• Carbon letters
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• 제14권4호
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• pp.228-233
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• 2013

In this work, we report in-situ observations of changes in catalyst morphology, and of growth termination of individual carbon nanotubes (CNTs), by complete loss of the catalyst particle attached to it. The observations strongly support the growth-termination mechanism of CNT forests or carpets by dynamic morphological evolution of catalyst particles induced by Ostwald ripening, and sub-surface diffusion. We show that in the tip-growth mode, as well as in the base-growth mode, the growth termination of CNT by dissolution of catalyst particles is plausible. This may allow the growth termination mechanism by evolution of catalyst morphology to be applicable to not only CNT forest growth, but also to other growth methods (for example, floating-catalyst chemical vapor deposition), which do not use any supporting layer or substrate beneath a catalyst layer.

• East Asian Economic Review
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• 제26권2호
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• pp.95-117
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• 2022

This paper empirically examines what factors affected the termination of anti-dumping measures in Korea during the 2006-2019 period. Employing a meticulous literature review, the paper investigates the WTO's and Korea's rules on the termination of anti-dumping measures and sets up the related variables in the Cox proportional hazards model. The empirical results show that the GDP growth rate, employment, and trade competitiveness in domestic industries had positive effects on the hazard of the termination of AD measures, while free trade agreements had negative effects. By industry, the hazard of the termination of AD measures was less prominent in the steel industry, while it was more prominent in the machinery industry. These results imply that AD measures in Korea had the properties of a proper trade remedy policy and, at the same time, a protectionism tool to sustain its domestic industries, depending on industrial characteristics and other trade policies.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2005년도 제36차 추계학술대회 및 제4회 HVEM 이용자 워크샵
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• pp.189-193
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• 2005

• Journal of Photoscience
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• 제9권2호
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• pp.158-161
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• 2002

UV-B radiation gives harmful effects on plants, such as production of several types of DNA lesions, and growth inhibition. On the other hand, plants have some protective mechanisms, including filtering effect due to accumulation of phenolic compounds in epidermal cells and reactivation of DNA lesions, which are enhanced by UV-B irradiation. We have investigated the mechanism of UV-B effects on plants using cucumber seedlings as plant materials. Cucumber plants were cultivated in an artificially lit growth chamber. Supplemental UV-B irradiation, of which intensity was almost equal to the level of natural sunlight, retarded the growth of first leaves. The growth retardation must result trom the inhibition of cell division and/or cell growth. Microscopical observation of leaf epidermis suggested that the growth retardation might be mainly caused by cell growth inhibition. The retardation was, however, restored within 2 or 3 days after the termination of UV-B irradiation. It is known that UV-B irradiation lowers the activity of photo system II (PS II). In the present experimental conditions, however, UV-B irradiation has little effect on PS II activity as estimated by chlorophyll fluorescence. The stomatal conductance, a major factor determining photosynthetic rate, of first leaves increased during the growth. The increase of stomatal conductance was suppressed by UV-B irradiation and restored by termination of the irradiation. It has not been clear, however, what mechanisms are involved in the suppression of increase of stomatal conductance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.409-412
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• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

• 해양환경안전학회지
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• 제12권2호
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• pp.81-87
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• 2006

본 연구는 남해안 북만 해역을 대상으로 조류성장잠재력(AGP) 시험을 통하여 H. akashiwo의 성장제한요인을 평가하였다. 영양물질의 첨가 및 미생물과의 동시배양에 의하면 적조발생 단계별 H. akashiwo의 성장은 서로 다른 제한요인에 의하여 영향을 받는 것으로 나타났다. 적조발생 전의 H. akashiwo 성장은 질산질소 $50{\mu}M$과 연산인 $5{\mu}M$을 복합첨가하면 크게 증가하였지만 인산인을 단독 첨가하거나 미생물과 동시 배양하여도 전혀 영향이 없었다. 적조발생 전의 H. akashiwo 성장제한요인은 질산질소로 나타났다. 적조발생시기의 H. akashiwo 성장은 질산질소 $50{\mu}M$ 또는 인산인 $5{\mu}M$을 단독첨가하면 증가하였지만 미량영양물질이나 $vitamin\;B_{12}$을 첨가해도 전혀 영향이 없었다. 적조발생 시기의 H. akashiwo 성장제한요인은 질산질소와 인산인이 동시에 작용하는 것으로 나타났다. 반면에 적조소멸시기의 H. akashiwo 성장은 질산질소와 인산인을 첨가하면 약간 증가하였지만 미생물과 동시 배양하면 현저히 감소하였다. 그러므로 적조 소멸시기의 H. akashiwo 성장제한은 미생물요인에 의한 것으로 평가되었다.

• 한국표면공학회지
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• 제29권5호
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.418-418
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• 2009

Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

• 시스템엔지니어링학술지
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• 제16권2호
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• pp.87-96
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• 2020

In this paper we proposed the test design method of reliability growth management. First, we presented the process for establishing the reliability growth management test design considering the number of failures and the termination test time. Reliability growth analysis of continuous system was performed in accordance with the test design process presented. In case the reliability test result is not met with the reliability target value after more than three failures occurred, the required test times were analyzed that 1,725 hrs for one corrective action, 1,950 hrs for two corrective actions. If the number of failures is less than three, design a reliability demonstration test according to confidence level 80% and 90% was performed using RGA 11 Software. As a result, it is possible to establish the reliability growth management test design with sufficient use of available resources. The results of this study can be used when establishing a test design for assessment of reliability growth management of all continuous systems.

• 한국환경과학회지
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• 제33권1호
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• pp.97-102
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• 2024

We introduce a method for preserving yellow mealworm (Tenebrio molitor Linnaeus) larvae for an extended period and show that a high percentage of larvae can survive in good health under low-temperature storage conditions combined with specific diapause termination conditions. Our study revealed that we can regulate important development stages such as pupation, emergence, and larval duration by adjusting these termination conditions. When storing larvae aged 6-8 weeks for 140 days, the storage temperature can be varied based on our goals, giving us control over yellow mealworm production to meet specific demands. To produce adult beetles, storing larvae at 15 ℃ with wheat bran and ending diapause at 30 ℃ resulted in 90% pupation rate, with 60% becoming adults in 21 days. If our aim is larvae production, storing them at 10-12 ℃ with wheat bran and ending diapause at 25-30 ℃ allows the larvae to reach a suitable weight for processing. This straightforward approach ensures long-term storage of yellow mealworm larvae and provides a practical way to control their development, allowing efficient mass production tailored to market demands.