• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.04a
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• pp.453-458
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• 2011

Air preheater uses the waste heat of the gas which burnt from the boiler from the thermal power plant. Air preheater it is established in the exit of the boiler follows in change of temperature combustion gas and the vibration which it follows in thermal expansion and contraction occurs. Air preheater with ruse the gas the seal the place where it includes a gap in the structure which it does, the vibration which it follows in change of temperature fluctuates the displacement of gap, fluctuation of the leakage quantity which occurs from gap there is a possibility of decreasing an effect to system. Part system it will be able to control the interval of gap in order, control mechanism about under establishing the place where it does the gap control actively, measures a gap the displacement sensor for is necessary. Like this displacement sensor the condition must do continuous running from atmosphere of high temperature was demanded all. This paper investigates the implementation instance of hazard existing which implement the high temperature displacement sensor, it analyzes, produces the result which it examines a model, it was a presentation. These results with the fact that it will contribute in the research for the implementation and a localization of the high temperature displacement sensor and advanced air preheater.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.196-197
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• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• Journal of the Korean Society of Industry Convergence
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• v.16 no.3
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• pp.95-102
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• 2013

It is indispensable to modern society metal processing since the industrialized rapidly, but it is a metalworking cutting fluid immediately. In addition, this means selecting a emulsion on the basis of quality criteria processing method, the material of the material, cutting depth, cutting speed, Djourou fence Liang, and surface roughness, cutting oil, the shape of the device based on the emulsion, I will be the structure of the tank, filtration equipment also changes. In particular, acting bacteria is now breeding in response to the passage of time due to metal ion degradation due to heat generated hydraulic fluid leakage, humidity tung, during processing, seep from processing material at the time of processing the water-soluble cutting oil for generating the malodor by dropping significantly the performance of the cutting oil to corruption from, sometimes by introducing various additives to suppress spoilage in advance. In this study, we expect the effect of the cost reduction in the extension of fluid replacement cycle through the application of the management apparatus and deep understanding in the management of cutting fluid, the working environment through the understanding and interest of workers in the production site more than anything I try to become useful for the improvement.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.4
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• pp.152-160
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• 1999

A high speed motor has been generating a lot of attention due to its performance-more light, thin, short, compact than ordinary motors. But they have low efficiency with high frequency power source because of the iron losses which may produce too much heat as well as the copper losses occurred in the rotor windings. The Halbach array can generate the strong magnetic field systems without additional magnetic materials, therefore the iron losses can be removed. In this paper, the Halbach array is applied to the field system for the high speed motor, and three dimensional FEM is used to analyze the field of the Halbach array considering with the leakage flux. The measured values of flux density are also compared with the FEM analysis. And the magnetic characteristics of the Halbach array field system are compared with those of the conventional field systems such as slot-iron type, PM-iron type. Consequently, it is confirmed that the Halbach array field system is more suitable to the high speed motor because it has high flux density, sinusoidal flux distribution than others.

• The KSFM Journal of Fluid Machinery
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• v.19 no.4
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• pp.39-42
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• 2016

A PFA lined ball valve, which is machined with fluorinated resin PFA to its inner part for improving corrosion resistance, non-stickness, heat-resistance, has been widely used to the chemical/pharmaceutical industries, the semiconductor/LCD manufacturing processes, etc. with the high purity chemicals as working fluid. EPA stated that 60% of all fugitive emissions come from the valve stem packing in a typical petroleum or chemical processing plant. They monitor regulated components for leaks and maintain seal performance at acceptable levels. Korean industrial standards only deals with the bubble test for in-line leakage of valves, which has the detectable leak rate of $10^{-4}$ [$mbar{\cdot}L{\cdot}s^{-1}$], therefore, it is not sufficient to check fugitive emissions. In this study, we conducted Helium leak detection from a PFA lined ball valve and evaluated fugitive emissions according to ISO 15848-1, which has the detectable leak rate of $10^{-9}$ [$mbar{\cdot}L{\cdot}s^{-1}$], for manufacturing the high-reliable PFA lined ball valves against fugitive emissions.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.2
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• pp.65-72
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• 2001

This paper presents the design and test results of a 10kVA single phase HTS transformer which is operating at 77K. Double pancake windings with BSCCO -2223 HTS tape and GFRP cryostat with room temperature bore are used in the transformer. Four double pan cake windings were used in pancake windings are connected in parallel to conduct the secondary current of 45.4A. the rated voltages of each winding are 440/220V. Numerical calculation using Finite Element Method was used to evaluated the performance of each arrangement. Considering the magnetizing reactance, leakage reactance, electrical insulation and the circulating current in low voltage winding which had two windings in parallel, HLLH arrangement was finally chosen. Estimation of the AC loss, magnetizing loss and self field loss, in the design stage, where effects of perpendicular field and parallel field are considered. Room temperature bore type cryostat has been constructed and its heat loss was measured.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.5
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• pp.477-484
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• 2013

This paper proposes a novel switching method of active clamp snubber for efficiency improvement of PV module integrated converter(MIC) system. Recently, MIC solar system is researched about the efficiency and safety. PV MIC system is used active clamp method of snubber circuit for the price and reliability of the system. But active clamp snubber circuit has the disadvantage that system efficiency is decreased for switch operating time because of heat loss of resonant between snubber capacitor and leakage inductance. To solve this problem, this paper proposes a novel switching method of the active clamp. The proposed method is a technique to reduce power consumption by reducing the resonance of the snubber switch operation time and through simulations and experiments proved the validity.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.