• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.52.1-52.1
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.821-825
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• 2015

Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.484-485
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• 2003

We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1733-1736
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• 2008

ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.396-399
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• 2009

Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.401-402
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• 2005

The important parts of material science in the film preparation fields and sol-gel technology are presented. For the present work, a series of amorphous films was prepared in air by sol-gel method without using some alkoxide stabilizer, which reduces the reactivity of the metal alkoxides. The choice of precursors can affect the chemical-reaction kinetics, microstructures and properties of the product. In this report author compared the crystallization behavior of oxide functional films derived from the same precursors, stressing the influence of experiment conditions and where it was possible to obtain the uniform amorphous or crystalline dielectric films. A short analysis of sol-gel technology and thin film methods about development of dielectric materials has been given.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.56-63
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• 2023

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N₂) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.94-98
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• 2014

$LiCoO_2$ thin film has received diverse attention as cathodes material of thin-film micro-batteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and an annealing process. Their structures were studied using X-ray diffraction and Raman Spectroscopy. The particle morphologies of these thin films were observed by Scaning electron microscope. From the results of X-ray diffractometry and Raman Spectroscopy analyses, it was found that as-grown films had the structure of spinel (LT-$LiCoO_2$) and layered-Rock-salt (HT-$LiCoO_2$) at $550^{\circ}C$ and $750^{\circ}C$ respectively. The annealed films at $650^{\circ}C$ were presumed to be the mixed state of these two types. Throlugh the scanning electron microscope, It was estimated that the particle size in as-grown films at $750^{\circ}C$, were larger crystilline particle than in those at the other lower temperature and well distributed in the film.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2387-2392
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• 2009

A composite film of multi-walled carbon nanotube (MWCNT)/sol-gel-derived zinc oxide(ZnO)/Nafion has been utilized as an efficient immobilization matrix for the construction of a highly sensitive and stable tris(2,2'-bipyridyl) ruthenium(II) (Ru(${bpy)_3}^{2+})$ electrogenerated chemiluminescence (ECL) sensor. The electrochemical and ECL behaviors of Ru(${bpy)_3}^{2+})$ ion-exchanged into the composite film were strongly dependent upon the sol-gel preparation condition, the amount of MWCNT incorporated into the ZnO/Nafion composite film, and the buffer solution pH. The synergistic effect of MWCNTs and ZnO in the composite films increased not only the sensitivity but also the long-term stability of the ECL sensor. The present ECL sensor based on the MWCNT/ZnO/Nafion gave a linear response ($R^2$ = 0.999) for tripropylamine concentration from 500 nM to 1.0 mM with a remarkable detection limit (S/N = 3) of 15 nM. The present ECL sensor showed outstanding long-term stability (94% initial signal retained for 5 weeks). Since the present ECL sensor exhibits large response towards NADH, it could be applied as a transduction platform for the ECL biosensor in which the NADH is produced from the dehydrogenase-based enzymatic reaction in the presence of NA$D^+$ cofactor.