nm). The properties of fabricated organic solar cell(OSC) devices have been analyzed as a function of different thickness. The electrical characteristics of the fabricated devices were investigated by means J-V, fill factor(FF) and power conversion efficiency(PCE). We observed the highest PCEs of 0.628%(MDMO-PPV:PCBM-$C_{61}$) and 2.3%(P3HT:PCBM-$C_{61}$) with LiF inter-layer at the highest thick active layer, which is 1.3times better than the device without LiF inter-layer.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of the Korean Society of Radiology
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• v.3 no.3
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• pp.27-35
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• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.