• Title/Summary/Keyword: grain growth mechanism

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The Grain Growth Mechanism of Sm123 Superconductor in Melt-Textured Growth Method (용융-응고법으로 제조된 Sm123 초전도체의 결정성장 기구)

  • 한상철;성태현;한영희;이준성;김상준
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2001.02a
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    • pp.9-12
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    • 2001
  • The microstructure evolution and the peritectic solidification of Sm$Ba_{2}$$Cu_{3}$ $O_{7-\delta}$ superconducting materials during the isothermal annealing were studied over the temperature range 1030-$1060^{\circ}C$ The faceted growth of the peritectic phase and its dependence upon Sm-diffusion in the liquid phase are discussed. A growth model is proposed to explain the growth shape of Sm123 crystals.

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Micromechanical Superplastic Model for the Analysis of Inhomogeneous Deformation in Heterogeneous Microstructure (비균일 조직에 따른 불균일 변형 해석을 위한 미시역학적 초소성 모텔)

  • Kim, Tae-Won
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.12
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    • pp.1933-1943
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    • 2001
  • A micromechanical model is presented for superplasticity in which heterogeneous microstructures are coupled with deformation behavior. The effects of initial distributions of grain size, and their evolutions on the mechanical properties can be predicted by the model. Alternative stress rate models such as Jaumann rate and rotation incremental rate have been employed to analyze uniaxial loading and simple shear problems and the appropriate modeling was studied on the basis of hypoelasticity and elasto-viscoplasticity. The model has been implemented into finite element software so that full process simulation can be carried out. Tests have been conducted on Ti-6Al-4V alloy and the microstructural features such as grain size, distributions of grain size, and volume fraction of each phase were examined for the materials that were tested at different strain rates. The experimentally observed stress-strain behavior on a range of initial grain size distributions has been shown to be correctly predicted. In addition, the effect of volume fraction of the phases and concurrent grain growth were analyzed. The dependence of failure strain on strain rate has been explained in terms of the change in mechanism of grain growth that occurs with changing strain rate.

The behaviour of the internal bubbles in $CaF_{2}$ crystals during the annealing process ($CaF_{2}$ 결정의 annealing시 내부 bubbles의 거동)

  • Shim, Kwang-Bo;Park, Dai-Chul;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.4
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    • pp.595-599
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    • 1996
  • The behaviour of the internal bubbles present in $CaF_{2}$ crystals was characterized crystallographically using a variety of the mircroscopical technique. The bubble defects were found to be aligned on the characteristic planes and directions depending on the crystals structure of the $CaF_{2}$. The AFM analysis revealed that these behaviors are related to the S-surface formation by the negative grain growth mechanism.

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An In-Situ Optical Study on Silicon Crystallization Process Using an Excimer Laser (Excimer Laser응용 실리콘 결정화 공정에 대한 In-Situ 광학적 연구)

  • Kim, W.J.;Y, C.-Hwan;Park, S.H.;Kim, H.J.
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1407-1411
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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Abnormal Grain Growth Mechanism of Calcium Hexaluminate Phase

  • Song, Jun-Ho;Jo, Young-Jin;Bang, Hee-Gon;Park, Sang-Yeup
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.525-526
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    • 2006
  • Calcium-hexaluminate phase $(CA_6)$ is known to be effective for the crack shielding due to the spinel block crystal structure. In this study, we focused to the control of $CA_6$ morphology for good damage tolerance behavior in alumina and zirconia/calcium-hexaluminate $(CA_6)$ composites. Calcium-hexaluminate $(CA_6)$ composites were prepared from zirconia, alumina and calcium carbornate powders. Calcium-hexaluminate $(CA_6)$ phase was obtained by the solid reaction through the formation of intermediate phase $(CA_2)$. $CA_6$ phase showed the column type abnormal grain grown behavior composed of small blocks. Due to the typical microstructure of $CA_6$, alumina and zirconia/calcium-hexaluminate composites provide a well controlled crack propagation behavior.

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Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering (마그네트론 스퍼터링에 의하여 다양한 기판 위에 증착된 CrN 박막의 핵생성과 성장거동)

  • 정민재;남경훈;한전건
    • Journal of the Korean institute of surface engineering
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    • v.35 no.1
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    • pp.33-38
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    • 2002
  • For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

Influence of Silicon and Seed Particles on the Reconstruction Characteristics and Exaggerated Grain Growth of MgO Protective Layer by Over-Frequency Accelerated Discharge in ACPDPs

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Choi, Jong-Kwon;Park, Kyu-Ho;Han, Sung-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.957-960
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    • 2008
  • The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

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Low Temperature Nanopowder Processing for Flexible CIGS Solar Cells (플렉시블 CIGS 태양전지 제조를 위한 저온 나노입자공정)

  • Park, Chinho;Farva, Umme;Krishnan, Rangarajan;Park, Jun Young;Anderson, Timothy J.
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.61.1-61.1
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    • 2010
  • $CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

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Lattice based Microstructure Evolution Model for Monte Carlo Finite Element Analysis of Polycrystalline Materials (격자식 미세구조 성장 모델을 이용한 다결정 박막 소재의 유한 요소 해석)

  • 최재환;김한성;이준기;나경환
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.248-252
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    • 2004
  • The mechanical properties of polycrystalline thin-films, critical for Micro-Electro-Mechanical Systems (MEMS) components, are known to have the size effect and the scatter in the length scale of microns by the numbers of intensive investigation by experiments and simulations. So, the consideration of the microstructure is essential to cover these length scale effects. The lattice based stochastic model for the microstructure evolution is used to simulate the actual microstructure, and the fast and reliable algorithm is described in this paper. The kinetics parameters, which are the key parameters for the microstructure evolution based on the nucleation and growth mechanism, are extracted from the given micrograph of a polycrystalline material by an inverse method. And the method is verified by the comparison of the quantitative measures, the number of grains and the grain size distribution, for the actual and simulated microstructures. Finite element mesh is then generated on this lattice based microstructure by the developed code. And the statistical finite element analysis is accomplished for selected microstructure.