• The Korean Journal of Ceramics
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• 제6권3호
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제34회 춘계학술대회논문집
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• pp.210-213
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• 2010

최근의 실험 결과를 통해 하이브리드 로켓 연료의 표면에 연소가 진행되지 않은 채 남아있는 고립된 부분들이 존재함을 확인하였다. 이러한 불규칙적인 spot은 연료의 기화로 인한 분출유동(wall blowing)과 산화제의 유동 사이에서 발생하는 경계층 교란에 의한 현상인 것으로 여겨진다. 본 연구에서는 23,000의 높은 Reynolds수와 벽면분출 현상을 효과적으로 처리할 수 있도록 LES 기법을 이용하여, 연료 표면 근처의 난류 유동 특성을 해석하였다. 원형 단면을 갖는 하이브리드 로켓 모터의 그레인 형상을 사실적으로 모사하기 위하여 곡률효과를 포함한 3차원 실린더 형태의 지오메트리를 고려하였다. 연료 표면에서 발생하는 불규칙한 spot의 발생은 경계층과 분출되는 유동이 상호 간섭함으로써 난류구조들의 기구학적 특성을 변경시키기 때문인 것으로 추측되는 결과들을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• Corrosion Science and Technology
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• 제20권3호
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• pp.158-168
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• 2021

Austenitic 316 stainless steel was irradiated with protons accelerated by an energy of 2 MeV at 360 ℃, the various defects induced by this proton irradiation were characterized with microscopic equipment. In our observations irradiation defects such as dislocations and micro-voids were clearly revealed. The typical irradiation defects observed differed according to depth, indicating the evolution of irradiation defects follows the characteristics of radiation damage profiles that depend on depth. Surface oxidation tests were conducted under the simulated primary water conditions of a pressurized water reactor (PWR) to understand the role irradiation defects play in surface oxidation behavior and also to investigate the resultant irradiation assisted stress corrosion cracking (IASCC) susceptibility that occurs after exposure to PWR primary water. We found that Cr and Fe became depleted while Ni was enriched at the grain boundary beneath the surface oxidation layer both in the non-irradiated and proton-irradiated specimens. However, the degree of Cr/Fe depletion and Ni enrichment was much higher in the proton-irradiated sample than in the non-irradiated one owing to radiation-induced segregation and the irradiation defects. The microstructural and microchemical changes induced by proton irradiation all appear to significantly increase the susceptibility of austenitic 316 stainless steel to IASCC.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.215-218
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• 1994

$(Sr_{l-x}{\cdot}Ca_x)_mTiO_3+0.006Nb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.996$N_2$)에서 소결시킨 후 CuO를 시편의 양면에 도포하여 $1100^{\circ}C$에서 2시간동안 열처리함으로써 제작하였다. 결정립의 크기는 Ca의 치환량이 증가함에 따라 촉진되었으나, 20[mol%] 이상 치환시 더 이상 고용되지 못하고 입성장을 억제시켰다. Ca의 치환량이 $10{\sim}15[mol%]$, m=1인 시편에 있어서 우수한 유전특성을 나타내었다. 즉, 비유전율, 유전손실($tan{\delta}[%]$)과 온도변화에 따른 정전용량의 변화율이 각각 >25,000, <0.3[%], <${\pm}10[%]$을 나타내었다. 본 연구에 사용된 모든 시편은 온도의 함수로서 주파수 증가에 따라 유전완화 현상을 나타내었으며, 분산주파수는 $10^6[Hz]$ 이상이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• 한국토양비료학회지
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• 제37권5호
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• pp.293-303
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• 2004

우리나라 점토집적층 토양의 분류체계를 보완하고 점토집적의 미세형태를 구명하기 위하여 52개 점토집적층의 모재별로 20개 토양통을 대상으로 토양 층위별로 시료를 채취하여 토양의 이화학적 특성, 토양 중점토의 광물조성과 화학성분을 분석하였다. 미세형태에 관한 분석은 토양 원상시료를 채취하여 박편을 제작한 후 편광현미경을 이용하였으며 그 결과는 다음과 같다. 점토집적층의 점토함량은 28% 이상으로 표토의 점토함량에 비하여 평균 1.33배 높았으며, 토양의 pH는 점토집적층에서 높았으나 CEC는 유기물의 감소로 점토함량이 증가함에도 불구하고 표토보다 작았다. 모든 공시토양의 점토집적층에서 피막의 점토집적현상을 관찰할 수 있었으나 3기층 유래 반곡통 토양집적층의 점토함량의 증가에도 불구하고 점토집적현상을 관찰할 수 없었다. 점토광물 종류별 이동성 정도를 보면 팽창형 2:1 광물, 비팽창형 2:1광물, 1.1형광물의 순이었다. 점토집적층에서는 점토이외에 비정질의 철 또는 망간, 불투명 광물 및 유기물이 토양공극 표면피막, 토양공극 충진, 광물입자 외부피막 형성하고 있었다. 잔적토나 붕적토에서는 점토집적층과 토양기질 사이에 경계의 발달이 뚜렷한 반면에 충적토의 점토집적층에서는 점토함량이 높은 토양기질이 오랜 기간 외부로부터 물리적인 작용을 받아 절단된 배열면이 형성되었다.

• 한국지반신소재학회논문집
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• 제18권4호
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• pp.299-306
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• 2019

본 연구에서는 층 다짐으로 조성된 지반을 모사한 모형실험에서 지반 공동 발생 시 지반의 이완영역 범위를 추정하기 위해 제작된 이완영역탐지기를 통해 이완영역을 측정하고자 하였다. 세립분과 조립질 토사를 조성한 층상구조로 구성된 지반에 대해 콘 직경의 크기에 따라 영향을 받는 것을 확인하였으며, 이에 따른 적절한 콘을 선정하기 위해 크기효과 실험을 수행한 결과 적절한 초소형콘을 설정할 수 있었다. 또한, 본 연구에서 적용된 LAD를 이용하는 경우 실내모형실험 지반의 다짐정도에 따른 경계면 및 상대밀도 차에 의한 관입저항치의 급격한 변화에 따라 지반의 이완상태를 파악할 수 있었다. 지반내 관입저항특성을 통해 공동주변부에서 발생하는 이완영역의 범위를 추정하였으며, 이완영역에서 관입저항력의 감소율을 통해 파괴 발생 영역을 확인하였다.

• Nuclear Engineering and Technology
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• 제47권5호
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• pp.608-616
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• 2015

The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.