• Journal of Power System Engineering
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• v.11 no.2
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• pp.72-76
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• 2007

Since the magnetic bearing system has unstability inherently it is necessary to measure the displacement for stable operation. Normally the displacement measurement is implemented by using sensors. The sensor for the displacement measurement is selected by precision, installation space, effect of magnetic field and response speed. And the cost of displacement measurement sensor also is considered. At the cost the hall effect sensor has a large advantage comparing with the others. Therefore this study concern about the basis experimental test for the displacement measurement of the magnetic bearing system that uses the hall effect sensor coupled with a tiny permanent magnet. The experimental results confirm the validity and practicability for this displacement measurement sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.12-12
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• 2010

The hall probe measurement system was used to measure the critical current distribution of superconducting coated conductor. The system consists of reel to reel moving apparatus, 7 array hall probe, a rotary encoder and permanent magnet. The magnetic field profile across the width of superconducting coated conductor using Bean's critical state model was calculated. The effect of various parameters of the formulas on the magnetic field distribution and the effect of shape and size of artificial defects, which were formed on the surface of SmBa2Cu3O7-d(SmBCO) coated conductor using laser marking system, on the hall probe magnetic field signal of the hall probe measurement system was investigated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.70-75
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• 2010

The objective of this paper is to propose a new velocity measurement method for an electro-mechanical fin actuator. The model of the electro-mechanical fin actuator includes uncertainties such as unknown disturbances and parameter variations in flight condition. So, an electro-mechanical fin actuator system needs robust control algorithm which requires not only position information but also velocity information. Usually, analog tachometers have been used for velocity feedback in an electro-mechanical fin actuator. However, using these types of sensors have problems such as the cost, space, and malfunction. These problems lead to propose a new velocity measurement method using linear type Hall-effect sensor. In order to verify the proposed method, several experiments are performed using Model Following Sliding Mode Controller(MFSMC). It is shown that the MFSMC with a new velocity measurement method using linear type Hall-effect sensor can satisfy the requirements without using of velocity sensor.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.2
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• pp.54-62
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• 1983

The electric characteristics of semiconductor materials can be found by way of various methods, of which the measurement of the carrier mobility is thought to be of great importance. There exist some mobilty measurements, but the measurement based on Hall effect is the most widely uesd. In this paper is adopted the mobility measurement of semiconductor by the use of cylindrical eavity operated in the same shape as TE modes. It is hoped that the resultant values of measurement, the structure of measurement circut, cavity design and the raising of relevant problems may give much help to those who may interested in this field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.6-9
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• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.7
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• pp.840-845
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• 2018

BLDC motor is widely used as a servo motor due to high efficiency, high power density, low inertia, and low maintenance. However, BLDC motor generally needs position and velocity sensors to control actuation system. Usually, analog tachometers and encoders have been used for velocity feedback sensors. However, using these types of sensors have problems such as the cost, space, and malfunction. So, This paper is to propose a new velocity measurement method using linear hall-effect and enhanced differentiator for BLDC motor. In order to verify the feasibility of the proposed method, several simulations and experiments are performed. It is shown that the proposed velocity measurement method can satisfy the requirements without using of velocity sensor.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.48-52
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• 2019

Recently, many studies have been reported on the magnetoresistance and Hall effect of REBCO thin films and bulk. The voltage interferes quench detection of high-temperature superconducting magnet and generates leakage current in no insulation high-temperature superconducting coil. Therefore, in this paper, experiments on magnetoresistance and Hall effect of commercial YBCO and GdBCO tapes have been carried out. As a result, anomalous voltages expected for the magnetoresistance and Hall effect of REBCO tapes were observed and analyzed. In addition, the voltage characteristics of REBCO have been identified, and the Hall coefficient are calculated for use in high magnetic field magnet applications.