• Applied Microscopy
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• v.46 no.1
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• pp.20-26
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• 2016

Our work on $Sc_2O_3-W$ matrix dispenser cathodes had been reviewed in this paper. The cathode with uniform distribution of $Sc_2O_3$ had been obtained using liquid-liquid doping method. The cathode had excellent emission property, i.e., the emission current density in pulse condition could reach over $35A/cm^2$. It was found that the cathode surface was covered by a Ba-Sc-O active substance multilayer with a thickness of about 100 nm, which was different from the monolayer and semiconducting layer in thickness. Furthermore, the observation results displayed that nanoparticles appeared at the growth steps and the surface of tungsten grains of the fully activated cathode. The calculation result indicated that the nanoparticles could cause the increase of local electric field strengths. We proposed the emission model that both the Ba-Sc-O multilayer and the nanoparticles distributing mainly on the growth steps of the W grains contributed to the emission. The future work on this cathode has been discussed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.494-496
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• 1996

The purpose of this study is to investigate the effect of process conditions on pore distribution in porous silicon layer prepared by electrochemical reaction. Porous silicon layers formed on p-type silicon wafer show the network structure of fine porse whose diameters are less than 100${\AA}$. In n-type porous silicon, selective growth was found on the pore surface by wet etching process after PR patterning. And numerical method showed high current density on the pore tip. With this result we confirmed that pore formation has two steps. First step is the initial attack on the surface and second step is the directional growth on the pore tip.

• Transactions of the Korean Society of Automotive Engineers
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• v.7 no.5
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• pp.40-54
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• 1999

The flame structure and soot formation in the counterflow Ethylene-Air nonpremixed flame are numerically analyzed. The present soot reaction mechanism involves nucleation, surface growth, particle coagulation, and oxidation steps. The gas phase chemistry and the soot nucleation, surface growth reactions are coupled by assuming that the nucleation and soot mass growth has the certain relationship with the concentration of benzene and acetylene. In terms of the centerline velocity and the soot volume fraction, the predicted results are compared with the experimental data. The detailed discussion has been made for the sensitivity of model constants and the deficiencies of the present model. Numerical results indicated that the acetylene addition to the soot surface plays the dominant role in the soot mass growth for the counterflow nonpremixed flame.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.350-355
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• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.174-175
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• 2005

Initial growth stage was investigated for SiC homoepitaxial film growth using 'step controlled epitaxy' technique. When the off angel direction is located parallel along to the gas flow direction, the smoother surface can be obtained. On the on axis substrates, selective etching was detected both the etching and growth condition. It was deduced that the high ratio of C/Si in the source gas results in well developed steps and etched spiral around micropipes.

• The Journal of Economics, Marketing and Management
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• v.5 no.1
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• pp.27-37
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• 2017

Domestic government debt securities is one of the steps which is taken by the government of Indonesia as a major source of financial budget, covering for the budget deficit, debt payments and interest debt. The purposes of this research are to know the development of budget deficits, government debt and impact of domestic government debt securities against economic growth in Indonesia. Method of analysis used Ordinary Least Squares (OLS) analyzing the impact of the domestic debt against economic growth in Indonesia. This research uses time series data from 1997 to 2014. Total government debt and domestic government debt securities in Indonesia increased during the last five years. The average of domestic government securities was above 50 percent of the total government debt. Estimated results showed domestic government debt securities has a positive and significant effect to economic growth. Official development assistance (ODA) has a negative effect to economic growth. Other variables such as the gross fixed capital formation and receipt of remittance have positive and significant effect, total imports and government expenditure have negative and significant effect against economic growth.

• Journal of Microbiology and Biotechnology
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• v.12 no.2
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• pp.327-330
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• 2002

A plant growth-promoting substance, FM001, was isolated from the culture broth of Acremonium strictum MJN1. The purification steps included solvent extraction, adsorption chromatography using Diaion HP20, TLC on silica, and HLPC using a C-18 column. The purified FM001 enhanced rice seedling growth by $11.1\%\;and\;34.0\%$ of the dried weight of the shoots and roots, and also radish growth by $26.5\%\;and\;23.7\%$ of the top length and dried weight. FM001 also significantly promoted the growth of red pepper by increasing $32.7\%$ of fruit weight and $11.3\%$ as regards the height. FM001 consisted of C, H, O, N, and S, and its molecular weight was determined to be 537.78 Da. The structure of FM001 resembled brassinosteriods, and it would appear to have great potential as an effective bio-fertilizer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Proceedings of the Korea Contents Association Conference
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• 2003.11a
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• pp.436-439
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• 2003

Urbanization is worldwide phenomenon and unexceptional in Korea. It is necessary in the spatial decision making steps to predict urban forms for the efficient land use. This study aims to develop urban growth model based on allometry which deals with relationships between urban populations and urban area. For the input data and accuracy assessments, various GIS techniques are used. Although this research is an exemplary urban growth model dealing with physical data only, it can be a good start to develop a more practical model having socio-economic sides for planning practices.