• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.923-932
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• 1998

Al2O3/Al composites were produced by displacement reaction method which was carried out by imm-ersing the sintered silica preform which was prepared form fused silica powder in molten aluminu. an ac-tivation energy of 94kJ/mole was calculated from Al-SiO2 reaction data in 1000-130$0^{\circ}C$ temperature range With increase of reaction temperature the alumina particle in the Al2O3/Al composites produced with pur metal Al showed grain growth and the growth of alumina particle in Al2O3/Al composite produced by using of Mg contained Al alloy was inhibited. The flexural strength of Al2O3/Al composites produced at 100$0^{\circ}C$ showed the highest value as 393 MPa. Flexural strength of the composite fabricated at 85$0^{\circ}C$ showed higher deviation than that of the composite produced at above 100$0^{\circ}C$ Low flexural strength of the composite fa-bricated at 120$0^{\circ}C$ due to the growth of pore and alumina particle size. The hardness of composites de-pended on alumina content in Al2O3/Al composite decreased with increasing of aluminium content in case the same alumina content and increased with increasing of silicon content in composite.

• Nuclear Engineering and Technology
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• v.50 no.1
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• pp.145-150
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• 2018

A new methodology, the crack-spallation model, has been developed to analyze gas-solid reactions dominated by crack growth inside of the solid reactant and spallation phenomena. The new model physically represents three processes of the reaction progress: (1) diffusion of gas reactant through pores; (2) growth of product particle in pores; and (3) crack and spallation of solid reactant. The validation of this method has been conducted by comparison of results obtained in an experiment for oxidation of $UO_2$ and the shrinking core model. The reaction progress evaluated by the crack-spallation model shows better agreement with the experimental data than that evaluated by the shrinking core model. To understand the trigger point during the reaction progress, a detailed analysis has been conducted. A parametric study also has been performed to determine mass diffusivities of the gas reactant and volume increase constants of the product particles. This method can be appropriately applied to the gas-solid reaction based on the crack and spallation phenomena such as the voloxidation process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.209-214
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• 2016

Foam reaction injection molding (FRIM) is a widely used process for manufacturing polyurethane foam with complex shapes. Numerical model for polyurethane foam forming reaction during FRIM process has been intensively investigated by a number of researchers to precisely predict final shapes of polyurethane foams. In this study, we have identified a problem related with a previous theoretical model for polyurethane foam forming reaction. Thus, previous theoretical model was modified based on experimental and computational results.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Korean Journal of Food Science and Technology
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• v.29 no.2
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• pp.309-313
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• 1997

Maillard reaction products (MRPs) added into a culture and the resultant bacterial growth were investigated using response surface methodology. The coefficients of determination $(R^{2})$ of response surface regression equations for bacteria were 0.9544 and 0.9578 in Bacillus subtilis and Bacillus natto, respectively. The MRPs produced at higher reaction temperature and for longer reaction time showed greater antimicrobial effect for Bacillus subtilis. Especially, the MRPs produced at temperature above $150^{\circ}C$ for 8 to 12 hrs showed the strongest antimicrobial effect. The MRPs produced at lower reaction temperature and for shorter reaction time showed greater microbial growth effect for Bacillus natto, but those produced at the reaction temperature higher than $160^{\circ}C$ showed the greatest antimicrobial effect. In the ridge analysis, the growth of Bacillus subtilis was the most significantly inhibited in the presence of MRPs prepared at $159.10^{\circ}C$ and pH 12.21 for 9.67 hrs, and the growth of Bacillus natto was the most significantly inhibited in the presence of MRPs prepared at $169.94^{\circ}C$ and pH 9.66 for 9.22 hrs.

• Journal of Magnetics
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• v.19 no.4
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Korean Chemical Engineering Research
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• v.59 no.1
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• pp.138-151
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• 2021

The effect of a reactant ratio on the growth of a buoyancy-driven instability in an irreversible A+B→C reaction system is analyzed theoretically and numerically. Taking a non-stoichiometric reactant ratio into account, new linear stability equations are derived without the quasi-steady state assumption (QSSA) and solved analytically. It is found that the main parameters to explain the present system are the Damköhler number, the dimensionless density difference of chemical species and the ratio of reactants. The present initial grow rate analysis without QSSA shows that the system is initially unconditionally stable regardless of the parameter values; however, the previous initial growth rate analysis based on the QSSA predicted the system is unstable if the system is physically unstable. For time evolving cases, the present growth rates obtained from the spectral analysis and pseudo-spectral method support each other, but quite differently from that obtained under the conventional QSSA. Adopting the result of the linear stability analysis as an initial condition, fully nonlinear direct numerical simulations are conducted. Both the linear analysis and the nonlinear simulation show that the reactant ratio plays an important role in the onset and the growth of the instability motion.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.914-917
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• 2002

Fabrication of micro carbon structures and patterns using laser-assisted chemical vapor deposition is studied. Argon ion laser and ethylene were used to grow micro carbon rod through pyrolytic decomposition of the reaction gas. The influence of reaction gas pressure and incident laser power on the diameter and growth rate of the micro carbon rod was experimentally investigated. The diameter of micro carbon rods increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below 1W. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 28 ${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated.