• Journal of Sericultural and Entomological Science
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• v.30 no.1
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• pp.20-24
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• 1988

Adult specific proteins, referred to as ASP-I(adult specific protein of slow mobility) and ASP-II(adult specific protein of slow mobility) at the pharate adult stage of the silkworm, Bombyx mori, were detected by polyacrylamide gel electrophoresis. The adult specific proteins (ASP-I and ASP-II) were defined as a kind of adult hemolymph proteins without sex specificity, and the was no variation in the respective electrophoretic mobility of ASP-I and of ASP-II among the forty-one silkworm varieties. tested.

• The Korean Journal of Zoology
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• v.16 no.1
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• pp.67-77
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• 1973

The alcohol dehydrogenase (ADH) isozyme of the four strains of Drosophila melanogaster in Korea was studied by the starch gel electrophoresis and the results are given below: 1. The numbers of bands, staining intensity and mobility are considerably variable in the three strains, Chunchun, Jinju and Sinchon-Seoul, but relatively uniform in the Taijun strain. 2. It is suggested that the Taijun strain may be homogeneous and the other three strains, on the contrary, heterogeneous for the ADH constitution. 3. The electrophoretic patterns are observed to be different between males and females in all strains used which is hard to intereret. 4. The starch gel electrophoresis is to have a resolving power superior to cellulose acetate electrophoresis.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1342_1342
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• 2009

Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 - $4\;cm^2/V{\cdot}s$ with on/off current ratios >$10^7$, and threshold voltage of 2 V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1002-1004
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• 2009

Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.91-95
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• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• Journal of the Korean Magnetic Resonance Society
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• v.1 no.1
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• pp.31-44
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• 1997

The effect of the binding of CRP to the symmetrically synthetic 22, 28, and 30 bp lac promoter was investigated by 1H NMR. The binding of cAMP*CRP to the 22 bp DNA did not bring about any changes in the chemical shift values, but did cause selective line broadening of imino proton resonances of specific base pairs. However, The binding of cAMP*CRP to the 28 and 30 bp DNA brought about large changes on the imino proton resonances that seems to be induced by DNA bending. We studied also the role of cAMP as an activator of DNA/CRP complex formation by gel mobility shift assay. Gel mobility shift assay revealed that the cAMP*CRP complex was not able to bind to the 22 bp DNA fragment, but was able to bind to the 28 bp DNA fragment of lac promoter region.

• Journal of Ginseng Research
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• v.23 no.1 s.53
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• pp.55-59
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• 1999

For the first time we have developed a simple method for conjugation between ginsenoside Rf (Rf) and bovine serum albumin (BSA) or ovalbumin (OVA) by a periodate oxidation method. The Rf-BSA conjugate is confirmed by ultraviolate (UV) scanning, thin layer chromatography (TLC), and SDS-gel electrophoresis. In UV scanning Rf showed three small peaks approximately at 230, 265 and 280 nm. BSA showed a peak at 280 nm. The Rf-BSA conjugate showed right shifted three peaks that BSA alone did not show. In TLC analysis, the Rf-BSA conjugate did not show mobility in silica gel but showed a slight stream of trace. In SDS-gel electrophoresis, Rf-BSA conjugate show a slight less mobility than BSA alone. Rf-OVA conjugate also showed similar patterns with Rf-BSA conjugate. These results demonstrated that periodate oxidation method could be used to produce a stable Rf-BSA or Rf-OV A conjugate and also could be applied for other ginsenoside(s).

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.