• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.346-346
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• 2009

For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.104-108
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• 2012

Flexible organic thin film solar cell device with Bulk Hetero-Junction (BHJ) structure was fabricated with blended conjugated polymer of PCDTBT : $PC_{71}BM$ as active layer. Surface of ITO anode for the organic solar cell device was treated with ozone. The organic solar cell device with bare ITO showed short circuit current density ($J_{sc}$) of $8.2mA/cm^2$, open-circuit voltage ($V_{oc}$) of 0.73V, fill factor (FF) of 0.36, and power conversion efficiency (PCE) of 2.16%, respectively. The organic solar cell device with ozone treated ITO anode revealed distinctively improved performance parameters:$J_{sc}$ of $9.8mA/cm^2$, $V_{oc}$ of 0.82V, FF of 0.43, PCE(${\eta}$) of 3.42%.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.211-217
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• 2013

Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.160-160
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• 2016

In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.666-672
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• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.113-116
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• 2005

In this paper, silicon thin-film solar cells(Si- TFSC) and a-Si/c-Si heterojunction solar cells(HJ-cell) are investigated. The Si-TFSC was prepared on glass substrate by depositing $1-3{\mu}m$ thin-film silicons by glow discharge method. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells on textured ZnO:A1 TCO (transparent conducting oxide) showed improved Jsc in top and bottom cells than that on $SnO_2:F$ TCO. This enhancement of jsc resulted from improved light trapping effect by front textured ZnO:A1. The a-Si/c-Si HJ-cells with simple structure without high efficiency features are suffering from low Voc and Jsc. The improvement of front nip and back interface properties by adopting high quality silicon-films at low temperature should be done both for increasing device performances and production cost.