• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• Journal of the Korean Society for Nondestructive Testing
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• v.10 no.1
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• pp.18-23
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• 1990

In materials with the large grain size, ultrasonic waves are highly attenuated by the grain boundary acting as scattering centers due to discontinuity of elastic constant. In this study, the improved probes were developed so that they minimized the effect of grain scattering in order to detect deep flaws in coarse grained materials. As the result, the developed ultrasonic transducers showed the better sensitivity and signal to noise ratio when compared with the commercial probes in testing the interior of coarse grained material.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.924-929
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• 2011

It is well known that grain boundary cavitation is the main failure mechanism in austenitic stainless steel under tensile hold creep-fatigue interaction conditions. The cavities are nucleated at the grain boundary during cyclic loading and grow to become grain boundary cracks. The attenuation of ultrasound depends on scattering and absorption in polycrystalline materials. Scattering occurs when a propagation wave encounters microstructural discontinuities, such as internal voids or cavities. Since the density of the creep-fatigue cavities increases with the fatigue cycles, the attenuation of ultrasound will also be increased with the fatigue cycles and this attenuation can be detected nondestructively. In this study, it is found that individual grain boundary cavities are formed and grow up to about 100 cycles and then, these cavities coalesce to become cracks. The measured ultrasonic attenuation increased with the cycles up to cycle 100, where it reached a maximum value and then decreased with further cycles. These experimental measurements strongly indicate that the open pores of cavities contribute to the attenuation of ultrasonic waves. However, when the cavities develop, at the grain boundary cracks whose crack surfaces are in contact with each other, there is no longer any open space and the ultrasonic wave may propagate across the cracks. Therefore, the attenuation of ultrasonic waves will be decreased. This phenomenon of maximum attenuation is very important to judge the stage of grain boundary crack development, which is the indication of the dangerous stage of the structures.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.2
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• pp.157-165
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• 1999

Grain size of steels is one of the most important parameters which influence yield strength and fracture toughness. Ultrasonic wave propagating in polycrystalline materials is mostly attenuated by scattering at grain boundary. Effect of ultrasonic attenuation on average ferrite grain size of carbon steels with tensile strength $40{\sim}60kgf/mm^2$ consisting of multi phases such as ferrite + pearlite and ferrite + pearlite + bainite was evaluated. The attenuation of these steels rapidly increased with average ferrite grain diameter. Average ferrite grain diameter ($D_{av}$, ${\mu}m$) could be expressed as $1.79+22.97*a^{1/2.03}$, where a is attenuation with unit of nepers/cm. From this study, it was confirmed that nondestructive ultrasonic method could be used in measuring average ferrite grain size indirectly.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.638-642
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• 2014

In this study, we investigate on the crystal microstructure and magneto-resistance (MR) change of Bismuth(Bi) thin films for annealing process, in order to apply Bi thin films to the spin electronic devices. As-prepared Bi thin films show the randomly oriented find grains whose size was measured to about 100 nm and the very low MR (4.7 % at room temperature) while careful annealing results in not only grain growth up to ${\sim}2{\mu}m$ but also drastic MR improvement (404 % at room temperature). The drastic change in the MR after applying the annealing process is attributed to the grain growth decreasing grain boundary scattering of electron. Therefore, in this study, we confirm the annealing effect for the grain boundary formation and MR improvement of Bi thin films, and demonstrate the feasibility of spin electronic devices.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.649-656
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• 2011

The present study evaluated the microstructures and mechanical properties of severely deformed Ni-30Cr alloys. Cross-roll rolling (CRR) process was introduced as a severe plastic deformation (SPD), and Ni-30Cr alloy sheets were cold rolled to 90% thickness reduction and subsequently annealed at $700^{\circ}C$ for 30 min to obtain the recrystallized microstructure. Electron back-scattering diffraction (EBSD) was introduced to analyze grain boundary character distributions (GBCDs). The application of CRR to the Ni-30Cr alloy was effective in enhancing the grain refinement through heat treatment; consequently, the average grain size was significantly refined from $33{\mu}m$ in the initial material to $0.6{\mu}m$. This grain refinement directly improved the mechanical properties, in which yield and tensile strengths significantly increased relative to those of the initial material. We systematically discuss the grain refinement and accompanying improvement of the mechanical properties, in terms of the effective strain imposed by CRR relative to conventional rolling (CR).

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.560-565
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• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.