Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
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- Pages.1342_1342
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- 2009
Sol-gel processed oxide semiconductor thin-film transistors for active-matrix displays
Sol-gel 공정으로 제작된 산화물 반도체 박막 트랜지스터
- Kim, Yong-Hoon (Korea Electronics Technology Institute) ;
- Park, Sung-Kyu (Korea Electronics Technology Institute) ;
- Oh, Min-Seok (Korea Electronics Technology Institute) ;
- Han, Jeong-In (Korea Electronics Technology Institute)
- Published : 2009.07.14
Abstract
Zinc tin oxide (ZTO) based thin-film transistors (TFTs) were fabricated on glass substrate by using sol-gel method. The fabricated ZTO TFT had bottom gate and top contact structure with ZTO layer formed by spin coating from ZTO solution. The fabricated TFT showed field-effect mobility of about 2 -
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