• The korean journal of orthodontics
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• v.9 no.1
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• pp.23-35
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• 1979

The present study has the purpose of investigating various growth and developmental aspects of rabbit snout with the aid of metallic implantation and of improving on the indirect method of growth and developmental studies of its skull. Sixty-eight growing albino rabbits were used. A head holder, film holder, cephalometer, metallic implanting device and implant materials were designed and constructed by the author. Eight metallic pins were implanted with a metallic implanting device in the rabbit snout under general anesthesia. Two metallic pins were implanted on each side of the interfrontal suture and another two were put on each side of the internasal suture near the frontonasal suture. Serial cephalograms were taken with a two-week interval, using the head holder, film holder and cephalometer. Eight items of linear measurement were obtained from the film. On the base of the results of the study, the following conclusions are obtained: 1. The metallic implant method is better than the other indirect methods for growth and developmental studies of the rabbit skull. 2. Most of the vertical growth of the rabbit snout is due to sutural growth at the frontonasal suture and the horizontal growth is at the interfrontal and the internasal suture. 3. The vertical growth of the rabbit snout is greater than the horizontal growth. 4. The horizontal growth of the rabbit snout is greater at the nasal bone than at the frontal bone. 5. The amount of vertical growth of the rabbit snout is almost same at inner and outer side of the interfrontal and internasal suture line, 6. Growth rate of the sutural growth of the rabbit snout tends to decrease by the growth of the rabbit. 7. Implant materials do not disturb growth and development of the rabbit snout, except a slight trauma effect during the first week of metallic implantation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.2 s.233
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• pp.169-179
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• 2005

Nucleate boiling experiments on heating surface of constant wall temperature were performed using R113 for almost saturated pool boiling conditions. A microscale heater array and Wheatstone bridge circuits were used to maintain a constant wall temperature condition of heating surface and to measure the heat flow rate with high temporal and spatial resolutions. Bubble images during the bubble growth were taken as 5000 frames per second using a high-speed CCD camera synchronized with the heat flow rate measurements. The bubble growth behavior was analyzed using the new dimensionless parameters for each growth regions to permit comparisons with previous experimental results at the same scale. We found that the new dimensionless parameters can describe the whole growth region as initial and later (thermal) respectively. The comparisons showed good agreement in the initial and thermal growth regions. In the initial growth region including surface tension controlled, transition and inertia controlled regions as divided by Robinson and Judd, the bubble growth rate showed that the bubble radius was proportional to $t^{2/3}$ regardless of working fluids and heating conditions. And in the thermal growth region as also called asymptotic region, the bubble showed a growth rate that was proportional to $t^{1/5}$, also. Those growth rates were slower than the growth rates proposed in previous analytical analyses. The required heat flow rate for the volume change of the observed bubble was estimated to be larger than the heat flow rate measured at the wall. Heat, which is different from the instantaneous heat supplied through the heating wall, can be estimated as being transferred through the interface between bubble and liquid even with saturated pool condition. This phenomenon under a saturated pool condition needs to be analyzed and the data from this study can supply the good experimental data with the precise boundary condition (constant wall temperature).

• The Korea Journal of Herbology
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• v.24 no.1
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• pp.121-131
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• 2009

Objectives：This study was designed to investigate the effects of herbal composition and fermented Cervi Pantotrichum Cornu on the growth of longitudinal bone in the adolescent male rats. Methods： Longitudinal bone growth was measured by fluorescence microscopy. To examine the effects on the growth plate metabolism, the total height of growth plate and the induction of local insulin-like growth factor-1 (IGF-1) and bone morphogenetic protein-2 (BMP-2) were measured. Results： The herbal composition treatment enhanced longitudinal bone growth and total heght of growth plate and promoted the induction of local IGF-1 and BMP-2 of growth plate. Conclusions： This study showed that the herbal composition have the effect of bone growth in adolescent rats and might be used for the growth delayed adolescent and inherent growth failure patient.

• Journal of Korean Society for Quality Management
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• v.25 no.1
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• pp.44-55
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• 1997

In order to determine procedures for a, pp.opriate model selection of technological growth curves, numerous time series that were representative of growth behavior were collected according to data characteristics. Three different growth curve models were fitted onto data sets in an attempt to determine which growth curve models achieved the best forecasts for types of growth data. The analysis of the results gives rise to an a, pp.oach for selecting a, pp.opriate growth curve models for a given set of data, prior to fitting the models, based on the characteristics of the goodness of fit test.

• Korean Journal of Microbiology
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• v.16 no.4
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• pp.155-160
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• 1978

Nutritional requirements for the growth of Cellulomonas flavigena were studied. C. flavigena grew well on cellulose when 0.005% or more of yeast extract was present in the growth medium. The growth factor in yeast extrct was, in part, thiamine and biotin. Amino acids had little effect on the growth on the organism. The extent of growth on yeast extract was much higher than that obtained on those vitamins, which indicates the presence of growth factors in yeast extract besides the vitamins, among the carbohydrates tested, the organism grew best on glucose and galactose, and the optimum N/P ratio was within the range of 0.75~3.17.

• Communications for Statistical Applications and Methods
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• v.14 no.3
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• pp.497-506
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• 2007

Coverage-based NHPP SRGMs have been introduced in order to incorporate the coverage growth behavior into the NHPP SRGMs. The coverage growth function representing the coverage growth behavior during testing is thus an essential factor of the coverage-based NHPP SRGMs. This paper proposes a class of discrete time coverage growth functions and illustrates its application to real data sets.

• The Journal of Pediatrics of Korean Medicine
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• v.15 no.1
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• pp.195-202
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• 2001

1. Purpose : Clinically I have studied efficacy of herb treatment and development of herb growth palpation about handicapped children for growth. 2. Methods : 165 patients who visited hospital from January, 2000 to January 2001 3. Results : Average growth of children who visited hospital was less than 4cm but boys have grown 9.8cm/year and girls grown 7.8cm/year at average after treatment by herb. 4. Conclusion : In case of decreasing growth to have get less growth hormone, it has confirmed positive effectiveness by herb treatment even if it is normal.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.204-204
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• 2017

In recent years the growth rates of world agricultural production and crop yields have slowed because of rapid urbanization but the agriculture mechanization implies the use of various power sources and improved farm tools and equipment to enhance the efficiency of utilization of various crop input. Therefore the current study was conducted to investigate the growth characteristics of seedlings treated with plant growth regulators for the production of seeds suitable for mechanical formulations of soybeans and red beans. The seeds of Uram bean and Arary red bean were sown in 128 well plug tray as the testing varieties. Three growth inhibitors such as 0.05% hexaconazole, prohexadion-calcium, and 0.1% diniconazole were treated and fifteen representative plants were collected from each treatment at 2, 5, 7, 13, 16, 17, 19, and 20 days interval after treatment. The collected plants were examined for the growth atributes such as plant height, root length, leaf area and chlorophyll. The growth promoter was treated at the 13th day after treatment with growth inhibitor and treated with 0.1% concentration of Pomina ($GA_{4+7}$ 1.8% + 6-benzylaminopurine 1.8%) and Nonaji (gibberellic acid 2% + $GA_{4+7}$ 2%). Initially the growth data was recorded to examine the effect of growth inhibitor, while after treatment with growth promoters, the growth attributes were recorded at 4th and 7th day. As a result of measuring the growth parameter of soybean, the inhibitory effect was shown in the aerobic treatment at the ground level at the 7th day after treatment. At the 4th day of growth promoting agents treatment, the stimulation effect of non - treated plants was greater than that of formalin treatments. As a result of measuring the growth attributes of red bean, In the latter part of the growth, at the 4th day after the growth promoter treatment. This study was able to confirm the effective growth regulators and treatment periods for each crop, and it was possible to control the growth of seedlings. Based on these results, it can be expected that the basis of seedling production technology of crops which is necessary for sowing and transplantation mechanization of agriculturle field can be established.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.