• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.3
• /
• pp.120-125
• /
• 2002

The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.75-78
• /
• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1800-1802
• /
• 2000

본 연구에서는 냉음극 발광 소자인 FEA를 이용하여 Cold Cathode Lamp 제작과 그 구조에 대해서 연구하였다. Anode plate에는 ZnO:Zn 형광체를 전기영동법으로 증착한 후 tube slabs와 anode plate를 frit glass를 이용하여 접합하였다. FEA와 substrate의 bonding, addressing을 위한 wire bonding, substrate와 집속전극, setter를 stem base의 외부전극에 연결하기 위한 spot welding, tube와 stem base를 glass melting method로 접합 공정을 하였다. 진공배기 시스템에 배기판을 연결하여 ${\sim}10^{-7}$torr까지 배기한 후 heater를 이용하여 배기관을 tip-off하였다. 최종적으로 진공을 유지하기 위해 getter를 RF 고주파로 활성화하였다. 결론적으로 lamp외 특성을 비교분석한 후 휘도 및 발광효율을 향상시키기 위한 구조절 개선과 방안을 고찰하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.234-239
• /
• 2004

본 연구에서는 마이크로파용 유전재료로서 널리 사용되고 있는 BNT($BaO-Nd_{2}O_{3}-TiO_{2}$)계 세라믹스를 기본조성으로 하고, 저융점의 phoshpate계 유리 프릿의 첨가를 통해 LTCC(Low Temperature Cofired Ceramic)에 적용 가능한 유전율을 가진 조성을 개발 하고자, $70P_{2}O_{5}-5B_{2}O_{3}-(25-x)BaO-xNa_{2}O$ 유리를 제조 및 특성을 평가하였다. 또한, BNT계 세라믹스에 glass frit을 5 - 15 wt% 범위에서 첨가하고, $800 - 950^{\circ}C$의 온도범위에서 소결하여 제조된 유리-세라믹 복합체의 소결특성 및 유전특성을 조사하였다.

• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.92-93
• /
• 2007

X7R 고압용 적층 칩 캐패시터 제작을 위한 내환원성 유전체 조성물에서 희토류인 $Er_2O_3$을 0.6 mol% 첨가한 후 유리프릿 첨가시소결특성 및 절연저항이 향상됨을 확인 할 수 있었다. 회토류인 $Er_2O_3$을 첨가시 유전율 및 절연저항이 감소하는 경향을 보이나 $85^{\circ}C$ 영역에서 온도특성을 향상시키는 것을 확인하였으며 고압 적층 칩 캐패시터 제작시 온도 특성이 우수한 재료를 개발 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.284-285
• /
• 2007

본 논문에서는 저소음 및 저 신호 왜곡 특성을 가지는 내환원성 유전체 원료를 개발하기 위하여 $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$에 $CaTiO_3$, $SrTO_3$, $BaTiO_3$를 첨가하여 이에 따른 유전 특성을 조사하였다. 첨가량의 조절 및 glass frit 첨가를 통하여 환원성 분위기에서도 유전율 80 ~ 100, 절연저항 (R*C) 500[ohm-F] 이상의 유전특성을 얻었다. 본 연구결과로 얻어진 유전재료를 적용하면 무소음 및 저 신호 왜곡 특성을 가지면서도 고 신뢰성의 MLCC를 제작할 수 있을 것으로 예상된다.

• Journal of the Korean Ceramic Society
• /
• v.41 no.12 s.271
• /
• pp.915-920
• /
• 2004

The main phase of $BaTi_{4}O_9$-based ceramics was transformed to $BaTi_{5}O_{11}$ caused by the sintering with borosilicate glass, which was analyzed by using XRD and TEM. We considered that the phase change from $BaTi_{4}O_9$-based ceramics to the Ti-rich $BaTi_{5}O_{11}$ phase resulted from borosilicate glass selective absorbing of Ba ions from the $BaTi_{4}O_9$. In these results, we found a dependence on the amounts of the glass frits and the annealing temperature, and the phase change is also dependent of the main phases of $Ba_{4}Ti_{13}O_{30},\;and\;Ba_{2}Ti_{9}O_{20}$, which are involved in the $BaO-TiO_2-based$ Ti-rich region. In the case of sintering of middle- and high- permittivity material with additional glass frits for middle- and high- dielectric coefficients LTCC composition, control of weight fraction of the glass frits accompanying low-temperature sintering property with appropriate phase change is required.

• Korean Journal of Materials Research
• /
• v.26 no.1
• /
• pp.22-28
• /
• 2016

In this study, we fabricated high quality color conversion component with green/red phosphor and low melting glass frit. The color conversion component was prepared by placing the green and red phosphor layer on slide glass via screen printing process. The properties of color conversion component could be controlled by changing coating sequence, layer thickness and heat treatment temperature. We discovered that optical properties of color conversion component were generally determined by the lowest layer. On the other hand, the heat treatment temperature also affected to correlated color temperature (CCT) and color rending index (CRI). The color conversion component with a green (lower) - red (upper) layer which was sintered at $550^{\circ}C$ showed the best optical properties: CCT, CRI and luminance efficacy were 3340 K, 78, and 56.5 lm/w, respectively.

• Korean Journal of Materials Research
• /
• v.22 no.8
• /
• pp.390-396
• /
• 2012

Ag pastes added to Bi-oxide frits have been applied to the electrode material of Si solar cells. It has been reported that frits induce contacts between the Ag electrodes and the Si wafer after firing. During firing, the control of interfaces among Ag, the glass layer, and Si is one of the key factors for improving cell performance. Specifically, the thermo-physical properties of frits considerably influence Ag-Si contact. Therefore, the thermal properties of frits should be carefully controlled to enhance the efficiency of cells. In this study, the interface structures among Ag electrodes, glass layers, and recrystallites on an $n^+$ emitter were carefully analyzed with the thermal properties of lead-free frits. First, a cross-section of the area between the Ag electrodes and the Si wafer was studied in order to understand the interface structures in light of the thermal properties of the frits. The depth and area of the pits formed in the Si wafer were quantitatively calculated with the thermal properties of frits. The area of the glass layers between the Ag electrodes and Si, and the distribution of recrystallites on the $n^+$ emitter, were measured from a macroscopic point of view with the characteristics of the frits. Our studies suggest that the thermophysical properties should be controlled for the optimal performance of Si solar cells; our studies also show why cell performance deteriorated due to the high viscosity of frits in Ag pastes.

• Journal of Sensor Science and Technology
• /
• v.10 no.5
• /
• pp.292-303
• /
• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.